VS-2EMH01HM3/5AT

VS-2EMH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum temperature Cathode Anode operating junction • Specified for output and snubber operation • Low forward voltage drop • Low leakage current SMA (DO-214AC) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) 2A These devices are intended for use in snubber, boost, lighting, piezo injection, as high frequency rectifiers, and freewheeling diodes. VR 100 V VF at IF 0.75 V trr 25 ns TJ max. 175 °C Package SMA (DO-214AC) Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TSp = 138 °C 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 50 Operating junction and storage temperatures TJ, TStg -55 to +175 A °C Revision: 20-Jul-2020 Document Number: 95831 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EMH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL VBR, VR Breakdown voltage, blocking voltage Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 2 A - 0.88 0.95 0.82 IR = 100 μA UNITS V IF = 2 A, TJ = 125 °C - 0.75 VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 0.6 8 VR = 100 V - 8.5 - pF UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 24 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 16 - - 22 - - 2 - - 3 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr IF = 2 A, dIF/dt = 200 A/μs, VR = 160 V TJ = 25 °C TJ = 125 °C ns A TJ = 25 °C - 16 - TJ = 125 °C - 30 - MIN. TYP. MAX. UNITS -55 - 175 °C - 11 21 °C/W - - 125 °C/W nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to lead RthJL Device mounted on PCB with 2 x 3.5 mm soldering lands Thermal resistance, junction to ambient RthJA Device mounted on PCB with recommended pad size 0.07 Approximate weight 0.002 Marking device Case style SMA (DO-214AC) 100 oz. 2H1 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) g TJ = 175 °C 10 1 TJ = 150 °C TJ = 125 °C 10 175 °C 150 °C 1 125 °C 0.1 0.01 25 °C 0.001 TJ = 25 °C 0.1 0.0001 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 20-Jul-2020 Document Number: 95831 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EMH01HM3 www.vishay.com Vishay Semiconductors 3 RMS limit 2.5 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 2 1 0.5 1 0 0 25 50 75 100 0 0.5 1 1.5 2 2.5 3 3.5 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 35 30 170 25 160 DC trr (ns) Allowable Case Temperature (°C) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1.5 150 Square wave (D = 0.50) Rated VR applied 140 20 125 °C 15 10 25 °C 5 See note (1) 130 0 0 0.5 1 1.5 2 2.5 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 45 40 125 °C Qrr (nC) 35 30 25 25 °C 20 15 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 20-Jul-2020 Document Number: 95831 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EMH01HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 2 E M H 01 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - M = SMA package 5 - Process type, 6 - Voltage code (01 = 100 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N VS-2EMH01HM3/5AT QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 7500 7500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96376 Revision: 20-Jul-2020 Document Number: 95831 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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