VS-16CTQ060-M3

VS-16CTQ060-M3, VS-16CTQ080-M3, VS-16CTQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 8 A FEATURES Base 2 common cathode • 175 °C TJ operation • Low forward voltage drop • High frequency operation 1 2 Anode 3 3L TO-220AB Anode 2 1 Common 3 cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 60 V, 80 V, 100 V VF at IF 0.58 V IRM max. 7 mA at 125 °C TJ max. 175 °C EAS 7.5 mJ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Package 3L TO-220AB Circuit configuration Common cathode This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 16 A 60 to 100 V Rectangular waveform VRRM IFSM tp = 5 μs sine 850 A VF 8 Apk, TJ = 125 °C (per leg) 0.58 V TJ Range -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-16CTQ060-M3 VS-16CTQ080-M3 VS-16CTQ100-M3 UNITS 60 80 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current, see fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 148 °C, rectangular waveform VALUES UNITS 8 per leg per device A 16 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 850 Maximum peak one cycle non-repetitive  surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A 10 ms sine or 6 ms rect. pulse A 275 Revision: 20-Nov-17 Document Number: 96272 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ060-M3, VS-16CTQ080-M3, VS-16CTQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop per leg  See fig. 1 VFM (1) TJ = 25 °C 16 A 8A TJ = 125 °C 16 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 °C VR = rated VR TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.72 0.88 V 0.58 0.69 0.55 mA 7.0 0.415 V Forward slope resistance rt 11.07 m Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/µs VALUES UNITS -55 to 175 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case per leg RthJC Maximum thermal resistance junction to case per package RthJC Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS 3.25 DC operation Mounting surface, smooth and greased Approximate weight Mounting torque °C/W 1.63 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf ·in) 16CTQ060 Marking device Case style 3L TO-220AB 16CTQ080 16CTQ100 Revision: 20-Nov-17 Document Number: 96272 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ060-M3, VS-16CTQ080-M3, VS-16CTQ100-M3 Vishay Semiconductors 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C TJ = 25 °C 0.001 0.0001 0 0.5 1.0 1.5 0 2.5 2.0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 20 0 60 40 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 20-Nov-17 Document Number: 96272 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ060-M3, VS-16CTQ080-M3, VS-16CTQ100-M3 www.vishay.com Vishay Semiconductors 7 170 DC 160 150 Square wave (D = 0.50) 80 % rated VR applied 140 130 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 6 Average Power Loss (W) Allowable Case Temperature (°C) 180 5 4 RMS limit 3 DC 2 1 See note (1) 100 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. Rg = 25 Ω Current monitor High-speed switch IRFP460 Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR applied (1) Revision: 20-Nov-17 Document Number: 96272 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ060-M3, VS-16CTQ080-M3, VS-16CTQ100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 C T Q 100 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (16 = 16 A) 3 - Circuit configuration C = common cathode 4 - Package T = TO-220 5 - Schottky “Q” series 6 - Voltage rating 7 - Environmental digit 060 = 60 V 080 = 80 V 100 = 100 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16CTQ060-M3 50 1000 Antistatic plastic tube VS-16CTQ080-M3 50 1000 Antistatic plastic tube VS-16CTQ100-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?95279 Revision: 20-Nov-17 Document Number: 96272 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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