VS-16CTU04-M3

VS-16CTU04-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt® FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 2 Common cathode 2 3 Anode 3L TO-220AB • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 3 DESCRIPTION / APPLICATIONS FRED Pt® series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 400 V VF at IF 0.94 V trr typ. See Recovery table TJ max. 175 °C Package 3L TO-220AB Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per leg Average rectified forward current IF(AV) total device Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures VALUES UNITS 400 V 8 TC = 155 °C, rated VR 16 IFSM TC = 25 °C 100 IFRM TC = 155 °C, rated VR, square wave, 20 kHz TJ, TStg A 16 -65 to +175 °C ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 8 A MIN. TYP. MAX. 400 - - - 1.19 1.3 1.0 IF = 8 A, TJ = 150 °C - 0.94 VR = VR rated - 0.2 10 TJ = 150 °C, VR = VR rated - 20 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 400 V - 14 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 21-Sep-2018 Document Number: 96197 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current MIN. TYP. MAX. - 35 60 TJ = 25 °C - 43 - TJ = 125 °C - 67 - IF = 8 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V TJ = 125 °C Qrr - 2.8 - - 6.3 - UNITS ns A TJ = 25 °C - 60 - TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS -65 - 175 °C nC THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDITIONS TJ, TStg per leg per device RthJC - 3.6 4 - 1.8 2 Thermal resistance,  junction to ambient RthJA Typical socket mount - - 50 Thermal resistance,  case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf in) Weight Mounting torque Marking device Case style 3L TO-220AB 16CTU04 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 °C/W 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 0.1 0 0.5 1 1.5 2 2.5 100 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 100 200 300 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Sep-2018 Document Number: 96197 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 100 0 200 300 400 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 14 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) Rated VR applied 150 140 See note (1) 130 12 10 RMS limit 8 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 6 4 2 0 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 21-Sep-2018 Document Number: 96197 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04-M3 www.vishay.com Vishay Semiconductors 90 500 Qrr (nC) trr (ns) 70 60 50 350 IF = 16 A IF = 8 A 300 250 200 150 40 30 400 VR = 200 V TJ = 125 °C TJ = 25 °C 450 If = 16 A If = 8 A 80 VR = 200 V TJ = 125 °C TJ = 25 °C 100 50 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 21-Sep-2018 Document Number: 96197 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 C T U 04 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (16 = 16 A) 3 - Circuit configuration: C = common cathode 4 - 4 Package: T = 3L TO-220AB 4 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16CTU04-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?96565 Revision: 21-Sep-2018 Document Number: 96197 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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