VS-300CNQ045PBF

VS-300CNQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 300 A FEATURES Lug terminal anode 1 • 150 °C TJ operation Lug terminal anode 2 • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS IF(AV) 300 A VR 45 V Package TO-244 Circuit configuration Two diodes common cathode The VS-300CNQ... center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Rectangular waveform IF(AV) VRRM IFSM tp = 5 μs sine VF 150 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 300 A 45 V 27 000 A 0.56 V -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-300CNQ045PbF UNITS 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 111 °C, rectangular waveform UNITS 150 per leg per device VALUES 300 A 5 μs sine or 3 μs rect. pulse 27 000 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 18 A, L = 1 mH 150 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 30 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 2400 Revision: 09-May-17 Document Number: 94175 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300CNQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 150 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 150 A IRM (1) Maximum junction capacitance per leg CT 0.77 0.75 15 VR = Rated VR TJ = 125 °C Typical series inductance per leg LS dV/dt mA 1100 VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Maximum voltage rate of change V 0.56 TJ = 125 °C TJ = 25 °C UNITS 0.61 TJ = 25 °C 300 A 300 A Maximum reverse leakage current per leg See fig. 2 VALUES 7750 From top of terminal hole to mounting plane Rated VR pF 6.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 55 - 150 °C per leg - - 0.28 - - 0.14 - 0.10 - - 68 - g - 2.4 - oz. Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque Thermal resistance, junction to case RthJC per module Thermal resistance, case to heatsink RthCS Weight °C/W 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 lbf ⋅ in 10 000 IR - Reverse Current (mA) 1000 IF - Instantaneous Forward Current (A) lbf ⋅ in (N ⋅ m) 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 TJ = 25 °C 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-May-17 Document Number: 94175 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300CNQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 RMS limit Average Power Loss (W) Allowable Case Temperature (°C) 160 140 DC 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 See note (1) 60 120 100 80 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 60 40 20 DC 0 0 50 100 150 200 250 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-May-17 Document Number: 94175 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300CNQ045PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) ORDERING INFORMATION TABLE Device code VS- 30 0 C N Q 1 2 3 4 5 6 2 - Vishay Semiconductors product Average current rating (x 10) 3 - Product silicon identification 4 - C = circuit configuration 5 - N = not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (045 = 45 V) 8 - Lead (Pb)-free 1 045 PbF 7 8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-May-17 Document Number: 94175 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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