VS-30ETH06-1PBF

VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2 1 • 175 °C operating junction temperature 1 3 D2PAK (TO-263AB) 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-262AA 3 • AEC-Q101 qualified Base cathode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 DESCRIPTION / APPLICATIONS 3 Anode 1 N/C State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.   3 Anode 1 N/C VS-30ETH06-1PbF VS-30ETH06SPbF PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.34 V trr typ. 28 ns TJ max. 175 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 103 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C 200 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 30 A MIN. TYP. MAX. 600 - - - 2.0 2.6 IF = 30 A, TJ = 150 °C - 1.34 1.75 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 60 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 27-Oct-17 Document Number: 94020 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 28 35 TJ = 25 °C - 31 - TJ = 125 °C - 77 - - 3.5 - - 7.7 - - 65 - - 345 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case per leg RthJC - 0.7 1.1 Thermal resistance, junction-to-ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.2 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge IF = 30 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C TJ = 125 °C TJ = 25 °C Qrr TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Case style (TO-263AB) g 30ETH06S Case style TO-262AA 30ETH06-1 1000 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device D2PAK °C/W 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 94020 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 100 0 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 0.01 Single pulse (thermal resistance) 0.001 0.00001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 90 80 160 Average Power Loss (W) Allowable Case Temperature (°C) 180 DC 140 120 Square wave (D = 0.50) Rated VR applied 100 See note (1) 70 RMS limit 60 50 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 30 20 10 80 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current DC 0 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 27-Oct-17 Document Number: 94020 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors 90 1200 IF = 30 A IF = 15 A 80 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 70 800 Qrr (nC) trr (ns) 60 50 40 600 30 20 10 IF = 30 A IF = 15 A 400 VR = 200 V TJ = 125 °C TJ = 25 °C 200 0 100 0 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 27-Oct-17 Document Number: 94020 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30ETH06SPbF, VS-30ETH06-1PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E T H 06 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - E = single 4 - T = TO-220AA, D2PAK (TO-263AB) 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - S = D2PAK (TO-263AB) 8 - TRL PbF 8 9 -1 = TO-262AA None = tube (50 pieces) TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) 9 - PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95014 Part marking information www.vishay.com/doc?95008 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?96441 Revision: 27-Oct-17 Document Number: 94020 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK, TO-262 DIMENSIONS - D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 L3 2 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e L4 (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay Semiconductors DIMENSIONS - TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL A c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.06 4.83 0.160 0.190 0.119 A1 2.03 3.02 0.080 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000