VS-8EWS10SPBF

VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Meets MSL level 1, per LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 DPAK (TO-252AA) J-STD-020, 1 Anode - 3 - Anode APPLICATIONS • Output rectification and freewheeling diode in inverters, choppers and converters PRIMARY CHARACTERISTICS IF(AV) 8A VR 1000 V, 1200 V VF at IF 1.3 V IFSM 150 A trr 80 ns TJ max. 150 °C • Input rectifications where severe conducted EMI should be met restrictions on DESCRIPTION The VS-8EWF..S-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current. Snap factor 0.6 Package DPAK (TO-252AA) Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 8 A VRRM 1000/1200 V IFSM 150 A VF 8 A, TJ = 25 °C 1.3 V trr 1 A, 100 A/μs 80 ns TJ Range -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-8EWF10S-M3 VS-8EWF12S-M3 1000 1200 1100 1300 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS TC = 96 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 8 125 150 78 110 1100 UNITS A A2s A2√s Revision: 09-Aug-2022 Document Number: 93377 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS VALUES 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.3 V 25.6 mΩ 0.93 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 8 Apk 25 A/μs TJ = 25 °C S VALUES UNITS 270 ns 4.2 A 1 μC IFM trr ta tb t di dt 0.6 Qrr Irr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -40 to +150 °C 2.5 °C/W RthJA (1) 50 Approximate weight Marking device VALUES Case style DPAK (TO-252AA) 1 g 0.03 oz. 8EWF10S 8EWF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 09-Aug-2022 Document Number: 93377 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors 18 8EWF.. S Series RthJC (DC) = 2.5 °C/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 120 Ø Conduction angle 110 100 90 30° 80 120° 60° 70 90° 12 RMS limit 10 8 6 Ø Conduction period 4 8EWF..S Series TJ = 150 °C 2 0 0 1 3 2 4 5 7 6 8 9 2 0 4 6 10 8 12 14 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 140 150 8EWF..S Series RthJC (DC) = 2.5 °C/W 140 120 130 120 110 Ø 100 Conduction period 90 30° 60° 80 120° 6 4 80 70 60 10 8 VS-8EWF..S .. Series 12 14 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 170 180° 120° 90° 60° 30° 10 8 150 Peak Half Sine Wave Forward Current (A) 12 RMS limit 6 Ø 4 Conduction angle 2 8EWF..S Series TJ = 150 °C 1 2 3 4 5 6 7 8 130 9 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 110 90 70 50 30 0 0 90 30 60 2 100 40 DC 180° 0 110 50 90° 70 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 14 180° 60 Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 16 10 0.01 VS-8EWF..S .. Series 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 09-Aug-2022 Document Number: 93377 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series Vishay Semiconductors 2.0 1000 8EWF..S Series TJ = 25 °C TJ = 25 °C TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com 100 10 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 5 8EWF..S Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 8EWF..S Series TJ = 25 °C 0.5 trr - Typical Reverse Recovery Time (µs) IFM = 8 A 1.2 8EWF..S Series 1 0.5 0.6 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.3 0.2 0.1 4 IFM = 10 A 3 IFM = 8 A IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 0 40 80 120 160 0 200 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 20 0.8 8EWF..S Series TJ = 150 °C IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.6 0.4 Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (µs) IFM = 10 A 1.6 0.2 8EWF..S Series TJ = 25 °C 16 IFM = 10 A IFM = 8 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 09-Aug-2022 Document Number: 93377 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors 25 8EWF..S Series TJ = 150 °C Irr - Typical Reverse Recovery Current (A) 20 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 15 10 5 0 0 40 120 80 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 8EWF..S Series 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 09-Aug-2022 Document Number: 93377 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W F 12 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - TR = tape and reel 10 = 1000 V 12 = 1200 V TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWF10S-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tubes VS-8EWF10STR-M3 2000 2000 13" diameter reel VS-8EWF10STRL-M3 3000 3000 13" diameter reel VS-8EWF10STRR-M3 3000 3000 13" diameter reel 75 3000 Antistatic plastic tubes VS-8EWF12STR-M3 2000 2000 13" diameter reel VS-8EWF12STRL-M3 3000 3000 13" diameter reel VS-8EWF12STRR-M3 3000 3000 13" diameter reel VS-8EWF12S-M3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?97057 Revision: 09-Aug-2022 Document Number: 93377 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000