VS-8DKH02-M3/I

VS-8DKH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® FEATURES 1 2 • Hyperfast recovery time, reduced Qrr, and soft recovery 3 4 8 • 175 °C maximum operating junction temperature • Specific for output and snubber operation 7 6 • Low forward voltage drop 5 • Low leakage current FlatPAK 5 x 6 • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C 1, 2 7, 8 3, 4 5, 6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. LINKS TO ADDITIONAL RESOURCES 3D 3D The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. 3D Models PRIMARY CHARACTERISTICS IF(AV) 2x4A VR 200 V VF at IF 0.7 V trr (typ.) 25 ns These devices are intended for use in snubber, boost, piezo-injection, as high frequency rectifiers, and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. TJ max. 175 °C Package FlatPAK 5 x 6 Circuit configuration Separated cathode MECHANICAL DATA Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002, meets JESD 201 class 2 whisker test ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current TEST CONDITIONS VRRM per device per device per diode Operating junction and storage temperatures IF(AV) IFSM VALUES UNITS 200 V TSolderpad = 170 °C, DC 8 TSolderpad = 169 °C, D = 0.5 A 173 TJ = 25 °C, 10 ms sinusoidal pulse 87 TJ, TStg -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 4 A - 0.87 0.96 IF = 4 A, TJ = 150 °C - 0.7 0.78 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - 7 80 VR = 200 V - 19 - IR = 100 μA UNITS V μA pF Revision: 29-Jan-2021 Document Number: 96090 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8DKH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 20 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 17 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr UNITS ns - 29 - - 2.1 - - 4 - TJ = 25 °C - 18 - TJ = 125 °C - 60 - MIN. TYP. MAX. UNITS °C TJ = 25 °C TJ = 125 °C IF = 4 A dIF/dt = 200 A/μs VR = 160 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -55 - 175 Thermal resistance, junction to ambient, per diode RthJA (1)(2) - 89 103 RthJM (3) - 1.8 2.1 Thermal resistance, junction to mount, per diode °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/ R D J thJA (2) Free air, mounted or recommended copper pad area; thermal resistance R thJA - junction to ambient (3) Mounted on infinite heatsink Revision: 29-Jan-2021 Document Number: 96090 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8DKH02-M3 Vishay Semiconductors 100 100 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Zth - Thermal Impedance (°C/W) 1000 Junction to ambient 100 10 Junction to case 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Jan-2021 Document Number: 96090 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8DKH02-M3 www.vishay.com Vishay Semiconductors 40 180 35 160 Tc = 170 °C RthJC = 1.8 °C/W 140 30 125 °C 120 trr (ns) Allowable Case Temperature (°C) 200 100 80 60 25 20 25 °C 15 Tc = 28 °C RthJA = 89 °C/W 40 10 20 0 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 100 5 90 RMS limit 4 80 3.5 70 3 60 2.5 Qrr (nC) Average Power Loss (W) 4.5 D = 0.01 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2 1.5 1 125 °C 50 25 °C 40 30 20 DC 10 0.5 0 0 0 1 2 3 4 5 100 6 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Jan-2021 Document Number: 96090 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8DKH02-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 D K H 02 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: D = separated cathode 4 - K = FlatPAK package 5 - Process type, 6 - Voltage code (02 = 200 V) 8 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyper fast recovery ORDERING INFORMATION (example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY VS-8DKH02-M3/H 0.10 H 1500 7"diameter plastic tape and reel VS-8DKH02-M3/I 0.10 I 6000 13"diameter plastic tape and reel PACKAGING DESCRIPTION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96056 Part marking information www.vishay.com/doc?96059 Packaging information www.vishay.com/doc?88869 Revision: 29-Jan-2021 Document Number: 96090 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors FlatPAK 5 x 6 (Dual) DIMENSIONS in inches (millimeters) 4 x L2 D D1 6xe 5 6 7 8 E2 (d1) E1 E 8xb 5 M 6 2 x b1 7 (E3) 8 F2 F1 F1 F2 4 3 4 Top View 2 1 D3 2 x D4 4 x L1 2 (8 x a) 1 3 (K) (2 x d2) D2 Bottom View 0.180 (4.56) 0.022 (0.56) Side View 0.055 (1.40) 0.191 (4.84) A c (8 x Θ) 0.259 (6.59) 0.082 (2.08) 0.030 (0.75) 0.039 (1.00) 0.219 (5.55) DIM. 0.050 (1.27) 0.030 (0.75) PCB Footprint INCHES MILLIMETERS MIN. NOM. MAX. MIN. NOM. MAX. A 0.035 0.039 0.043 0.89 0.99 1.09 (a) - 0.006 - - 0.15 - b 0.013 0.017 0.020 0.32 0.43 0.52 b1 0.013 0.017 0.020 0.32 0.43 0.52 c 0.008 - 0.014 0.20 - 0.35 D 0.197 0.203 0.209 5.00 5.15 5.30 D1 0.189 0.193 0.197 4.80 4.90 5.00 D2 0.154 0.161 0.169 3.90 4.10 4.30 D3 0.020 0.024 0.031 0.50 0.60 0.80 D4 0.063 0.069 0.075 1.60 1.75 1.90 (d1) - 0.016 - - 0.40 - (d2) - 0.005 - - 0.125 - E 0.238 0.244 0.250 6.05 6.20 6.35 Revision: 27-Mar-18 Document Number: 96056 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIM. Vishay Semiconductors INCHES MILLIMETERS MIN. NOM. MAX. MIN. NOM. MAX. E1 0.228 0.232 0.236 5.80 5.90 6.00 E2 0.157 0.165 0.173 4.00 4.20 4.40 (E3) - 0.144 - - 3.65 - e 0.050 BSC 1.27 BSC (K) 0.039 - - 1.00 - - L1 0.019 - 0.043 0.48 - 1.10 L2 0.012 - 0.031 0.30 - 0.80 M 0.128 0.138 0.148 3.25 3.50 3.75  0° - 10° 0° - 10° Notes • Dimensioning and tolerancing per ASME Y14.5-2009 • Dimensions D1 and E1 do not include mold flash or gate burrs • Dimension (XX) means reference only Revision: 27-Mar-18 Document Number: 96056 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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