VS-60EPF12-M3

VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • Glass passivated pellet chip junction • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time 1 1 2 3 3 TO-247AC 2L TO-247AC 3L 2 2 1 Cathode according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode Base cathode • Designed and qualified JEDEC®-JESD 47 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. 3 Anode Anode 1 VS-60EPF1... Anode 3 VS-60APF1... The VS-65EPF12-M3 and VS-65APF12-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 1000 V, 1200 V VF at IF 1.4 V IFSM 830 A trr 95 ns TJ max. 150 °C DESCRIPTION The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform VALUES UNITS 1000 to 1200 V 60 830 IFSM A trr 1 A, - 100 A/μs 95 VF 30 A, TJ = 25 °C 1.2 V TJ Range -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-60EPF10-M3, VS-60APF10-M3 1000 1100 VS-60EPF12-M3, VS-60APF12-M3 1200 1300 ns VOLTAGE RATINGS PART NUMBER 12 Revision: 29-Nov-2019 Document Number: 93721 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 103 °C, 180° conduction half sine wave 60 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t 10 ms sine pulse, rated VRRM applied 700 10 ms sine pulse, no voltage reapplied 830 10 ms sine pulse, rated VRRM applied 2450 10 ms sine pulse, no voltage reapplied 3460 t = 0.1 ms to 10 ms, no voltage reapplied UNITS A A2s 34 600 A2√s VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 60 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 4.6 mΩ 0.9 V 0.1 VR = Rated VRRM TJ = 150 °C 1.4 mA 12 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 60 Apk 25 A/μs 25 °C S VALUES UNITS 480 ns 8 A 2.7 μC IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS -40 to +150 °C 0.4 °C/W 40 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (Ibf · in) Approximate weight Mounting torque VALUES Case style TO-247AC 2L Marking device Case style TO-247AC 3L 60EPF10 60EPF12 60APF10 60APF12 Revision: 29-Nov-2019 Document Number: 93721 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors 140 60.PF.. Series RthJC (DC) = 0.4 °C/W 140 130 Ø Conduction angle 120 110 60° 100 120° 30° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 80 60 RMS limit Ø 40 Conduction period 20 60.PF.. Series TJ = 150 °C 0 0 10 20 30 50 40 60 70 20 0 40 60 80 100 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 800 At any rated load condition and with rated VRRM applied following surge. 60.PF.. Series RthJC (DC) = 0.4 °C/W 140 130 Ø Conduction period 120 110 30° 100 DC 60° Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 100 180° 90° 90 120° 90° 700 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 600 500 400 60.PF.. Series 180° 90 300 0 100 20 40 60 80 100 80 70 60 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 900 800 RMS limit 50 40 Ø 30 Conduction angle 20 0 10 20 30 40 50 60 70 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 700 600 500 400 60.PF.. Series TJ = 150 °C 10 0 10 Average Forward Current (A) 180° 120° 90° 60° 30° 90 1 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 120 300 0.01 60.PF.. Series 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 93721 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60.PF1.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 60.PF.. Series 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 600 12 000 trr - Typical Reverse Recovery Time (ns) 500 IFM = 60 A 400 IFM = 30 A 300 IFM = 10 A 200 IFM = 5 A 100 Qrr - Typical Reverse Recovery Charge (µC) 60.PF.. Series TJ = 25 °C IFM = 60 A 60.PF.. Series TJ = 25 °C 10 000 8000 IFM = 30 A 6000 IFM = 10 A 4000 IFM = 5 A 2000 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1200 25 000 Qrr - Typical Reverse Recovery Charge (µC) 60.PF.. Series TJ = 150 °C 1000 trr - Typical Reverse Recovery Time (ns) 40 800 IFM = 60 A 600 IFM = 30 A 400 IFM = 10 A 200 IFM = 5 A IFM = 1 A 60.PF.. Series TJ = 150 °C 20 000 IFM = 60 A 15 000 IFM = 30 A 10 000 IFM = 10 A 5000 IFM = 5 A IFM = 1 A 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 29-Nov-2019 Document Number: 93721 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors 60 45 60.PF.. Series TJ = 25 °C 50 35 IFM = 30 A 30 25 IFM = 10 A 20 15 IFM = 5 A 10 IFM = 30 A 40 IFM = 10 A 30 20 IFM = 5 A 10 IFM = 1 A IFM = 1 A 5 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (°C/W) IFM = 60 A 60.PF.. Series TJ = 150 °C IFM = 60 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 40 Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 0.01 0.001 0.0001 Single pulse 0.001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 60.PF.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 93721 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins 4 - Package: P = TO-247AC 3L /TO-247AC 2L 5 - Type of silicon: F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60EPF10-M3 25 500 Antistatic plastic tubes VS-60APF10-M3 25 500 Antistatic plastic tubes VS-60EPF12-M3 25 500 Antistatic plastic tubes VS-60APF12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?95648 TO-247AC 3L www.vishay.com/doc?95007 Revision: 29-Nov-2019 Document Number: 93721 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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