VS-70HF(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 70 A
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
70 A
Package
DO-5 (DO-203AB)
Circuit configuration
Single
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
VRRM
140/160
UNITS
70
70
A
TC
140
110
°C
110
110
A
50 Hz
1200
1200
60 Hz
1250
1250
50 Hz
7100
7100
60 Hz
6450
6450
Range
100 to 1200
1400 to 1600
V
-65 to +180
-65 to +150
°C
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
IF(RMS)
IFSM
70HF(R)
10 TO 120
TJ
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-70HF(R)
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE VOLTAGE
V
10
100
200
200
20
200
300
300
30
300
400
400
40
400
500
500
60
600
720
725
80
800
960
950
100
1000
1200
1150
120
1200
1440
1350
140
1400
1650
1550
160
1600
1900
1750
15
9
4.5
Revision: 11-Jan-18
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VS-70HF(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
70HF(R)
TEST CONDITIONS
10 to 120 140/160
70
180° conduction, half sine wave
140
IF(RMS)
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
I2t
No voltage
reapplied
t = 8.3 ms
t = 10 ms
I2t
A
1250
A
1000
1050
Sinusoidal half wave,
initial TJ = TJ maximum
7100
6450
A2s
5000
100 % VRRM
reapplied
t = 8.3 ms
Maximum I2t for fusing
°C
1200
No voltage
reapplied
t = 10 ms
Maximum I2t for fusing
A
110
110
t = 10 ms
UNITS
4550
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
71 000
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.79
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.00
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
2.33
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
1.53
V
m
Maximum forward voltage drop
VFM
Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.35
1.46
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
70HF(R)
TEST CONDITIONS
10 to 120
TJ, TStg
140/160
-65 to +180 -65 to +150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.45
Thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Not lubricated thread, tighting on nut (1)
Not lubricated thread, tighting on hexagon
2.3 (20)
(2)
Lubricated thread, tighting on hexagon (2)
Approximate weight
Case style
°C
K/W
3.4 (30)
Lubricated thread, tighting on nut (1)
Maximum allowable mounting torque
(+0 %, -10 %)
UNITS
See dimensions - link at the end of datasheet
4.2 (37)
N·m
(lbf · in)
3.2 (28)
17
g
0.6
oz.
DO-5 (DO-203AB)
Notes
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.08
0.06
120°
0.10
0.11
90°
0.13
0.14
60°
0.19
0.20
30°
0.30
0.30
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93521
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VS-70HF(R) Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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180
70HF(R) series (100 V to 1200 V)
RthJC (DC) = 0.45 K/W
170
160
Conduction angle
150
140
90°
60°
120°
180°
30°
130
0
10
20
30
40
50
60
70
80
Average Forward Current (A)
150
70HF(R) series (1400 V to 1600 V)
RthJC (DC) = 0.45 K/W
140
130
Conduction angle
120
110
90°
60°
0
160
Conduction period
150
140
90°
120°
30°
180°
DC
120
0
20
40
60
80
100
120
Average Forward Current (A)
140
80
Conduction period
110
90°
100
60°
120°
30°
180°
DC
80
100
90
0
20
40
60
120
Average Forward Current (A)
=0
80
A
W
60
W
K/
40
W
K/
.3
W
2K
R thS
0.5
K/
W
K/
5
K/
/W
R
-Δ
Maximum Average Forward Power Loss (W)
70
120
7
1.
RMS limit
50
60
130
1
60
50
70HF(R) series (1400 V to 1600 V)
RthJC (DC) = 0.45 K/W
0.
70
40
Fig. 4 - Current Ratings Characteristics
180°
120°
90°
60°
30°
80
30
150
Fig. 2 - Current Ratings Characteristics
90
20
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
70HF(R) series (100 V to 1200 V)
RthJC (DC) = 0.45 K/W
60°
10
Fig. 3 - Current Ratings Characteristics
180
130
180°
100
Fig. 1 - Current Ratings Characteristics
170
120°
30°
3K
/W
4K
40
/W
Conduction angle
30
20
5 K/
W
70HF(R) series
(100 V to 1200 V)
TJ = 180 °C
10
0
0
10
20
30
40
50
60
Average Forward Current (A)
70
800
20
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93521
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VS-70HF(R) Series
Vishay Semiconductors
120
K/
W
3
0.
