VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
FEATURES
Base
cathode
2
•
•
•
•
175 °C TJ operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
2
1
3
Anode
1
3
N/C
D2PAK (TO-263AB)
PRIMARY CHARACTERISTICS
IF(AV)
18 A
VR
35 V, 40 V, 45 V
VF at IF
0.53 V
IRM
25 mA at 125 °C
TJ max.
175 °C
EAS
24 mJ
Package
D2PAK (TO-263AB)
Circuit configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
18 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
18
A
35 to 45
V
1800
A
0.53
V
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-18TQ035S-M3
VS-18TQ040S-M3
VS-18TQ045S-M3
UNITS
35
40
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 149 °C, rectangular waveform
18
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
24
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
A
Repetitive avalanche current
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and
with rated VRRM
applied
1800
390
A
Revision: 21-Dec-2021
Document Number: 94928
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VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
18 A
Maximum forward voltage drop
See fig. 1
VFM (1)
18 A
IRM (1)
0.72
0.67
2.5
VR = Rated VR
TJ = 125 °C
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance
LS
Measured lead to lead 5 mm from package body
dV/dt
mA
25
Maximum junction capacitance
Maximum voltage rate of change
V
0.53
TJ = 125 °C
TJ = 25 °C
UNITS
0.60
TJ = 25 °C
36 A
36 A
Maximum reverse leakage current
See fig. 2
VALUES
Rated VR
1400
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 175
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
1.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
Approximate weight
Mounting torque
(lbf · in)
18TQ035S
Case style D2PAK (TO-263AB)
Marking device
18TQ040S
18TQ045S
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
TJ = 175 °C
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.1
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 21-Dec-2021
Document Number: 94928
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
.
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
15
18TQ
RthJC (DC) = 1.50 °C/W
175
Average Power Loss (W)
Allowable Case Temperature (°C)
180
170
165
DC
160
155
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
10
RMS limit
5
DC
0
150
0
4
8
12
16
20
24
28
0
4
8
12
16
20
24
28
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 21-Dec-2021
Document Number: 94928
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 21-Dec-2021
Document Number: 94928
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
18
T
Q
045
S
1
2
3
4
5
6
TRL -M3
7
1
-
Vishay Semiconductors product
2
-
Current rating (18 A)
3
-
Circuit configuration: T = TO-220
4
-
Schottky “Q” series
5
-
Voltage ratings
6
-
S = D2PAK (TO-263AB)
7
-
8
035 = 35 V
040 = 40 V
045 = 45 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
VS-18TQ035S-M3
50
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-18TQ035STRL-M3
800
13" diameter plastic tape and reel
VS-18TQ035STRR-M3
800
13" diameter plastic tape and reel
VS-18TQ045S-M3
50
Antistatic plastic tubes
VS-18TQ045STRL-M3
800
13" diameter plastic tape and reel
VS-18TQ045STRR-M3
800
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?96209
Revision: 21-Dec-2021
Document Number: 94928
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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Revision: 01-Jan-2022
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