VS-72HF120

VS-70HF(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 70 A FEATURES • High surge current capability • Designed for a wide range of applications • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V VRRM • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IF(AV) 70 A Package DO-5 (DO-203AB) Circuit configuration Single • Machine tool controls • Battery charges MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) I2t VRRM 140/160 UNITS 70 70 A TC 140 110 °C 110 110 A 50 Hz 1200 1200 60 Hz 1250 1250 50 Hz 7100 7100 60 Hz 6450 6450 Range 100 to 1200 1400 to 1600 V -65 to +180 -65 to +150 °C IRRM MAXIMUM AT TJ = TJ MAXIMUM mA IF(RMS) IFSM 70HF(R) 10 TO 120 TJ A A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-70HF(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VR(BR), MINIMUM AVALANCHE VOLTAGE V 10 100 200 200 20 200 300 300 30 300 400 400 40 400 500 500 60 600 720 725 80 800 960 950 100 1000 1200 1150 120 1200 1440 1350 140 1400 1650 1550 160 1600 1900 1750 15 9 4.5 Revision: 11-Jan-18 Document Number: 93521 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70HF(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) 70HF(R) TEST CONDITIONS 10 to 120 140/160 70 180° conduction, half sine wave 140 IF(RMS) Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms I2t No voltage reapplied t = 8.3 ms t = 10 ms I2t A 1250 A 1000 1050 Sinusoidal half wave, initial TJ = TJ maximum 7100 6450 A2s 5000 100 % VRRM reapplied t = 8.3 ms Maximum I2t for fusing °C 1200 No voltage reapplied t = 10 ms Maximum I2t for fusing A 110 110 t = 10 ms UNITS 4550 t = 0.1 ms to 10 ms, no voltage reapplied A2s 71 000 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.79 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 1.00 Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 2.33 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 1.53 V m Maximum forward voltage drop VFM Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.35 1.46 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range 70HF(R) TEST CONDITIONS 10 to 120 TJ, TStg 140/160 -65 to +180 -65 to +150 Maximum thermal resistance, junction to case RthJC DC operation 0.45 Thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25 Not lubricated thread, tighting on nut (1) Not lubricated thread, tighting on hexagon 2.3 (20) (2) Lubricated thread, tighting on hexagon (2) Approximate weight Case style °C K/W 3.4 (30) Lubricated thread, tighting on nut (1) Maximum allowable mounting torque (+0 %, -10 %) UNITS See dimensions - link at the end of datasheet 4.2 (37) N·m (lbf · in) 3.2 (28) 17 g 0.6 oz. DO-5 (DO-203AB) Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.08 0.06 120° 0.10 0.11 90° 0.13 0.14 60° 0.19 0.20 30° 0.30 0.30 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93521 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70HF(R) Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 180 70HF(R) series (100 V to 1200 V) RthJC (DC) = 0.45 K/W 170 160 Conduction angle 150 140 90° 60° 120° 180° 30° 130 0 10 20 30 40 50 60 70 80 Average Forward Current (A) 150 70HF(R) series (1400 V to 1600 V) RthJC (DC) = 0.45 K/W 140 130 Conduction angle 120 110 90° 60° 0 160 Conduction period 150 140 90° 120° 30° 180° DC 120 0 20 40 60 80 100 120 Average Forward Current (A) 140 80 Conduction period 110 90° 100 60° 120° 30° 180° DC 80 100 90 0 20 40 60 120 Average Forward Current (A) =0 80 A W 60 W K/ 40 W K/ .3 W 2K R thS 0.5 K/ W K/ 5 K/ /W R -Δ Maximum Average Forward Power Loss (W) 70 120 7 1. RMS limit 50 60 130 1 60 50 70HF(R) series (1400 V to 1600 V) RthJC (DC) = 0.45 K/W 0. 