VS-30CTQ100-M3

VS-30CTQ080-M3, VS-30CTQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common cathode Anode 3L TO-220AB • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Anode 2 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VR 80 V, 100 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.67 V IRM max. 7.0 mA at 125 °C TJ max. 175 °C EAS 7.50 mJ Package 3L TO-220AB Circuit configuration Common cathode DESCRIPTION The center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 15 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 30 A 80/100 V 850 A 0.67 V -55 to +175 °C VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage Maximum working peak reverse voltage VRWM VS-30CTQ080-M3 VS-30CTQ100-M3 UNITS 80 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current, see fig. 5 SYMBOL per device per leg IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 129 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 30 15 UNITS A 850 Maximum peak one cycle non-repetitive surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse A 275 Revision: 17-Aug-17 Document Number: 96277 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTQ080-M3, VS-30CTQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 15 A Maximum forward voltage drop per leg  See fig. 1 VFM (1) TJ = 25 °C 30 A 15 A TJ = 125 °C 30 A Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg IRM (1) CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.86 1.05 V 0.67 0.82 0.55 mA 7.0 500 pF 8.0 nH 10 000 V/μs VALUES UNITS - 55 to 175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case per leg 3.25 RthJC Maximum thermal resistance,  junction to case per package DC operation 1.63 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device °C/W 0.50 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Case style 3L TO-220AB 30CTQ080 30CTQ100 Revision: 17-Aug-17 Document Number: 96277 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTQ080-M3, VS-30CTQ100-M3 Vishay Semiconductors 100 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0 1.0 0.5 1.5 0 2.5 2.0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 20 0 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.001 0.00001 PDM t1 t2 Single pulse (thermal resistance) 0.0001 0.001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 17-Aug-17 Document Number: 96277 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTQ080-M3, VS-30CTQ100-M3 www.vishay.com Vishay Semiconductors 7 170 DC 160 150 Square wave (D = 0.50) 80 % rated VR applied 140 130 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 6 Average Power Loss (W) Allowable Case Temperature (°C) 180 5 4 RMS limit 3 DC 2 1 See note (1) 100 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V (1) Revision: 17-Aug-17 Document Number: 96277 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTQ080-M3, VS-30CTQ100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 C T Q 100 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: 4 - C = common cathode Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings 7 - Environmental digit 080 = 80 V 100 = 100 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30CTQ080-M3 50 1000 Antistatic plastic tube VS-30CTQ100-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 17-Aug-17 Document Number: 96277 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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