VS-3C08ET07T-M3

VS-3C08ET07T-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 8 A FEATURES Base cathode 2 • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • MPS structure for high ruggedness to forward current surge events • Meets JESD 201 class 1A whisker test • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 3 Anode 1 Cathode 3 TO-220AC 2L LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Application Notes PRIMARY CHARACTERISTICS IF(AV) 8A DESCRIPTION / APPLICATIONS VR 650 V VF at IF at 150 °C 1.5 V TJ max. 175 °C IR at VR at 175 °C 1.9 μA QC (VR = 400 V) 22 nC Package TO-220AC 2L Circuit configuration Single Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. MECHANICAL DATA Case: TO-220AC 2L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) DC blocking voltage VDC Repetitive peak forward current IFRM Non-repetitive peak forward surge current IFSM Power dissipation Ptot (1) I2t value i Operating junction and storage temperatures 2 dt TEST CONDITIONS TC = 135 °C (DC) TC = 25 °C, f = 50 Hz, square wave, DC = 25 % VALUES V 8 A 650 V 35 A TC = 25 °C, tp = 10 ms, half sine wave 54 TC = 110 °C, tp = 10 ms, half sine wave 52 TC = 25 °C 58 TC = 110 °C 25 TC = 25 °C 13.5 TC = 110 °C 12.5 TJ(2), TStg UNITS 650 -55 to +175 A W A2s °C Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 22-Feb-2023 Document Number: 97039 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C08ET07T-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Forward voltage VF Reverse leakage current IR Total capacitance C Total capacitive charge QC MIN. TYP. MAX. IF = 8 A TEST CONDITIONS - 1.3 1.5 IF = 8 A, TJ = 150 °C - 1.50 1.80 IF = 8 A, TJ = 175 °C - 1.58 - UNITS V VR = VR rated - 0.25 45 VR = VR rated, TJ = 150 °C - 1.1 100 VR = VR rated, TJ = 175 °C - 1.9 - VR = 1 V, f = 1 MHz - 340 - VR = 400 V, f = 1 MHz - 34 - VR = 400 V, f = 1 MHz - 22 - nC MIN. TYP. MAX. UNITS - 2.0 2.6 °C/W μA pF THERMAL - MECHANICAL SPECIFICATIONS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Marking device 3C08ET07T Axis Title Axis Title 10000 1000 30 20 100 TJ = 125 °C TJ = 150 °C TJ = 175 °C 10 0 1000 1st line 2nd line TJ = 25 °C TJ = -55 °C 2nd line CT - Junction Capacitance (pF) 50 40 10000 1000 1st line 2nd line 2nd line IF - Instantaneous Forward Current (A) 60 100 100 TJ = 25 °C f = 1.0 MHz 10 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 VF - Forward Voltage Drop (V) 1 10 100 10 1000 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Axis Title Axis Title 10000 10000 10 TJ = 175 °C TJ = 25 °C TJ = 150 °C 1000 0.1 0.01 2nd line IFSM (A) 1000 1st line 2nd line 1 1st line 2nd line 2nd line IR - Reverse Current (µA) 1000 TJ = 110 °C 100 100 100 0.001 TJ = 125 °C TJ = 25 °C TJ = -55 °C 10 0.0001 0 100 200 300 400 500 600 700 10 0.01 10 0.1 1 10 VR - Reverse Voltage (V) tp (ms) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) Revision: 22-Feb-2023 Document Number: 97039 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C08ET07T-M3 www.vishay.com Vishay Semiconductors Axis Title 10000 1000 1st line 2nd line ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.00001 0.0001 0.001 100 10 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 5 - Typical Thermal Impedance ZthJC Characteristics Axis Title Axis Title 10000 8 10000 1000 140 100 120 6 1000 5 1st line 2nd line 160 2nd line Capacitive Energy (µJ) 7 1st line 2nd line 2nd line Allowable Case Temperature (°C) 180 4 3 100 TJ = 25 °C 2 1 10 100 0 2 4 6 8 10 0 10 0 100 200 400 500 600 700 IF - Continuous Forward Current (A) Reverse Voltage (V) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage Axis Title Axis Title 80 10000 10000 35 70 1000 RthJC typ. 50 40 RthJC max. 30 100 20 25 1000 1st line 2nd line 60 2nd line Capacitive Charge (nC) 30 1st line 2nd line 2nd line Allowable Input Power (W) 300 20 15 100 TJ = 25 °C 10 5 10 0 10 25 50 75 100 125 150 175 10 0 0 100 200 300 400 500 600 700 Case Temperature (°C) Reverse Voltage (V) Fig. 7 - Forward Power Loss Characteristics Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage Revision: 22-Feb-2023 Document Number: 97039 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C08ET07T-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3C 08 E T 07 T -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - 3C = SiC diode, Generation 3 3 - Current rating (08 = 8 A) 4 - E = single diode 5 - Package TO-220 6 - Voltage rating: (07 = 650 V) 7 - T = true 2 pin 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-3C08ET07T-M3 50/tube Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96069 Part marking information www.vishay.com/doc?95391 Revision: 22-Feb-2023 Document Number: 97039 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) A Thermal pad E A1 Q (6) H1 (7) (6) D H1 D2 (6) Detail B D1 1 2 (2) L1 C E1 (6) 1 2 L D C Base metal D C L1 (2) A b1, b3 (4) Section C - C and D - D View A - A A2 Plating c1 (4) c c 2 x b 2 x b2 Detail B e1 (b, b2) 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 E2 - 0.76 A2 2.56 2.92 0.101 0.115 e1 4.88 5.28 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 - 0.030 7 0.192 0.208 H1 5.84 6.86 0.230 0.270 4 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 4 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 c 0.36 0.61 0.014 0.024 c1 0.36 0.56 0.014 0.022 4 3 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480" Revision: 14-Mar-2022 Document Number: 96069 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000