VS-45EPF06L-M3

VS-45EPF06L-M3, VS-45APF06L-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 45 A FEATURES 2 1 1 2 3 3 TO-247AD 2L Base cathode 2 TO-247AD 3L Base cathode 2 • Very low forward voltage drop and short reverse recovery time • Glass passivated pellet chip junction • Designed and qualified according to JEDEC® - JESD 47 • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • AEC-Q101 qualified P/N available (VS-45EPF06LHM3, VS-45APF06LHM3) 1 Cathode 3 Anode VS-45EPF06L-M3 3 Anode 1 Anode VS-45APF06L-M3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. PRIMARY CHARACTERISTICS IF(AV) 45 A VR 600 V VF at IF 1.31 V DESCRIPTION IFSM 550 A trr 60 ns TJ max. 150 °C The VS-45EPF06L-M3, VS-45APF06L-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Snap factor 0.5 Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 45 A VRRM 600 V IFSM 550 A VF 20 A, TJ = 25 °C trr 1 A, 100 A /μs TJ 1.09 V 60 ns -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRSM, MAXIMUM VRRM, MAXIMUM NON-REPETITIVE PEAK REVERSE PEAK REVERSE VOLTAGE VOLTAGE V V VS-45EPF06L-M3 600 700 VS-45APF06L-M3 600 700 IRRM AT 150 °C mA 8 Revision: 10-Jul-2018 Document Number: 95999 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45EPF06L-M3, VS-45APF06L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 108 °C, 180° conduction half sine wave 45 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t 10 ms sine pulse, rated VRRM applied 462 10 ms sine pulse, no voltage reapplied 550 10 ms sine pulse, rated VRRM applied 1069 10 ms sine pulse, no voltage reapplied 1513 t = 0.1 ms to 10 ms, no voltage reapplied UNITS A A2s A2√s 15 125 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 45 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = rated VRRM UNITS 1.31 V 4.4 mΩ 1.1 V 0.1 mA 8 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 40 Apk 25 A/μs 25 °C Typical VALUES UNITS 180 ns 3.2 A 0.5 μC IFM trr ta tb dir dt t Qrr IRM(REC) 0.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, unction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.4 °C/W 40 Mounting surface, smooth, and greased 0.25 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AD 2L 45EPF06L Case style TO-247AD 3L 45APF06L Revision: 10-Jul-2018 Document Number: 95999 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45EPF06L-M3, VS-45APF06L-M3 150 RthJC (DC) = 0.40 °C/W 140 130 Conduction angle 120 110 100 90 30° 90° 120° 60° 180° 80 0 10 20 30 40 50 Max. Average On-state Power Loss (W) Vishay Semiconductors 100 180° 120° 90° 60° 30° 80 60 RMS limit 40 Conduction angle 20 TJ = 150 °C 0 0 40 50 60 70 80 Conduction angle 130 120 110 100 90 120° 60° 80 180° 90° 30° DC 70 0 20 40 60 80 600 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 500 400 300 200 100 1 Average On-State Current (A) 50 40 RMS limit 30 Conduction angle TJ = 150 °C 0 10 20 30 40 50 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Curent (A) 180° 120° 90° 60° 30° 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 80 20 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Max. Average On-state Power Loss (W) 30 Fig. 4 - Forward Power Loss Characteristics 140 0 20 Fig. 1 - Current Rating Characteristics RthJC (DC) = 0.40 °C/W 60 10 Average On-state Current (A) 150 70 DC Average On-State Current (A) Peak Half Sine Wave Forward Current (A) Max. Allowable Case Temperature (°C) Max. Allowable Case Temperature (°C) www.vishay.com 650 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 550 450 350 250 150 50 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 10-Jul-2018 Document Number: 95999 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45EPF06L-M3, VS-45APF06L-M3 Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 1 2 4 3 5 6 Instantaneous Forward Voltage (V) Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com 225 IFM = 80 A 200 IFM = 40 A 175 150 IFM = 20 A IFM = 10 A 125 100 IFM = 5 A 75 50 IFM = 1 A TJ = 25 °C 25 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A TJ = 150 °C 0.6 0.4 0.2 0 0 40 80 120 160 200 IFM = 80 A 3 IFM = 40 A 2 IFM = 20 A IFM = 10 A 1 IFM = 5 A IFM = 1 A 0 0 40 80 160 120 200 dI/dt - Rate of Fall of Forward Current (A/µs) 10 TJ = 150 °C IFM = 80 A 8 6 IFM = 40 A 4 IFM = 20 A IFM = 10 A 2 IFM = 5 A IFM = 1 A 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (ns) Fig. 8 - Thermal Impedance ZthJC Characteristics 0.8 TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (ns) Fig. 7 - Forward Voltage Drop Characteristics 4 25 TJ = 25 °C 20 IFM = 80 A IFM = 40 A 15 IFM = 20 A IFM = 10 A 10 IFM = 5 A 5 IFM = 1 A 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 10-Jul-2018 Document Number: 95999 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45EPF06L-M3, VS-45APF06L-M3 Irr - Typical Reverse Recovery Current (A) www.vishay.com Vishay Semiconductors 50 TJ = 150 °C 40 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 30 20 10 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 0.5 0.33 0.1 0.25 0.17 0.08 0.01 0.0001 Steady state value (DC operation) Single pulse 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 10-Jul-2018 Document Number: 95999 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45EPF06L-M3, VS-45APF06L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 45 E P F 06 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (45 = 45 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - 5 - Package: P = TO-247AD Type of silicon: F = fast recovery rectifier 6 - Voltage code x 100 = VRRM 7 - L = long leads 8 - 06 = 600 V Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-45EPF06L-M3 25 500 PACKAGING DESCRIPTION Antistatic plastic tubes VS-45APF06L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 10-Jul-2018 Document Number: 95999 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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