VS-16FR100

VS-16F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 16 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Designed and qualified for industrial and consumer level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS • Battery charges IF(AV) 16 A Package DO-4 (DO-203AA) Circuit configuration Single • Converters • Power supplies • Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) I2t VRRM UNITS 16 A TC 140 °C 25 A 50 Hz 350 60 Hz 370 IF(RMS) IFSM VALUES A 50 Hz 612 60 Hz 560 Range 100 to 1200 V -65 to +175 °C IRRM MAXIMUM AT TJ = 175 °C mA TJ A2s ELECTRICAL SPECIFICATIONS SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-16F(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 100 150 20 200 275 40 400 500 60 600 725 80 800 950 100 1000 1200 120 1200 1400 12 Revision: 11-Jan-18 Document Number: 93491 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature Maximum RMS forward current IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current VALUES IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied A 140 °C 25 A 350 No voltage reapplied 100 % VRRM reapplied UNITS 16 370 A 295 Sinusoidal half wave, initial TJ = TJ maximum 310 612 560 100 % VRRM reapplied A2s 435 395 t = 0.1 to 10 ms, no voltage reapplied 6120 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.77 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.90 A2s V Low level value of forward  slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 7.80 High level value of forward  slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 5.70 Ipk = 50 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.23 V VALUES UNITS m Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ -65 to +175 Maximum storage temperature range TStg -65 to +200 Maximum thermal resistance, junction to case RthJC DC operation 1.6 Maximum thermal resistance,  case to heat sink RthCS Mounting surface, smooth, flat and greased 0.5 °C K/W Not lubricated threads 1.5 + 0 - 10 % (13) N·m (lbf · in) Lubricated threads 1.2 + 0 - 10 % (10) N·m (lbf · in) 7 g 0.25 oz. Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.31 0.23 120° 0.38 0.40 90° 0.49 0.54 60° 0.72 0.75 30° 1.20 1.21 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93491 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16F(R) Series www.vishay.com 180 16F(R) Series R thJC (DC) = 1.6 K/W 16F(R) Series R thJC (DC) = 1.6 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 180 Vishay Semiconductors 170 160 Conduction Angle 150 90° 140 60° 170 160 Conduction Period 150 90° 60° 120° 140 120° 30° 30° 180° 130 180° DC 130 0 4 8 12 16 20 0 5 Average Forward Current (A) 15 20 25 30 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 10 Fig. 2 - Current Ratings Characteristics 20 R 180° 120° 90° 60° 30° 16 6K = 4K /W 8 K/ W 10 K /W 12 RMS Limit -D elta R 15 K/W 8 20 K/W Conduction Angle 30 K/W 4 0 th SA /W 16F(R) Series TJ = 175°C 0 4 8 12 16 Average Forward Current (A) 25 20 50 75 100 Maximum Allowable Ambient Temperature (°C) Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics 25 DC 180° 120° 90° 60° 30° 20 15 R th 6K /W SA RMS Limit 8 K/ W 10 K /W =4 K/W -D elta R 1 5 K/W 10 20 K/W Conduction Period 30 K/W 5 16F(R) Series TJ = 175°C 0 0 5 10 15 20 25 30 25 50 75 100 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93491 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16F(R) Series Instantaneous Forward Current (A) 325 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 275 250 225 200 175 16F(R) Series 150 125 1 10 1000 TJ = 25°C TJ = 175°C 100 10 16F(R) Series 1 0 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 350 325 300 275 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied 225 200 175 125 0.01 16F(R) Series 0.1 2 3 4 5 6 Fig. 7 - Forward Voltage Drop Characteristics 250 150 1 Instantaneous Forward Voltage (V) ZthJC - Transient Thermal Impedance (°C/W) Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com 1 Pulse Train Duration (s) 10 Steady State Value R thJC = 1.6 K/W (DC Operation) 1 16F(R) Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code VS- 16 F R 120 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating: code = IF(AV) 3 - F = standard device 4 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = stud base DO-4 (DO-203AA) 10-32UNF-2A M = stud base DO-4 (DO-203AA) M5 x 0.8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93491 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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