VS-2ENH02HM3/84A

VS-2ENH01HM3, VS-2ENH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt® FEATURES eSMP® Series • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • For PFC, CRM snubber operation SMP (DO-220AA) Cathode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATION 3D 3D For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial and automotive applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMP (DO-220AA) IF(AV) 2A VR 100 V, 200 V VF at IF 0.79 V IFSM 40 A trr (typ.) 23 ns Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable J-STD-002, meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VS-2ENH01HM3 Peak repetitive reverse voltage VS-2ENH02HM3 TEST CONDITIONS VALUES 100 VRRM 200 Average rectified forward current IF(AV) TC = 158 °C 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 10 ms sine pulse 40 Operating junction and storage temperatures TJ, TStg UNITS V A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VS-2ENH01HM3 VS-2ENH02HM3 VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 100 - - 200 - - IF = 2 A - 0.94 1.00 0.84 IF = 2 A, TJ = 150 °C - 0.79 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 VR = 200 V - 8 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96548 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2ENH01HM3, VS-2ENH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 23 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 28 TJ = 25 °C - 16 - - 25 - - 2.0 - - 3.1 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr IF = 2 A dIF/dt = 200 A/μs VR = 100 V TJ = 25 °C TJ = 125 °C UNITS ns A TJ = 25 °C - 15 - TJ = 125 °C - 37 - MIN. TYP. MAX. UNITS -55 - 175 °C Infinite heatsink - 7 9 PCB footprint 4.8 mm x 4.8 mm - 107 - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM(1) Thermal resistance, junction to ambient RthJA VS-2ENH01HM3 Marking device TEST CONDITIONS 2H1 Case style SMP (DO-220AA) VS-2ENH02HM3 °C/W 2H2 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) TJ = 175 °C 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 150 °C 1 125 °C 0.1 0.01 25 °C 0.001 TJ = -40 °C 0.0001 0.1 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 125 150 175 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96548 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2ENH01HM3, VS-2ENH02HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 180 3 175 2.5 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Transient Thermal Impedance, Junction to Case 170 DC 165 160 Square wave (D = 0.50) Rated VR applied 155 RMS limit 2 1.5 D = 0.01 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1 0.5 See note (1) 150 0 0 0.4 0.8 1.2 1.6 2 2.4 0 0.5 1 1.5 2 2.5 3 3.5 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 28-Jan-2021 Document Number: 96548 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2ENH01HM3, VS-2ENH02HM3 www.vishay.com Vishay Semiconductors 35 50 45 30 125 °C 40 Qrr (nC) trr (ns) 25 125 °C 20 25 °C 35 30 25 °C 25 15 20 10 15 5 10 100 1000 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 28-Jan-2021 Document Number: 96548 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2ENH01HM3, VS-2ENH02HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 2 E N H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - N = SMP package 5 - Process type, H = ultrafast recovery 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2ENH01HM3/84A 84A 3000 7" diameter plastic tape and reel VS-2ENH01HM3/85A 85A 10 000 13" diameter plastic tape and reel VS-2ENH02HM3/84A 84A 3000 7" diameter plastic tape and reel VS-2ENH02HM3/85A 85A 10 000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96547 Part marking information www.vishay.com/doc?96574 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96551 Revision: 28-Jan-2021 Document Number: 96548 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMP (DO-220AA) DIMENSIONS in inches (millimeters) Mounting pad layout: Revision: 11-Dec-2018 Document Number: 96547 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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