VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
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Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Battery chargers
• Converters
PRIMARY CHARACTERISTICS
IF(AV)
85 A
Package
DO-5 (DO-203AB)
Circuit configuration
Single
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
85HF(R)
10 to 120
I2t
VRRM
UNITS
85
85
A
TC
140
110
°C
133
133
A
50 Hz
1700
1700
60 Hz
1800
1800
50 Hz
14 500
14 500
60 Hz
13 500
13 500
Range
100 to 1200
1400 to 1600
V
-65 to +180
-65 to +150
°C
IF(RMS)
IFSM
140 to 160
TJ
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-85HF(R)
VS-86HF(R)
VS-87HF(R)
VS-88HF(R)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
10
100
200
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
9
4.5
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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
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FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V, 1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V, 1600 V)
Maximum forward voltage drop
85
I2t
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
UNITS
A
110
133
t = 10 ms
I2t
140/160
140
IF(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
85HF(R)
10 to 120
°C
A
1700
1800
A
1450
1500
Sinusoidal half wave,
initial TJ = TJ maximum
14 500
13 500
100 % VRRM
reapplied
A2s
10 500
9400
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
16 000
0.68
VF(TO)
TJ = TJ maximum
V
0.69
1.62
rf
TJ = TJ maximum
mW
1.75
VFM
Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.2
1.4
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
SYMBOL
TEST CONDITIONS
TJ, TStg
85HF(R)
10 to 20
140 to 160
-65 to +180 -65 to +150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.35
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
UNITS
°C
K/W
Maximum shock (1)
1500
Maximum constant vibration (1)
50 Hz
Maximum constant acceleration (1)
Stud outwards
Maximum allowable mounting torque
+ 0 %, - 10 %
Lubricated thread, tighting on nut
2.3 (20)
Not lubricated thread, tighting on hexagon
4.2 (37)
Lubricated thread, tighting on hexagon
3.2 (28)
Not lubricated thread, tighting on nut
Approximate weight
Unleaded device
Case style
See dimensions - link at the end of datasheet
20
g
5000
3.4 (30)
N·m
(lbf · in)
17
g
0.6
oz.
DO-5 (DO-203AB)
Notes
(1) Available only for 88HF
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
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Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.10
0.08
120°
0.11
0.11
90°
0.13
0.13
60°
0.17
0.17
30°
0.26
0.26
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
1 80
85HF(R) Series 100 V to 1200 V
RthJC (DC) = 0.35 K/W
1 70
Conduction Angle
1 60
1 50
30°
60°
1 40
90°
150
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
85HF(R) Series (1400 V to 1600 V)
RthJC (DC) = 0.35 K/W
1 40
Conduction Angle
1 30
1 20
30°
60°
1 10
120°
180°
180°a
1 00
1 30
0
10
20
30
40
50
60
70
80
90
0
100
10
20
180
Maximum Allowable Case
Temperature (°C)
Conduction Period
150
30°
140
90°
120°
180°
50
60
70
80
90
100
150
170
60°
40
Fig. 3 - Current Ratings Characteristics
85HF(R) Series 100 V to 1200 V
RthJC (DC) = 0.35 K/W
160
30
Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
90°
120°
85HF(R) Series (1400 V to 1600 V)
RthJC (DC) = 0.35 K/W
140
Conduction Period
130
120
30°
60°
110
90°
120°
DC
180°
DC
100
130
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
IF(AV) - Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
140
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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
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180°
120°
90°
60°
30°
=0
A
hS
Rt
W
K/
7
0.
K/
60
80 100 120 140 160 180
W
2K
/W
.5
K/
W
60
5
W
70
1.
K/
80
1
RMS Limit
50
3K
a
elt
-D
/W
40
R
Maximum Average Forward
Power Loss (W)
90
5 K/
W
Conduction Angle
30
10 K/W
20
85HF(R) Series 100 V to 1200 V
Tj = 180˚C
10
0
0
10
20
30
40
50
60
70
80
20
90
IF(AV) - Average Forward Current (A)
40
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
A
60
80
=
W
K/
hS
Rt
7
/W
5
1.5
0.
