VS-16FL60S05

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Standard JEDEC® types • Stud cathode and stud anode versions • Fully characterized reverse recovery conditions • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS • DC power supplies PRIMARY CHARACTERISTICS • Inverters IF(AV) 6 A, 12 A, 16 A Package DO-4 (DO-203AA) Circuit configuration Single • Converters • Choppers • Ultrasonic systems • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) 6FL 12FL 16FL 6 12 16 A 100 100 100 °C 9.5 19 25 A 50 Hz 110 145 180 60 Hz 115 150 190 TC IF(RMS) IFSM I2t 50 Hz 60 103 160 55 94 150 1452 1452 2290 I2s Range 50 to 1000 50 to 1000 50 to 1000 V See Recovery Characteristics table See Recovery Characteristics table See Recovery Characteristics table ns -65 to +150 -65 to +150 -65 to +150 °C trr TJ A 60 Hz I2t VRRM UNITS Range A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-6FL.., VS-12FL.., VS-16FL.. VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 5 50 75 10 100 150 20 200 275 40 400 500 60 600 725 80 800 950 100 1000 1250 IRRM MAXIMUM AT TJ = 25 °C μA IRRM MAXIMUM AT TJ = 100 °C mA IRRM MAXIMUM AT TJ = 150 °C mA 50 - 6.0 Revision: 11-Jan-18 Document Number: 93138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature IF(AV) TEST CONDITIONS 180° conduction, half sine wave DC IF(RMS) Maximum RMS current t = 10 ms Maximum peak, one-cycle  non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t I2t for fusing t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Maximum forward voltage drop VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = 150 °C 100 % VRRM reapplied 6FL.. 12FL.. 16FL.. UNITS 6 12 (1) 16 A 100 100 100 °C 9.5 19 25 215 130 170 135 180 225 110 145 180 115 150 (1) 190 86 145 230 78 130 210 60 103 160 55 94 150 856 1452 2290 TJ = 25 °C; IF = Rated IF(AV) (DC) 1.4 1.4 (1) 1.4 TC = 100 °C; IFM =  x rated IF(AV) 1.5 1.5 (1) 1.5 t = 0.1 ms to 10 ms, no voltage reapplied A A2s A2s V Note (1) JEDEC® registered values RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Maximum reverse recovery time Maximum peak recovery current Maximum reverse recovery charge trr IRM(REC) 6FL.., 12FL.., 16FL.. S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, IF = 1 A to VR = 30 V, 110 dIF/dt = 100 A/μs 285 490 100 250 430 90 225 390 TJ = 25 °C,  dIF/dt = 25 A/μs, IFM =  x rated IF(AV) 200 500 1000 200 500 IFM =  x rated IF(AV) - - - - - UNITS ns 1000 200 - - 500 1000 - - IFM trr t dir dt - Qrr IRM(REC) Qrr TJ = 25 °C,  IF = 1 A to VR = 30 V, 230 1700 5000 dIF/dt = 100 A/μs 200 1300 3800 150 1100 3000 TJ = 25 °C,  dIF/dt = 25 A/μs, IFM =  x rated IF(AV) 200 1200 5000 200 1200 5000 200 1200 5000 nC Note (1) JEDEC® registered values THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range SYMBOL TEST CONDITIONS 12FL.. 16FL.. UNITS TJ -65 to +150 TStg -65 to +175 Maximum thermal resistance, junction to case RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat, and greased 2.5 2.0 1.5 + 0 - 10 % (13) Lubricated threads 1.2 + 0 - 10 % (10) Approximate weight JEDEC® °C 1.6 °C/W 0.5 Not lubricated threads Allowable mounting torque Case style 6FL.. N·m (lbf · in) 7 g 0.25 oz. DO-4 (DO-203AA) Revision: 11-Jan-18 Document Number: 93138 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors RthJC CONDUCTION 6FL.. CONDUCTION ANGLE 12FL.. 16FL.. SINUSOIDAL CONDUCTION 6FL.. 12FL.. 16FL.. RECTANGULAR CONDUCTION 180° 0.58 0.46 0.37 0.33 0.26 0.21 120° 0.60 0.48 0.39 0.58 0.46 0.37 60° 1.28 1.02 0.82 1.28 1.02 0.82 30° 2.20 1.76 1.41 2.20 1.76 1.41 TEST CONDITIONS UNITS TJ = 150 °C K/W 160 160 150 150 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 140 DC 130 120 110 100 180 °C 90 180 °C 120 °C 60 °C 80 140 DC 130 180 °C 120 110 100 180 °C 120 °C 60 °C 90 80 70 70 60 60 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 20 25 30 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature, 6FL Series Fig. 3 - Average Forward Current vs. Maximum Allowable Case Temperature, 16FL Series 160 IF Maximum Allowable Case Temperature (°C) 150 dIF dt 140 130 IFM I DC 120 trr t 110 %IRM(REC) 100 180 °C 90 180 °C 120 °C 60 °C 80 IRM(REC) 70 60 0 2 4 6 8 10 12 14 16 18 20 Average Forward Current (A) Fig. 2 - Average Forward Current vs. Maximum Allowable Case