70 40 Fig. 4 - Current Ratings Characteristics 180° 120° 90° 60° 30° 80 30 150 Fig. 2 - Current Ratings Characteristics 90 20 Average Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 70HF(R) series (100 V to 1200 V) RthJC (DC) = 0.45 K/W 60° 10 Fig. 3 - Current Ratings Characteristics 180 130 180° 100 Fig. 1 - Current Ratings Characteristics 170 120° 30° 3K /W 4K 40 /W Conduction angle 30 20 5 K/ W 70HF(R) series (100 V to 1200 V) TJ = 180 °C 10 0 0 10 20 30 40 50 60 Average Forward Current (A) 70 800 20 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93521 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70HF(R) Series Vishay Semiconductors 120 K/ W 3 0. W = 1.5 K/ K/ W 2K /W 3K /W Conduction period R 40 -Δ RMS limit W 60 7 K/ SA 80 0. 1 R th 100 /W DC 180° 120° 90° 60° 30° K 0.5 Maximum Average Forward Power Loss (W) www.vishay.com 5 K/W 70HF(R) series (100 V to 1200 V) TJ = 180 °C 20 0 0 20 40 60 80 100 0 120 Average Forward Current (A) 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 90 R th SA W W =0 K/ K/ .3 K/ W W K/ R -Δ 2K RMS limit 50 K/ W 1.5 5 60 7 70 1 0. 180° 120° 90° 60° 30° 80 0. Maximum Average Forward Power Loss (W) Fig. 6 - Forward Power Loss Characteristics /W 3K /W 4K /W 40 30 Conduction angle 20 70HF(R) series (1400 V to 1600 V) TJ = 150 °C 10 5 K/W 0 0 10 20 30 40 50 60 70 Average Forward Current (A) 0 80 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 120 0. 5 K/ W 1K K/ W 3 /W W K/ R -Δ 60 7 0. 80 0. = 100 SA DC 180° 120° 90° 60° 30° R th Maximum Average Forward Power Loss (W) Fig. 7 - Forward Power Loss Characteristics 1.5 K/W 2K /W 3K /W RMS limit 40 Conduction period 70HF(R) series (1400 V to 1600 V) TJ = 150 °C 20 5 K/ W 0 0 20 40 60 80 100 Average Forward Current (A) 0 120 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 8 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93521 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70HF(R) Series 1100 Vishay Semiconductors 900 Instantaneous Forward Current (A) At any rated load condition and with rated VRRM applied following surge. Initial TJ = TJ max. at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1000 800 700 600 500 400 70HF(R) series 300 1 10 1000 100 TJ = 25 °C 10 TJ = TJ max. 70HF(R) series 1 0 100 0.5 1 1.5 2 2.5 3 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 11 - Forward Voltage Drop Characteristics 1200 ZthJC - Transient Thermal Impedance (K/W) Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com Maximum non repetitive surge current vs. pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated VRRM reapplied 1100 1000 900 800 700 600 500 400 70HF(R) series 300 200 0.01 0.1 1 Pulse Train Duration (s) Instantaneous Forward Current (A) Fig. 10 - Maximum Non-Repetitive Surge Current 10 1 Steady state value RthJC = 0.45 K/W (DC operation) 0.1 0.01 70HF(R) series 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristics 1000 TJ = 25 °C TJ = TJ max. 100 10 70HF (R) series (140 to 160) 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics Revision: 11-Jan-18 Document Number: 93521 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70HF(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 70 HF R 160 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - 70 = standard device 71 = not isolated lead 72 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity) 3 - 4 - HF = standard diode None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A M = stud base DO-5 (DO-203AB) M6 x 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95343 Revision: 11-Jan-18 Document Number: 93521 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 70HF(R) and 71HF(R) Series DIMENSIONS FOR 70HF(R) SERIES in millimeters (inches) Ø 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) Document Number: 95343 Revision: 29-Sep-08 17.40 (0.68) For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions DO-203AB (DO-5) for 70HF(R) and 71HF(R) Series Vishay Semiconductors DIMENSIONS FOR 71HF(R) SERIES in millimeters (inches) 12.2 (0.48) MAX. Ø 7 (0.28) MAX. 134.4 (5.29) MAX. www.vishay.com 2 123 (4.84) MAX. For technical questions, contact: indmodules@vishay.com Document Number: 95343 Revision: 29-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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