VS-25TTS12FP-M3

VS-25TTS08FP-M3, VS-25TTS12FP-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 25 A 2 (A) FEATURES • Designed and qualified for industrial level • Fully isolated package (VINS = 2500 VRMS) • UL pending • 125 °C max. operating junction temperature 1 2 3 1 (K) (G) 3 3L TO-220 FullPAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 16 A VDRM/VRRM 800 V, 1200 V • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge VTM 1.25 V DESCRIPTION IGT 45 mA TJ -40 °C to 125 °C Package 3L TO-220 FullPAK Circuit configuration Single SCR The VS-25TTS...FP... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A VALUES UNITS MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform 25 IRMS VRRM/VDRM ITSM VT 16 16 A, TJ = 25 °C A 800, 1200 V 350 A 1.25 V dV/dt 500 V/μs dI/dt 150 A/μs -40 to +125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA VS-25TTS08FP-M3 800 800 VS-25TTS12FP-M3 1200 1200 TJ VOLTAGE RATINGS PART NUMBER 10 Revision: 09-Jan-18 Document Number: 96300 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08FP-M3, VS-25TTS12FP-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle,  non-repetitive surge current ITSM TEST CONDITIONS VALUES TYP. MAX. TC = 51 °C, 180° conduction half sine wave UNITS 16 25 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1ms to 10 ms, no voltage reapplied 6300 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current rt VT(TO) IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C A2s 0.5 VR = Rated VRRM/VDRM 10 Holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A,  TJ = 25 °C Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C 200 TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 500 V/μs 150 A/μs VALUES UNITS Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 150 - mA TRIGGERING PARAMETER TEST CONDITIONS SYMBOL PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger IGT Maximum required DC gate  voltage to trigger VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 µs 110 Revision: 09-Jan-18 Document Number: 96300 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08FP-M3, VS-25TTS12FP-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS DC operation Mounting surface, smooth, and greased 0.5 0.07 oz. maximum 12 (10) kgf · cm (lbf · in) 100 80 60 60° 90° 120° 20 180° 0 5 10 15 20 Average On-State Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 120 30° 140 120 100 80 60 60° 90° 120° 180° DC 0 5 10 15 20 25 Average On-state Current (A) Fig. 2 - Current Rating Characteristics 25TTS12FP 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Angle 5 TJ = 125 °C 0 0 4 8 12 16 20 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics 30 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 25TTS08FP 25 Fig. 1 - Current Rating Characteristics 20 g 6 (5) 140 0 °C/W 62 Case style 3L TO-220 FullPAK 30° °C minimum Marking device 40 -40 to 125 2 Mounting torque 0 UNITS 2.5 Approximate weight 40 VALUES 35 DC 180° 120° 90° 60° 30° 30 25 20 RMS Limit 15 Conduction Period 10 TJ = 125 °C 5 0 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 09-Jan-18 Document Number: 96300 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08FP-M3, VS-25TTS12FP-M3 350 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At any rated load condition and with Rated V RRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 250 200 150 1 10 100 400 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 350 300 250 200 150 100 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25 °C TJ = 125 °C 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Thermal Impedance ZthJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 09-Jan-18 Document Number: 96300 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08FP-M3, VS-25TTS12FP-M3 www.vishay.com Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) 1 VGD TJ = -10 °C TJ = 125 °C TJ = 25 °C Instantaneous Gate Voltage (V) 100 (3) (4) IGD (2) (1) Frequenc y Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Circuit configuration: 4 - Package: T = single thyristor T = TO-220AB 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - FullPAK 8 - Environmental digit: Standard recovery rectifier 08 = 800 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-25TTS08FP-M3 50 1000 Antistatic plastic tubes VS-25TTS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96155 Part marking information www.vishay.com/doc?95456 Revision: 09-Jan-18 Document Number: 96300 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 2.54 TYP. 1.20 1.47 1.30 1.05 Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Notes (1) All dimensions are in mm (2) Package body size exclude mold flash and burrs. Moldflash should be less than 6 mils Revision: 06-Jul-17 Document Number: 96155 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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