Temperature, 12FL Series Qrr IF, IFM - Peak forward current prior to commutation -dIF/dt - Rate of fall of forward current IRM(REC) - Peak reverse recovery current trr - Reverse recovery time Qrr - Reverse recovered charge Fig. 4 - Reverse Recovery Time Test Waveform Revision: 11-Jan-18 Document Number: 93138 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com 6 ΔR - K/W Ø = 180° 120° 60° 30° 7 Conduction angle - Ø 8 ΔR 180° 0.58 30 - Δ R 120° 0.60 60° 1.28 30° 2.20 thS -Δ R 15 A =1 0- -Δ R 20 - 5 8 R 12 6 -Δ 7-Δ -Δ R R R ΔR R -Δ 6FL... TJ = 150 °C 9 5 Maximum Average Forward Power Loss (W) 10 Vishay Semiconductors K/ W RMS limit 4 3 2 No heatsi nk Ø Conduction angle 1 0 0 1 2 3 4 5 6 10 20 Average Forward Current (A) 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 6FL Series 8 12 - ΔR 15 ΔR 20 ΔR DC 0 180° 0.33 30 - ΔR 120° 0.58 60° 1.28 30° 2.20 thS A =8 10 Ø = 180° 120° 60° 30° DC 6 RMS limit 4 2 Ø -Δ 4ΔR R ΔR - K/W 10 5 Conduction angle - Ø 12 6- R ΔR -Δ RK /W -Δ R R -Δ 6FL... TJ = 150 °C 3 Maximum Average Forward Power Loss (W) 14 No heatsink Conduction angle 0 0 1 3 2 4 5 6 7 8 9 10 10 20 Average Forward Current (A) 30 40 50 60 70 90 100 80 Maximum Allowable Ambient Temperature (°C) 6- Ø = 180° 120° 60° 30° 14 12 10 ΔR 10 - ΔR RMS limit 8 2 3 thS A ΔR 8- 12 - R ΔR =4 -Δ R -Δ R K/ W -Δ R 4 Ø Conduction angle 2 180° 0.46 120° 0.48 60° 1.02 30° 1.76 ΔR 15 - Δ R 20 - ΔR 6 ΔR - K/W 16 5- R -Δ 12FL... TJ = 150 °C 18 1 Maximum Average Forward Power Loss (W) 20 Conduction angle - Ø Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 6FL Series 30 - ΔR No heatsink 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Average Forward Current (A) 10 20 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 12FL Series Revision: 11-Jan-18 Document Number: 93138 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com thS A 25 3- Ø = 180° 120° 60° 30° 20 15 5- DC 10 5 ΔR 4- ΔR 8-Δ R 10 - Δ R 15 - ΔR 20 - ΔR RMS limit =2 1. 0 -Δ R 0. -Δ R 5 K/ W -Δ R ΔR 6-Δ R ΔR - K/W R 12FL... TJ = 150 °C Conduction angle - Ø Maximum Average Forward Power Loss (W) 30 Vishay Semiconductors DC 0 180° 0.26 120° 0.46 60° 1.02 30° 1.76 Ø Conduction angle No heatsink 0 0 2 4 6 8 10 12 14 16 18 20 10 20 Average Forward Current (A) 30 40 50 60 70 90 100 80 Maximum Allowable Ambient Temperature (°C) 4- =3 ΔR 6ΔR 10 RMS limit 10 A ΔR 5- Ø = 180° 120° 60° 30° 15 thS 1. -Δ 5 -Δ R R -Δ R K/ W 8-Δ R ΔR 15 - Δ R 5 20 - ΔR Ø Conduction angle ΔR - K/W 20 2 R R -Δ 16FL... TJ = 150 °C 1 Maximum Average Forward Power Loss (W) 25 Conduction angle - Ø Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 12FL Series 180° 0.37 120° 0.39 60° 0.82 30° 1.41 0 0 2 4 6 8 10 12 14 10 16 20 Average Forward Current (A) 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) 1.5 16FL... TJ = 150 °C 30 R Ø = 180° 120° 60° 30° 25 20 thS A =3 4- RMS limit 15 2- 5-Δ R 8-Δ R DC -Δ R 1. 0 ΔR 0. 5 -Δ R -Δ R -Δ RK 5 6-Δ R 15 - ΔR Ø DC 0 180° 0.21 120° 0.37 60° 0.82 30° 1.41 /W ΔR 10 - Δ R 10 ΔR - K/W Maximum Average Forward Power Loss (W) 35 Conduction angle - Ø Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series Conduction angle 0 0 5 10 15 20 Average Forward Current (A) 25 10 20 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series Revision: 11-Jan-18 Document Number: 93138 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors Instantaneous Forward Current (A) 103 103 Maximum Average Forward Power Loss (W) 102 10 TJ = 150 °C TJ = 25 °C Ø = 180° 120° 60° 30° 102 Ø Ø = DC 180° 120° 60° 30° Ø 10 TJ = 150 °C 1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 102 10 103 Instantaneous Forward Voltage (V) Average Forward Current (A) Fig. 11 - Maximum Forward Voltage vs. Forward Current, 6FL Series Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 12FL Series Maximum Average Forward Power Loss (W) 6FL... Ø = 180° 120° 60° 30° 102 Ø Ø = DC 180° 120° 60° 30° Ø 10 TJ = 150 °C 1 1 102 10 103 Instantaneous Forward Current (A) 103 16FL.. 102 TJ = 150 °C 10 TJ = 25 °C 1 103 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 12 - Maximum High Level Forward Power Loss vs. Average Forward Current, 6FL Series Fig. 15 - Maximum Forward Voltage vs. Forward Current, 16FL Series 103 103 16FL... 12FL.. Maximum Average