VS-20ETS12THM3

VS-20ETS12THM3, VS-20ATS12HM3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Glass passivated pellet chip junction 4 2 • AEC-Q101 qualified • Meets JESD 201 class 1A whisker test 1 1 3 2L TO-220AC 2 • Flexible solution rectification 3 reliable AC power • High surge, low VF rugged blocking diode for DC charging stations TO-220AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode to base 2, 4 Base cathode 2 for APPLICATIONS • On-board and off-board EV/HEV battery chargers 1 Cathode 3 Anode 1 Anode VS-20ETS12THM3 • Input rectification 3 Anode DESCRIPTION VS-20ATS12HM3 High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge).      PRIMARY CHARACTERISTICS IF(AV) 20 A VR 1200 V VF at IF 1.1 V IFSM 300 A TJ max. 150 °C Package 2L TO-220AC, 3L TO-220AB Circuit configuration Single, common anode OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C,  TJ = 125 °C common heatsink of 1 °C/W SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A VALUES UNITS 20 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VRRM 1200 V IFSM 300 A VF 10 A, TJ = 25 °C TJ 1.0 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VS-20ETS12THM3, VS-20ATS12HM3 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 1200 1300 1 Revision: 27-Mar-2019 Document Number: 96523 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS12THM3, VS-20ATS12HM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I 2t Maximum I2t for fusing I2t UNITS 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s VALUES UNITS 1.1 V 10.4 m 0.85 V A A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.1 VR = Rated VRRM TJ = 150 °C mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -40 to +150 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation 1.3 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth, and greased 0.5 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device Case style 2L TO-220AC 20ETS12TH Case style 3L TO-220AB 20ATS12H 150 150 RthJC (DC) = 1.3 °C/W 140 Ø 130 Conduction angle 120 110 100 30° 60° 90° 120° Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 1.3 °C/W 140 130 Ø Conduction period 120 30° 110 60° 90° 100 120° 180° 180° DC 90 90 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 35 Revision: 27-Mar-2019 Document Number: 96523 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS12THM3, VS-20ATS12HM3 www.vishay.com Vishay Semiconductors 300 180° 120° 90° 60° 30° 25 20 Peak Half Sine Wave Forward Current (A) Maxiumum Average Forward Power Loss (W) 30 RMS limit 15 10 Ø Conduction angle 5 250 200 150 100 TJ = 150 °C 50 0 0 4 8 12 16 20 1 24 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 35 300 DC 180° 120° 90° 60° 30° 30 25 Peak Half Sine Wave Forward Current (A) Maxiumum Average Forward Power Loss (W) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 20 RMS limit 15 10 Ø Conduction period 5 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 250 200 150 100 TJ = 150 °C 50 0 0 5 10 15 20 0.1 0.01 25 1 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 TJ = 25 °C TJ = 150 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 27-Mar-2019 Document Number: 96523 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS12THM3, VS-20ATS12HM3 www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 T H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: E = 2L TO-220AC A = 3L TO-220AB 4 - Package: T = TO-220 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - • None = TO-220AB • T = True pin TO-220 8 - H = AEC-Q101 qualified 9 - Environmental digit: 12 = 1200 V M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETS12THM3 50 1000 Antistatic plastic tubes VS-20ATS12HM3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information 2L TO-220AC www.vishay.com/doc?96069 3L TO-220AB www.vishay.com/doc?95222 2L TO-220AC www.vishay.com/doc?95391 3L TO-220AB www.vishay.com/doc?95028 Revision: 27-Mar-2019 Document Number: 96523 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS12THM3, VS-20ATS12HM3 www.vishay.com SPICE model Vishay Semiconductors www.vishay.com/doc?96046 Revision: 27-Mar-2019 Document Number: 96523 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L (b, b2) Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 A1 1.14 1.40 0.045 0.055 NOTES SYMBOL MILLIMETERS INCHES NOTES MIN. MAX. MIN. MAX. D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 A2 2.56 2.92 0.101 0.115 E1 6.86 8.89 0.270 0.350 6 b 0.69 1.01 0.027 0.040 E2 - 0.76 - 0.030 7 b1 0.38 0.97 0.015 0.038 4 e 2.41 2.67 0.095 0.105 b2 1.20 1.73 0.047 0.068 e1 4.88 5.28 0.192 0.208 b3 1.14 1.73 0.045 0.068 4 H1 5.84 6.86 0.230 0.270 c 0.36 0.61 0.014 0.024 L 13.52 14.02 0.532 0.552 c1 0.36 0.56 0.014 0.022 4 L1 3.32 3.82 0.131 0.150 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Revision: 06-Mar-2020 Document Number: 95222 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) A Thermal pad E A1 Q (6) H1 (7) (6) D H1 D2 (6) Detail B D1 1 2 (2) L1 C E1 (6) 1 2 L D C Base metal D C L1 (2) A b1, b3 (4) Section C - C and D - D View A - A A2 Plating c1 (4) c c 2 x b 2 x b2 Detail B e1 (b, b2) 0.015 M B A M SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6 A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7 A2 2.56 2.92 0.101 0.115 e1 4.88 5.28 0.192 0.208 b 0.69 1.01 0.027 0.040 H1 5.84 6.86 0.230 0.270 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 4 4 c 0.36 0.61 0.014 0.024 c1 0.36 0.56 0.014 0.022 4 3 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480" Revision: 09-Sep-2019 Document Number: 96069 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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