VS-1N3210R

VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, (Stud Version) 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) 15 A Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER IF(AV) IFSM I2t TC UNITS 15 (1) A 150 (1) °C 50 Hz 239 60 Hz 250 (1) 50 Hz 286 60 Hz 260 I2t VRRM VALUES A A2s A2s 3870 Range TJ 50 to 600 V -65 to +175 °C Note (1) JEDEC® registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-1N3208 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = -65 °C TO 175 °C) (TJ = -65 °C TO 175 °C) V V 50 (1) 50 (1) VS-1N3209 100 (1) 100 (1) VS-1N3210 200 (1) 200 (1) VS-1N3211 300 (1) 300 (1) VS-1N3212 400 (1) 400 (1) VS-1N3213 500 (1) 500 (1) 600 (1) 600 (1) VS-1N3214 Notes • Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R (1) JEDEC® registered values Revision: 11-Jan-18 Document Number: 93496 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3208 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum average forward current  at case temperature SYMBOL IF(AV) TEST CONDITIONS 180° sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current IFSM Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing I2t t = 10 ms Maximum I2t for individual device fusing Maximum I2t for individual device fusing t = 8.3 ms I2t (2) UNITS 15 (1) A 150 Following any rated load condition and with rated VRRM applied (1) °C 239 250 (1) A Following any rated load condition and with VRRM applied following surge = 0 284 With rated VRRM applied following surge, initial TJ = 150 °C 286 With VRRM = 0 following surge, initial TJ = 150 °C t = 8.3 ms VALUES 297 260 A2s 403 368 t = 0.1 ms to 10 ms, VRRM = 0 following surge 3870 A2s Maximum forward voltage drop VFM IF(AV) = 15 A (47.1 A peak), TC = 150 °C 1.5 (1) V Maximum average reverse current IR(AV) Maximum rated IF(AV) and TC = 150 °C 10 (1) mA VALUES UNITS -65 to 175 (1) °C Notes (1) JEDEC® registered values (2) I2t for time t = I2t x t x x THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating  and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg Maximum internal thermal resistance, junction to case RthJC DC operation 0.65 Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased 0.25 °C/W Maximum allowable mounting torque (+0 %, -10 %) Not lubricated thread, tighting on nut (2) 3.4 (30) Lubricated thread, tighting on nut (2) 2.3 (20) Not lubricated thread, tighting on hexagon (3) Lubricated thread, tighting on hexagon Weight Case style JEDEC® 4.2 (37) (3) 3.2 (28) 28.5 g 1 oz. DO-5 (DO-203AB) Notes (1) JEDEC® registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Revision: 11-Jan-18 Document Number: 93496 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3208 Series www.vishay.com Vishay Semiconductors 120 30 Ø DC 25 Conduction period 20 180° 15 120° 10 60° 5 180° 90 120° 80 DC 70 60 50 TJ = 140 °C 40 30 Ø 20 Conduction period 10 0 0 110 120 130 140 150 160 170 0 180 10 20 30 40 50 60 70 80 90 Maximum Allowable Case Temperature (°C) Average Forward Current Over Full Cycle (A) Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature Fig. 3 - Maximum Low Level Forward Power Loss vs. Average Forward Current 250 105 Average Forward Power Loss Over Full Cycle (W) At any rated load condition and with rated VRRM following surge Peak Half Sine Wave Forward Current (A) 60° 100 Average Forward Power Loss Over Full Cycle (W) Average Forward Current Over Full Cycle (A) 35 200 150 50 Hz 60 Hz 100 1 2 4 6 8 10 20 104 120° 180° 103 60° TJ = 140 °C DC 102 Ø Conduction period 10 40 60 102 10 103 104 Average Forward Current Over Full Cycle (A) Fig. 2 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses Fig. 4 - Maximum High Level Forward Power Loss vs. Average Forward Current Instantaneous Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 103 102 TJ = 140 °C 10 TJ = 25 °C 1 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Fig. 5 - Maximum Forward Voltage vs. Forward Current LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95360 Revision: 11-Jan-18 Document Number: 93496 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) Ø 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) Ø 4.10 (0.16) Ø 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A 1.0 (0.04) MAX. 17.40 (0.68) MIN. Across flats Revision: 19-Nov-2020 Document Number: 95360 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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