Forward Power Loss (W) Instantaneous Forward Current (A) 12FL... 6FL... 102 10 TJ = 150 °C TJ = 25 °C Ø = 180° 120° 60° 30° 102 Ø = DC 180° 120° 60° 30° Ø 10 Ø TJ = 150 °C 1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 2 10 103 Instantaneous Forward Voltage (V) Average Forward Current (A) Fig. 13 - Maximum Forward Voltage vs. Forward Current, 12FL Series Fig. 16 - Maximum High Level Forward Power Loss vs. Average Forward Current, 16FL Series Revision: 11-Jan-18 Document Number: 93138 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com 105 TJ = 150 °C 600 500 400 300 200 TJ = 25 °C 6FL... 100 12FL... 60 50 40 30 16FL... IF = 1 A 6FL...S02 12FL...S02 16FL...S02 20 6FL...S05 12FL...S05 16FL...S05 IF = π x rated IF(AV) Recovered Charge (nC) Reverse Recovery Time (ns) Vishay Semiconductors 104 TJ = 150 °C IF = π x rated IF(AV) 103 16FL... 12FL... 6FL... 102 IF = 1 A TJ = 25 °C 10 10 1 3 10 30 1 100 3 10 30 100 Rate of Fall of Forward Current (A/µs) Rate of Fall of Forward Current (A/µs) Fig.17a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series...S02 Fig. 18b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series...S05 6FL...S02 12FL...S02 16FL...S02 103 TJ = 150 °C IF = π x rated IF(AV) 102 16FL... 12FL... 6FL... IF = 1 A 10 TJ = 25 °C Reverse Recovery Time (ns) Recovered Charge (nC) 104 1 IF = π x rated IF(AV) 2000 1000 TJ = 25 °C 600 500 400 300 6FL... 12FL... 16FL... 6FL...S10 12FL...S10 16FL...S10 200 IF = 1 A 100 1 3 10 30 100 1 3 10 30 100 Rate of Fall of Forward Current (A/µs) Rate of Fall of Forward Current (A/µs) Fig. 17b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series...S02 Fig. 19a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series...S10 105 6FL...S05 12FL...S05 16FL...S05 3000 TJ = 150 °C TJ = 150 °C 2000 Recovered Charge (nC) Reverse Recovery Time (ns) TJ = 150 °C 6000 5000 4000 3000 IF = π x rated IF(AV) 1000 600 500 400 300 TJ = 25 °C 6FL... 200 12FL... 16FL... IF = π x rated IF(AV) 104 103 12FL... 6FL... 1 3 10 30 100 IF = 1 A TJ = 25 °C 102 6FL...S10 12FL...S10 16FL...S10 IF = 1 A 100 16FL... 10 1 3 10 30 100 Rate of Fall of Forward Current (A/µs) Rate of Fall of Forward Current (A/µs) Fig. 18a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series...S05 Fig. 19b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series...S10 Revision: 11-Jan-18 Document Number: 93138 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors 200 140 At any rated load condition and with rated VRRM applied following surge. 100 80 60 60 Hz 40 50 Hz At any rated load condition and with rated VRRM applied following surge. Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 120 150 60 Hz 100 50 Hz 50 20 0 0 1 2 4 6 8 10 20 1 40 60 2 4 6 8 10 20 40 60 Number of Equal Amplitude Half Cycle Current Pulses (N) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 20 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 6FL Series Fig. 22 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 16FL Series Peak Half Sine Wave Forward Current (A) 150 100 60 Hz 50 Hz 50 0 1 2 4 6 8 10 20 40 60 Transient Thermal Impedance Junction to Case (°C/W) 10 At any rated load condition and with rated VRRM applied following surge. 6FL... 16FL... 1 12FL... 10-1 10-3 10-2 10-1 1 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Square Wave Pulse Duration (s) Fig. 21 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 12FL Series Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series Revision: 11-Jan-18 Document Number: 93138 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6FL(R), VS-12FL(R), VS-16FL(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 F L R 60 M S02 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current code I(AVG) = exact current rating 3 - F = diode 4 - Omit = standard recovery diode L = only for fast diode 5 - Omit = stud forward polarity R = stud reverse polarity 6 - Voltage code x 10 = VRRM (see Voltage Ratings table) 7 - Outlines: Omit = stud base UNF thread M = stud base metric thread 8 - trr code only for fast diode (see Recovery Characteristics table) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93138 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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