VS-25RIA60M

VS-25RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 25 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available TO-208AA (TO-48) • Types up to 1200 V VDRM/VRRM • Designed and qualified for industrial and consumer level PRODUCT SUMMARY • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Package TO-208AA (TO-48) Diode variation Single SCR IT(AV) 25 A VDRM/VRRM 100 V to 1200 V VTM 1.70 V • Phase control applications IGT 60 mA TJ -65 °C to 125 °C • Can be supplied to meet stringent military, aerospace and other high reliability requirements TYPICAL APPLICATIONS • Medium power switching MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) I2t A TC 85 °C 40 A 50 Hz 420 60 Hz 440 50 Hz 867 60 Hz 790 VDRM/VRRM tq UNITS 25 IT(RMS) ITSM VALUES Typical TJ A A2s 100 to 1200 V 110 μs -65 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-25RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM mA V 20 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with t  5 ms p Revision: 11-Mar-14 Document Number: 93701 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS 25 A 85 °C 40 A 420 No voltage reapplied 100 % VRRM reapplied VALUES 440 350 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 370 867 790 615 A2s 560 t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 8670 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.99 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.40 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 10.1 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 5.7 Ipk = 79 A, TJ = 25 °C 1.70 A2s V m Maximum on-state voltage VTM Maximum holding current IH Latching current IL TJ = 25 °C, anode supply 6 V, resistive load 130 200 V mA SWITCHING PARAMETER SYMBOL VDRM  600 V Maximum rate of rise of turned-on current VDRM  800 V VDRM  1000 V Typical reverse recovery time Typical turn-off time VALUES UNITS 200 dI/dt VDRM  1600 V Typical turn-on time TEST CONDITIONS TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A 180 160 A/μs 150 tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9 trr TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,  dI/dt = - 10 A/μs 4 tq TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W μs 110 Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 100 TJ = TJ maximum linear to 67 % rated VDRM 300 (1) UNITS V/μs Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90 Revision: 11-Mar-14 Document Number: 93701 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) TEST CONDITIONS VALUES 8.0 TJ = TJ maximum 2.0 UNITS W Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V TJ = - 65 °C 90 DC gate current required to trigger IGT TJ = 25 °C Maximum required gate trigger  current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 °C TJ = - 65 °C 60 mA 35 3.0 V DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C 1.0 DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value 2.0 mA 0.2 V VALUES UNITS - 65 to 125 °C DC gate voltage not to trigger VGD TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 2.0 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum operating junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.75 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.35 K/W Non-lubricated threads 3.4 + 0 - 10 % (30) Lubricated threads 23 + 0 - 10 % (20) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf in) 14 g 0.49 oz. TO-208AA (TO-48) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.17 0.13 120° 0.21 0.22 90° 0.27 0.30 60° 0.40 0.42 30° 0.69 0.70 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 93701 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series Vishay Semiconductors 130 25RIA Series RthJC (DC) = 0.75 K/W 120 110 Conduction Angle 30° 100 60° 90° 120° 180° 90 80 0 5 10 15 20 25 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 25RIA Series R thJC (DC) = 0.75 K/W 120 110 Conduction Period 30° 100 60° 90° 120° 90 180° DC 80 0 30 10 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 30 40 Fig. 1 - Current Ratings Characteristics 45 3K /W R 25 K/ W a elt -D 30 2 W K/ 35 =1 180° 120° 90° 60° 30° 40 A hS Rt Maximum Average On-state Power Loss (W) 20 Average On-state Current (A) 4K /W 5K /W RMS Limit 20 15 Conduction Angle 10 25RIA Series TJ = 125°C 5 7K /W 0 0 5 10 15 20 25 Average On-state Current (A) 30 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 60 DC 180° 120° 90° 60° 30° 55 1 W K/ ta el -D 40 = 45 SA th 50 R 2K /W 35 R Maximum Average On-state Power Loss (W) Fig. 2 - On-State Power Loss Characteristics 3K /W 4K /W 30 25 RMS Limit 20 15 10 Conduction Period 5K /W 25RIA Series TJ = 125°C 7 K/W 5 0 0 5 10 15 20 25 30 Average On-state Current (A) 35 0 40 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics Revision: 11-Mar-14 Document Number: 93701 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com 450 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 325 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 Vishay Semiconductors 300 275 250 225 25RIA Series 200 175 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 425 400 375 350 325 300 275 250 225 200 175 25RIA Series 150 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 25RIA Series 100 10 TJ = 25°C TJ = 125°C 1 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 6 - Forward Voltage Drop Characteristics 1 Steady State Value R thJC = 0.75 K/W (DC Operation) 0.1 25RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics Revision: 11-Mar-14 Document Number: 93701 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr = 6 µs b) Recommended load line for