VS-60APH03L-N3

VS-60APH03L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® FEATURES • Hyperfast recovery time Base cathode • Low forward voltage drop • Low leakage current 2 • Soft recovery device • 175 °C operating junction temperature 1 • Designed and qualified according to JEDEC®-JESD 47 2 1 Anode 3 TO-247AD 3L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode DESCRIPTION / APPLICATIONS VS-60APH03L-N3 series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 300 V VF at IF 0.85 V trr typ. 28 ns TJ max. 175 °C Package TO-247AD 3L Circuit configuration Single The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for PDP and use in the output rectification stage for SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VALUES UNITS 300 V VR Continuous forward current IF(AV) TC = 103 °C 60 Single pulse forward current IFSM TJ = 25 °C, tp = 10 ms 450 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C MIN. TYP. MAX. UNITS 300 - - IF = 30 A - 1.0 1.25 IF = 60 A - - 1.45 IF = 30 A, TJ = 125 °C - 0.85 1.10 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 60 A, TJ = 125 °C - - 1.30 VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - - 100 V μA Reverse leakage current IR Junction capacitance CT VR = 300 V - 70 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 09-Jul-2019 Document Number: 96627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60APH03L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 28 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 34 - TJ = 25 °C - 42 - TJ = 125 °C - 64 - - 3.0 - - 8.5 - TJ = 25 °C - 65 - TJ = 125 °C - 273 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction to case RthJC - 0.56 0.80 Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.4 - - 6.0 - g - 0.22 - oz. 6.0 - 12 kgf. cm (12) - (10) (lbf.in) Reverse recovery time trr Peak recovery current TJ = 25 °C IRRM Reverse recovery charge TJ = 125 °C Qrr IF = 60 A dIF/dt = 200 A/μs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS °C/W Approximate Weight Mounting torque Case style TO-247AD 3L 60APH03L 1000 1000 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.3 100 150 °C 125 °C 10 100 °C 1 75 °C 50 °C 0.1 25 °C 0.01 0.001 0.6 0.9 1.2 1.5 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 50 100 150 200 250 300 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-2019 Document Number: 96627 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60APH03L-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 50 100 150 200 250 300 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) 180 120 160 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 DC 120 100 80 60 40 100 RMS Limit 80 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 60 40 20 0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Jul-2019 Document Number: 96627 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60APH03L-N3 www.vishay.com Vishay Semiconductors 90 900 80 800 typical value 700 70 IF = 60 A, 125 °C 600 Qrr (nC) trr (ns) 60 50 40 IF = 60 A, 125 °C 500 400 300 30 IF = 60 A, 25 °C 20 200 IF = 60 A, 25 °C 100 typical value 10 100 0 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 09-Jul-2019 Document Number: 96627 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60APH03L-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 A P H 03 L -N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: A = single diode 4 - P = TO-247 5 - H = hyperfast rectifier 6 - Voltage code (03 = 300 V) 7 - L = long lead 8 - -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60APH03L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95626 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?96075 Revision: 09-Jul-2019 Document Number: 96627 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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