VS-8EWS16STRR-M3

VS-8EWS16S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 8 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 DPAK (TO-252AA) 1 Anode - 3 - Anode APPLICATIONS • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRIMARY CHARACTERISTICS IF(AV) 8A VR 1600 V VF at IF 1.1 V IFSM 150 A DESCRIPTION The VS-8EWS16S-M3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. TJ max. 150 °C Package DPAK (TO-252AA) Circuit configuration Single The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper UNITS 1.2 1.6 Aluminum IMS, RthCA = 15 °C/W 2.5 2.8 Aluminum IMS with heatsink, RthCA = 5 °C/W 5.5 6.5 CHARACTERISTICS VALUES UNITS 8 A A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM 1600 V IFSM 150 A VF 8 A, TJ = 25 °C TJ 1.10 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-8EWS16S-M3 1600 1700 0.5 Revision: 26-Oct-2021 Document Number: 93384 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS16S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 105 °C, 180° conduction half sine wave IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t VALUES UNITS 8 A 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2√s VALUES UNITS 1.1 V 20 mΩ 0.82 V A2s ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -40 to +150 °C 2.5 °C/W RthJA (1) 62 1 Approximate weight Marking device VALUES g 0.03 Case style DPAK (TO-252AA) oz. 8EWS16S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 26-Oct-2021 Document Number: 93384 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS16S-M3 Series www.vishay.com Vishay Semiconductors 20 8EWS. Series RthJC (DC) = 2.5 °C/W 140 130 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° 180° 0 2 4 6 8 10 14 12 RMS limit 10 8 Ø 6 Conduction period 4 8EWS. Series TJ = 150 °C 2 0 12 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 140 150 8EWS. Series RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction period 120 110 30° 60° 100 90° 120° 180° 2 4 6 8 10 12 14 16 120 110 100 90 80 70 60 50 VS-8EWS16S .. Series 40 DC 30 90 0 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 16 0 80 1 18 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 160 16 180° 120° 90° 60° 30° 14 12 140 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 18 10 RMS limit 8 6 Ø Conduction angle 4 8EWS. Series TJ = 150 °C 2 2 4 6 8 100 80 60 40 20 0 0 120 10 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 0 0.01 VS-8EWS16S .. Series 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Oct-2021 Document Number: 93384 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS16S-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 100 TJ = 25 °C TJ = 150 °C 10 8EWS. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 8EWS. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 26-Oct-2021 Document Number: 93384 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS16S-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W S 16 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM (16 = 1600 V) 7 - S = surface mountable 8 - TR = tape and reel TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWS16S-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tubes 75 3000 VS-8EWS16STR-M3 2000 2000 13" diameter reel VS-8EWS16STRL-M3 3000 3000 13" diameter reel VS-8EWS16STRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?96960 Revision: 26-Oct-2021 Document Number: 93384 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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