W
=
1.5
K/
K/
W
2K
/W
3K
/W
Conduction period
R
40
-Δ
RMS limit
W
60
7
K/
SA
80
0.
1
R th
100
/W
DC
180°
120°
90°
60°
30°
K
0.5
Maximum Average Forward Power Loss (W)
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5 K/W
70HF(R) series
(100 V to 1200 V)
TJ = 180 °C
20
0
0
20
40
60
80
100
0
120
Average Forward Current (A)
20
40
60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
90
R th
SA
W
W
=0
K/
K/
.3
K/
W
W
K/
R
-Δ
2K
RMS limit
50
K/
W
1.5
5
60
7
70
1
0.
180°
120°
90°
60°
30°
80
0.
Maximum Average Forward Power Loss (W)
Fig. 6 - Forward Power Loss Characteristics
/W
3K
/W
4K
/W
40
30
Conduction angle
20
70HF(R) series
(1400 V to 1600 V)
TJ = 150 °C
10
5 K/W
0
0
10
20
30
40
50
60
70
Average Forward Current (A)
0
80
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
120
0.
5
K/
W
1K
K/
W
3
/W
W
K/
R
-Δ
60
7
0.
80
0.
=
100
SA
DC
180°
120°
90°
60°
30°
R th
Maximum Average Forward Power Loss (W)
Fig. 7 - Forward Power Loss Characteristics
1.5
K/W
2K
/W
3K
/W
RMS limit
40
Conduction period
70HF(R) series
(1400 V to 1600 V)
TJ = 150 °C
20
5 K/
W
0
0
20
40
60
80
100
Average Forward Current (A)
0
120
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93521
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
1100
Vishay Semiconductors
900
Instantaneous Forward Current (A)
At any rated load condition and with rated VRRM
applied following surge.
Initial TJ = TJ max.
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
800
700
600
500
400
70HF(R) series
300
1
10
1000
100
TJ = 25 °C
10
TJ = TJ max.
70HF(R) series
1
0
100
0.5
1
1.5
2
2.5
3
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Forward Voltage Drop Characteristics
1200
ZthJC - Transient Thermal Impedance (K/W)
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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Maximum non repetitive surge current
vs. pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated VRRM reapplied
1100
1000
900
800
700
600
500
400
70HF(R) series
300
200
0.01
0.1
1
Pulse Train Duration (s)
Instantaneous Forward Current (A)
Fig. 10 - Maximum Non-Repetitive Surge Current
10
1
Steady state value
RthJC = 0.45 K/W
(DC operation)
0.1
0.01
70HF(R) series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
1000
TJ = 25 °C
TJ = TJ max.
100
10
70HF (R) series
(140 to 160)
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
70
HF
R
160
M
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
70 = standard device
71 = not isolated lead
72 = isolated lead with silicone sleeve
(red = reverse polarity)
(blue = normal polarity)
3
-
4
-
HF = standard diode
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A
M = stud base DO-5 (DO-203AB) M6 x 1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95343
Revision: 11-Jan-18
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Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 70HF(R) and 71HF(R) Series
DIMENSIONS FOR 70HF(R) SERIES in millimeters (inches)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
Document Number: 95343
Revision: 29-Sep-08
17.40 (0.68)
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Outline Dimensions
DO-203AB (DO-5) for 70HF(R)
and 71HF(R) Series
Vishay Semiconductors
DIMENSIONS FOR 71HF(R) SERIES in millimeters (inches)
12.2 (0.48) MAX.
Ø 7 (0.28) MAX.
134.4 (5.29)
MAX.
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2
123 (4.84)
MAX.
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Document Number: 95343
Revision: 29-Sep-08
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Document Number: 91000