K/
K/
W
W
80
K
100
0.
DC
180°
120°
90°
60°
30°
1
2K
-D
/W
a
60 RMS Limit
R
3K
/W
40
Conduction Period
5 K/W
10 K/W
85HF(R) Series 100 V to 1200 V
20
elt
Maximum Average Forward
Power Loss (W)
120
Tj = 180˚C
0
0
20
40
60
80
100
120
140
IF(AV) - Average Forward Current (A)
20
40
100
120 140 160 180
Maximum Allowable Ambient Temperature (°C)
100
=
W
W
SA
5
0.
K/
K/
W
W
-D
60
K/
R th
RMS Limit
2K
70
1
K/
1.5
80
7
180°
120°
90°
60°
30°
90
0.
/W
R
50
a
elt
Maximum Average Forward Power Loss (W)
Fig. 6 - Forward Power Loss Characteristics
3K
/W
40
Conduction Angle
30
20
85HF(R) Series (1400 V, 1600 V)
Tj = 150 ˚C
10
5 K/W
10 K/W
0
0
10
20
30
40
50
60
70
Average Forward Current (A)
80
90
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
Vishay Semiconductors
1 40
0.7
5
W
0.
K/
K
1K
=
1 00
SA
/W
DC
180°
120°
90°
60°
30°
1 20
R th
/W
ta
el
D
80
-
1.5
K/W
2 K/
W
RMS Limit
60
3 K/W
5 K/W
Conduction Period
40
85HF(R) Series
(1400 V, 1600 V)
Tj = 150 ˚C
20
R
Maximum Average Forward Power Loss (W)
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10 K/W
0
0
20
40
60
80
100
120
Average Forward Current (A)
140
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1600
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
800
600
85HF(R) Series
400
1
10
10 000
Tj = 25°C
Tj = Tj Max.
1000
100
85HF(R) Series
up to 1200 V
10
0
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
1600
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
1200
1000
800
600
400
200
0.01
85HF(R) Series
0.1
2
3
4
5
6
Fig. 11 - Forward Voltage Drop Characteristics
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 9 - Maximum Non-Repetitive Surge Current
1800
1
Instantaneous Forward Voltage (V)
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
1000
Tj = Tj Max.
100
Tj = 25 °C
10
85HF (R) Series
1
0
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400 V, 1600 V)
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VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
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ZthJC - Transient Thermal Impedance (K/W)
Vishay Semiconductors
10
Steady State Value
RthJC = 0.35 K/W
1
(DC Operation)
0.1
0.01
85HF(R) Series
0.001
0.0001
0.001
0.01
0.1
1
10
t - Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
85
HF
R
160
M
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
85 = standard device
86 = not isolated lead
87 = isolated lead with silicone sleeve
(red = Reverse polarity)
(blue = Normal polarity)
88 = type for rotating application
3
-
HF = standard diode
4
-
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A
M = stud base DO-5 (DO-203AB) M6 x 1 (not available for 88HF)
M8 = stud base DO-5 (DO-203AB) M8 x 1.25 (not available for 88HF)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95342
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Outline Dimensions
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Vishay Semiconductors
DO-5 (DO-203AB) for 85HF(R), 86HF(R) and 88HF(R)Series
DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)
Ø 15.1 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
For metric devices: M8 x 1.25
M6 x 1
1.20 (0.04)
17.35 (0.68)
Revision: 20-Nov-2018
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Outline Dimensions
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DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)
12.2 (0.48) MAX.
Ø 7 (0.28) MAX.
134.4 (5.29)
MAX.
123 (4.84)
MAX.
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Outline Dimensions
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Vishay Semiconductors
DIMENSIONS 88HF(R) SERIES in millimeters (inches)
Ø 15 (0.59)
8.3 (0.33) max.
10.8 (0.42)
11.4 (0.45)
5 (0.20) max.
4 (0.16) min.
3.8 (0.15)
11.1 ± 0.4
(0.44 ± 0.02)
25.4 (1) max.
7 (0.27)
17.35 (0.68)
2.15 (0.08)
1/4" 28 UNr - 2A
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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