VS-80RIA80

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 80 A FEATURES • Hermetic glass-metal seal • International standard case TO-94 (TO-209AC) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-94 (TO-209AC) TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies PRIMARY CHARACTERISTICS • AC controllers IT(AV) 80 A VDRM/VRRM 400 V, 800 V, 1200 V VTM 1.60 V IGT 120 mA TJ -40 °C to +125 °C Package TO-94 (TO-209AC) Circuit configuration Single SCR        MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 80 A 85 °C 125 ITSM I2t 50 Hz 1900 60 Hz 1990 50 Hz 18 60 Hz 16 VDRM/VRRM tq Typical TJ A kA2s 400 to 1200 V 110 μs -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = 125 °C mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-80RIA VS-81RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 120 1200 1300 15 Revision: 27-Sep-17 Document Number: 94392 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2t for fusing I2t °C 125 1900 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage t = 10 ms 100 % VRRM  t = 8.3 ms reapplied 1990 1675 18 16 12.7 180.5 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.99 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 2.29 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 1.84 Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 11.7 t = 0.1 ms to 10 ms, no voltage reapplied VT(TO)1 Maximum holding current A 1600 Sinusoidal half wave, initial TJ = TJ maximum Low level value of threshold voltage Maximum on-state voltage UNITS 80 DC at 75 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 200 400 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 μF, 15 , gate pulse: 20 V, 65 , tp = 6 μs, tr = 0.5 μs Per JEDEC standard RS-397, 5.2.2.6. VALUES UNITS 300 A/μs Typical delay time td Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = -5 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate bias: 0 V 25 , tp = 500 μs 110 SYMBOL TEST CONDITIONS VALUES UNITS 1 μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = 125 °C exponential to 67 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = 125 °C rated VDRM/VRRM applied 15 mA Revision: 27-Sep-17 Document Number: 94392 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TEST CONDITIONS VALUES TJ = TJ maximum, tp  5 ms 12 TJ = TJ maximum, f = 50 Hz, d% = 50 3 3 TJ = TJ maximum, tp  5 ms 20 10 IGT TJ = 25 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 °C TJ = - 40 °C Maximum DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger VGD A V 120 mA 60 3.5 2.5 V 1.5 IGD DC gate voltage not to trigger W 270 TJ = - 40 °C Maximum DC gate current required to trigger UNITS Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied TJ = TJ maximum 6 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction  temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance,  junction to case RthJC DC operation 0.30 Maximum thermal resistance,  case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 °C K/W Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, ± 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet N·m (lbf · in) g TO-94 (TO-209AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.042 0.030 120° 0.050 0.052 90° 0.064 0.070 60° 0.095 0.100 30° 0.164 0.165 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94392 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduc tion Angle 100 30° 60° 90° 120° 90 180° 80 0 10 20 30 40 50 60 70 80 90 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduction Period 100 90 30° 80 120° 180° DC 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 120 e lt -D K/ W a R 1.4 K/ W RMSLimit 60 /W 4K 0. 70 1 = 80 A 90 W K/ 100 hS R t 180° 120° 90° 60° 30° 110 6 0. Maximum Average On-state Power Loss (W) 60° 90° 2K /W 50 40 Conduction Angle 3 K/ 30 20 10 W 5 K/ W 80RIA Series TJ = 125°C 0 0 10 20 30 40 50 60 70 80 0 Average On-state Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 180 DC 180° 120° 90° 60° 30° 160 140 120 R th SA 100 80 = 0. 6K /W 0. 4 K/ W -D e lt a 1K /W RMSLimit Conduc tion Period 60 40 80RIA Series TJ = 125°C 20 R 1.4 K/ W 2 K/ W 3 K/ W 5 K/ W 0 0 20 40 60 80 100 120 Average On-state Current (A) 140 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94392 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series 1800 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1600 1400 1200 1000 80RIA Series 800 1 10 100 2000 Maximum Non Repetitive Surge Current 1900 Versus Pulse Train Duration. Control 1800 Of Conduction May Not Be Maintained. Initial TJ = 125°C 1700 No Voltage Reapplied 1600 Rated VRRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA Series 800 700 0.01 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 100 TJ = 25°C TJ = 125°C 10 80RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) 1 Steady State Value R thJC = 0.30 K/W Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics (DC Operation) 0.1 0.01 80RIA Series 0.001 0.0001 0.001 0.01 0.1 1 10 Sq uare Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 27-Sep-17 Document Number: 94392 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr