VS-8EWF04STRL-M3

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance www.vishay.com/doc?99912 2 3 1 DPAK (TO-252AA) 1 Anode - 3 - Anode please see APPLICATIONS • Output rectification and freewheeling diode in inverters, choppers and converters PRIMARY CHARACTERISTICS IF(AV) 8A VR 200 V, 400 V, 600 V • Input rectifications where severe conducted EMI should be met restrictions on VF at IF 1.2 V IFSM 150 A DESCRIPTION trr 55 ns TJ max. 150 °C The VS-8EWF..S-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current. Snap factor 0.5 Package DPAK (TO-252AA) Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 8 A Sinusoidal waveform VRRM 200 to 600 V IFSM 150 A VF 8 A, TJ = 25 °C 1.2 V trr 1 A, 100 A/μs 55 ns TJ Range -40 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-8EWF02S-M3 200 300 VS-8EWF04S-M3 400 500 VS-8EWF06S-M3 600 700 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS TC = 96 °C, 180° conduction half sine wave VALUES UNITS 8 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A A2s A2√s Revision: 12-Apr-2018 Document Number: 93375 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VALUES UNITS 1.2 V 16 mΩ 1.13 V 0.1 VR = Rated VRRM TJ = 150 °C mA 3 RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 1 Apk 100 A/μs TJ = 25 °C IF at 8 Apk 25 A/μs TJ = 25 °C S VALUES UNITS 55 ns IFM trr 200 ta 2.6 A 0.25 μC tb t di dt Qrr Irr 0.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation VALUES UNITS -40 to +150 °C 2.5 °C/W RthJA (1) 50 1 g 0.03 oz. Approximate weight 8EWF02S Marking device Case style DPAK (TO-252AA) 8EWF04S 8EWF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 12-Apr-2018 Document Number: 93375 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 150 8EWF..SSeries R thJC (DC) = 2.5 °C/ W 140 130 120 Conduction Angle 110 100 90 30° 80 60° 90° 120° 180° 70 60 0 1 2 3 4 5 6 7 8 9 Maximum Average Forward Power Loss (W) Vishay Semiconductors 16 DC 180° 120° 90° 60° 30° 14 12 10 8 RMSLimit 6 Conduction Period 4 8EWF..SSeries TJ = 150°C 2 0 0 4 6 8 10 12 14 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 140 150 8EWF..S Series R thJC (DC) = 2.5 °C/ W 140 130 120 110 Conduction Period 100 30° 60° 90 90° 120° 180° 80 DC 2 4 6 8 10 120 110 100 90 80 70 60 50 VS-8EWF..S .. Series 40 30 70 0 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 130 12 1 14 Average Forward Current (A) Fig. 2 - Current Rating Characteristics 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 12 170 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 2 Average Forward Current (A) Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 180° 120° 90° 60° 30° 10 8 RMS Limit 6 4 Conduction Angle 2 8EWF..SSeries T J= 150°C 0 0 1 2 3 4 5 6 7 8 9 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics 150 130 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 110 90 70 50 30 10 0.01 VS-8EWF..S .. Series 0.1 1 Pulse Train Duration (s) 10 Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 12-Apr-2018 Document Number: 93375 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors 1.4 10 T J= 25°C TJ= 150°C 8EWF..SSeries 1 0.5 1 1.5 2 2.5 3 Typical Reverse Recovery Charge - Qrr (µC) Instantaneous Forward Current (A) 100 Fig. 7 - Forward Voltage Drop Characteristics 1 10 A 0.8 8A 0.6 5A 0.4 2A 1A 0.2 0 0 40 80 120 160 200 Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 2.4 8EWF..SSeries TJ = 25 °C 0.3 I FM = 20 A 0.2 10 A 8A 5A 0.1 2A 1A 0 0 40 80 120 160 200 Typical Reverse Recovery Charge - Qrr (µC) 0.4 Typical Reverse Recovery Time - Trr (µs) I FM = 20 A Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Instantaneous Forward Voltage (V) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C I FM = 20 A 8EWF..SSeries TJ = 150 °C 2.2 2 1.8 10 A 1.6 8A 1.4 1.2 5A 1 0.8 2A 0.6 0.4 1A 0.2 0 40 80 120 160 200 Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 16 8EWF..S Series TJ = 150 °C 0.3 I FM = 20 A 0.2 10 A 8A 5A 0.1 2A 1A 0 0 40 80 120 160 200 Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Typical Reverse Recovery Current - Irr (A) 0.4 Typical Re verse Recovery Time - Trr (µs) 8EWF..S Series TJ = 25 °C 1.2 8EWF..SSeries TJ = 25 °C 14 I FM = 20 A 10 A 12 8A 10 5A 8 2A 6 1A 4 2 0 0 40 80 120 160 200 Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 12-Apr-2018 Document Number: 93375 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors Typical Reverse Recovery Current - Irr (A) 20 I FM = 20 A 8EWF..SSeries TJ = 150 °C 18 16 10 A 14 8A 12 5A 10 2A 8 1A 6 4 2 0 0 40 80 120 160 200 Rate Of Fall Of Forward Current - dI/ dt (A/ µs) Transient Thermal Impedance Z thJC (°C/ W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady State Value (DC Operation) 1 D= D= D= D= D= 0.50 0.33 0.25 0.17 0.08 Single Pulse 8EWF..SSeries 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 12-Apr-2018 Document Number: 93375 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W F 06 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - TR = tape and reel 02 = 200 V 04 = 400 V 06 = 600 V TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8EWF02S-M3 75 3000 Antistatic plastic tubes VS-8EWF02STR-M3 2000 2000 13" diameter reel VS-8EWF02STRL-M3 3000 3000 13" diameter reel VS-8EWF02STRR-M3 3000 3000 13" diameter reel 75 3000 Antistatic plastic tubes VS-8EWF04STR-M3 2000 2000 13" diameter reel VS-8EWF04STRL-M3 3000 3000 13" diameter reel VS-8EWF04STRR-M3 3000 3000 13" diameter reel 75 3000 Antistatic plastic tubes VS-8EWF06STR-M3 2000 2000 13" diameter reel VS-8EWF06STRL-M3 3000 3000 13" diameter reel VS-8EWF06STRR-M3 3000 3000 13" diameter reel VS-8EWF04S-M3 VS-8EWF06S-M3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95551 Revision: 12-Apr-2018 Document Number: 93375 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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