VS-40CTQ150-M3

VS-40CTQ150-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 175 °C TJ operation • Very low forward voltage drop • High frequency operation Anode 3L TO-220AB Anode 2 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 x 20 A VR 150 V VF at IF 0.71 V IRM max. 15 mA at 125 °C TJ max. 175 °C EAS 1.0 mJ Package 3L TO-220AB Circuit configuration Common cathode DESCRIPTION The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM VALUES UNITS 40 A 150 V IFSM tp = 5 μs sine 1500 A VF 20 Apk, TJ = 125 °C (per leg) 0.71 V -55 to +175 °C TJ VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-40CTQ150-M3 UNITS 150 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current, see fig. 5 SYMBOL TEST CONDITIONS VALUES UNITS 20 per leg IF(AV) 50 % duty cycle at TC = 140 °C, rectangular waveform per device 40 A 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1500 Maximum peak one cycle non-repetitive surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.5 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 250 Revision: 14-Aug-17 Document Number: 96248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 40 A 20 A TJ = 125 °C 40 A Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg IRM (1) CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.93 1.16 V 0.71 0.85 50 µA 15 mA 450 pF 8.0 nH 10 000 V/μs VALUES UNITS - 55 to 175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink RthCS DC operation See fig. 4 1.5 DC operation 0.75 Mounting surface, smooth, and greased 0.5 Approximate weight Mounting torque Marking device minimum maximum Non-lubricated threads Case style 3L TO-220AB °C/W 2 g 0.07 oz. 6 (5) kgf · cm 12 (10) (lbf · in) 40CTQ150 Revision: 14-Aug-17 Document Number: 96248 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150-M3 Vishay Semiconductors 1000 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 1 0 0.4 0.8 1.2 0 1.6 20 40 60 80 100 120 140 160 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 40 80 120 160 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 0.01 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 14-Aug-17 Document Number: 96248 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150-M3 Vishay Semiconductors 25 180 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 160 140 Square wave (D = 0.50) 80% VR applied 120 20 RMS limit DC 15 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 10 5 See note (1) 0 100 0 5 10 15 20 25 0 30 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied (1) Revision: 14-Aug-17 Document Number: 96248 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ150-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 C T Q 150 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: C = Common cathode - 4 Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings (150 = 150 V) 7 - Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40CTQ150-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 14-Aug-17 Document Number: 96248 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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