VS-300U(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 300 A
FEATURES
• Alloy diode
• Popular series for rough service
• Stud cathode and stud anode version
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-9 (DO-205AB)
TYPICAL APPLICATIONS
• Welders
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
300 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
• Motor controls
• Battery chargers
• General industrial current rectification
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IFSM
I2t
VRRM
VALUES
UNITS
300
A
150
°C
50 Hz
6550
60 Hz
6850
A
50 Hz
214
60 Hz
195
Range
400
V
-65 to +200
°C
IRRM MAXIMUM
AT TJ = 175 °C
mA
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-300U(R)..
VOLTAGE
CODE
VRRM,
MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM,
MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
10
100
200
20
200
300
30
300
400
40
400
500
60
600
700
40
Revision: 11-Jan-18
Document Number: 93508
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VS-300U(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum value of threshold voltage
Maximum value of forward
slope resistance
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
VFM
UNITS
300
A
130
°C
6550
6850
A
5500
Sinusoidal half wave,
initial TJ = TJ maximum
5750
214
195
kA2s
151
100 % VRRM
reapplied
138
t = 0.1 to 10 ms, no voltage reapplied
VF(TO)
rf
Maximum forward voltage drop
VALUES
TJ = 200 °C
Ipk = 942 A, TJ = 25 °C
2140
kA2s
0.610
V
0.751
m
1.40
V
VALUES
UNITS
-65 to +200
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.18
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
K/W
Maximum allowed mounting torque
+0 -20 %
Not lubricated threads
37
Lubricated threads
28
Approximate weight
Nm
250
(JEDEC®)
Case style
see dimensions - link at the end of datasheet
g
DO-9 (DO-205AB) (1)
Note
(1) 302U-A uses case style B-26
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.015
120°
0.024
0.025
90°
0.031
0.034
60°
0.045
0.047
30°
0.077
0.077
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93508
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VS-300U(R) Series
200
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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300U40AM20
RthJC (DC) = 0.18 K/W
180
Conduction Angle
160
140
30°
60°
90°
120°
120
0
180°
50 100 150 200 250 300 350
200
300U40AM20
RthJC (DC) = 0.18 K/W
190
180
170
Conduction Period
160
150
140
30°
130
90°
120
120°
110
0
Average Forward Current (A)
500
150
Conduction Angle
100
300U40AM20
Tj = 200°C
K/
W
0.4
K/
W
0.5
K/W
0.7
K/W
1K
/W
1.5 K
/W
aR
elt
-D
RMS Limit
200
K/
W
W
K/
0.1
Maximum Average Forward Power Loss (W)
0.
2
0.
3
50
400
=
250
300
A
hS
Rt
300
200
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
350
100
180° DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
400
60°
3 K/W
0
0
50 100 150 200 250 300 350
250 50
Average Forward Current (A)
75
100 125 150 175 200
Maximum Allowable Ambient Temperature (°C)
500
DC
180°
120°
90°
60°
30°
450
-Δ
3
W
K/
W
0.
K/
K/
W
0.5
RMS Limit
200
0.7
Conduction Period
150
100
300U40AM20
Tj = 200°C
50
R
250
2
1
300
0.
0.
350
=
400
A
hS
Rt
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
K/W
K/W
1 K/
W
1.5 K
/W
3 K/W
0
0
100
200
300
400
Average Forward Current (A)
500
50
75
100 125 150
175
200
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93508
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VS-300U(R) Series
6000
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 200°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
5500
5000
4500
4000
3500
3000
2500
2000
300U40AM20
1500
1
10
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 200°C
6000
No Voltage Reapplied
5500
Rated Vrrm Reapplied
6500
5000
4500
4000
3500
3000
2500
2000
300U40AM20
1500
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
1000
Tj = 25°C
Tj = 200°C
100
300U40AM20
10
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value
RthJC = 0.18 K/W
(DC Operation)
0.01
300U40AM20
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 11-Jan-18
Document Number: 93508
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-300U(R) Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
0
U
40
A
M20
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
30 = essential part number
3
-
0 = standard device
2 = 300U top threaded version
4
-
• U = stud normal polarity (cathode to stud)
• UR = stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
A = essential part number
7
-
None = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
M20 = Metric device M20 x 1.5 (available with standard device only)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95340
Revision: 11-Jan-18
Document Number: 93508
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DO-9 (DO-205AB) and B-26 for 300U(R) Series
DIMENSIONS FOR 300U(R)-A SERIES - DO-9 (DO-205AB) in millimeters (inches)
4.32
19.18 (0.755)
Max.
(0.17
Max 0)
.
11.51 (0.453)
10.74 (0.423)
Ø 8.89 (0.350)
Ø 8.38 (0.330)
13.46 (0.530)
11.94 (0.470)
149.9 (5.90)
134.6 (5.30)
Ø 27.94 (1.10)
Max.
53.34 (2.10)
Max.
9.27 (0.365)
7.87 (0.310)
3.18 (0.125)
Max.
Unthreaded
portion
21.03 (0.83)
20.14 (0.79)
31.75 (1.250)
Across flats
30.94 (1.218)
Ø 19.02 (0.749)
Max.
3/4" 16UNF-2A
for metric device: M20 x 1.5
contact factory
DIMENSIONS FOR 302U(R)-A SERIES - B-26 in millimeters (inches)
3/8"-24UNF-2A
Ø 9.50 (0.374)
Max.
16.51 (0.65)
14.99 (0.59)
18.29 (0.72)
Across flats
16.76 (0.66)
Ø 27.94 (1.10)
Max.
58.67 (2.31)
55.63 (2.19)
28.45 (1.12)
Max.
9.27 (0.365)
7.87 (0.310)
3.18 (0.125)
Max.
21.03 (0.828)
20.14 (0.793)
31.75 (1.250) Max.
Across flats
Ø 19.02 (0.749)
Max.
3/4" 16UNF-2A
Revision: 15-Mar-17
Document Number: 95340
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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