VS-C20ET07T-M3
www.vishay.com
Vishay Semiconductors
650 V Power SiC Merged PIN Schottky Diode, 20 A
Base cathode
2
2
1
3
3
Anode
1
Cathode
2L TO-220AC
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Models
Application
Notes
PRIMARY CHARACTERISTICS
FEATURES
• Majority carrier diode using Schottky technology
on SiC wide band gap material
• Positive VF temperature coefficient for easy
paralleling
•
•
•
•
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current
surge events
• Meets JESD 201 class 1A whisker test
• Solder Bath temperature 275 °C maximum, 10 s per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
IF(AV)
20 A
VR
650 V
VF at IF at 150 °C
1.6 V
TJ max.
175 °C
IR at VR at 175 °C
35 μA
QC (VR = 400 V)
68 nC
Package
2L TO-220AC
Circuit configuration
Single
Wide band gap SiC based 650 V Schottky diode, designed
for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
MECHANICAL DATA
Case: 2L TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Mounting torque: 10 in-lbs maximum
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
DC blocking voltage
VDC
Repetitive peak surge current
IFRM
Non-repetitive peak forward surge current
IFSM
Power dissipation
Ptot (1)
I2t value
i
Operating junction and storage temperatures
2
dt
TEST CONDITIONS
TC = 125 °C (DC)
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %
VALUES
V
20
A
650
V
75
TC = 25 °C, tp = 10 ms, half sine wave
160
TC = 110 °C, tp = 10 ms, half sine wave
140
TC = 25 °C
119
TC = 110 °C
52
TC = 25 °C
128
TC = 110 °C
98
TJ (2), TStg
UNITS
650
-55 to +175
A
W
A2s
°C
Notes
(1) Based on maximum R
th
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA
Revision: 16-Apr-2021
Document Number: 96726
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C20ET07T-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Forward voltage
TEST CONDITIONS
VF
Reverse leakage current
IR
Total capacitance
C
Total capacitive charge
QC
MIN.
TYP.
MAX.
IF = 20 A
-
1.45
1.70
IF = 20 A, TJ = 150 °C
-
1.60
1.90
IF = 20 A, TJ = 175 °C
-
1.65
-
UNITS
V
VR = VR rated
-
-
100
VR = VR rated, TJ = 150 °C
-
-
250
VR = VR rated, TJ = 175 °C
-
35
-
VR = 1 V, f = 1 MHz
-
1050
-
VR = 400 V, f = 1 MHz
-
105
-
VR = 400 V, f = 1 MHz
-
68
-
nC
MIN.
TYP.
MAX.
UNITS
-
0.9
1.3
°C/W
μA
pF
THERMAL - MECHANICAL SPECIFICATIONS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Thermal resistance, junction-to-case
TEST CONDITIONS
RthJC
Marking device
C20ET07T
Axis Title
Axis Title
10000
25
1000
TJ = -55 °C
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
20
15
100
10
5
10
0
0
0.5
1.0
1.5
2.0
2.5
1000
1000
100
100
1st line
2nd line
TJ = 25 °C
2nd line
CT - Junction Capacitance (pF)
35
30
10000
10 000
1st line
2nd line
TJ = 25 °C
f = 1.0 MHz
10
0.1
3.0
10
100
10
1000
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Axis Title
Axis Title
10000
100
1000
10000
10
TJ = 25 °C
1000
TJ = 150 °C
0.1
1000
2nd line
IFSM (A)
TJ = 175 °C
1
1st line
2nd line
2nd line
IR - Reverse Current (µA)
1
TJ = 110 °C
1st line
2nd line
2nd line
IF - Instantaneous Forward Current (A)
40
100
100
100
TJ = 125 °C
TJ = 25 °C
TJ = -55 °C
0.01
10
0.001
0
100
200
300
400
500
600
700
10
0.0001
0.001
10
0.01
VR - Reverse Voltage (V)
tp (s)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 4 - Non-Repetitive Peak Forward Surge Current vs.
Pulse Duration (Square Wave)
Revision: 16-Apr-2021
Document Number: 96726
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C20ET07T-M3
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Vishay Semiconductors
Axis Title
10000
1000
1st line
2nd line
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.00001
0.0001
100
10
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Typical Thermal Impedance ZthJC Characteristics
Axis Title
Axis Title
10000
10000
30
150
100
100
75
50
1000
20
1st line
2nd line
1000
125
2nd line
Capacitive Energy (µJ)
25
1st line
2nd line
2nd line
Allowable Case Temperature (°C)
175
15
100
10
TJ = 25 °C
f = 1.0 MHz
5
10
25
0
5
10
15
20
10
0
25
0
100
200
300
400
500
600
700
IF(AV) - Average Forward Output Current (A)
Reverse Voltage (V)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage
Axis Title
Axis Title
10000
180
10000
100
RthJC typ.
100
80
60
100
RthJC max.
40
1000
60
1st line
2nd line
1000
120
2nd line
Capacitive Charge (nC)
80
140
1st line
2nd line
2nd line
Allowable Input Power (W)
160
40
100
TJ = 25 °C
f = 1.0 MHz
20
20
10
0
25
50
75
100
125
150
175
10
0
0
100
200
300
400
500
600
700
Case Temperature (°C)
Reverse Voltage (V)
Fig. 7 - Forward Power Loss Characteristics
Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage
Revision: 16-Apr-2021
Document Number: 96726
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C20ET07T-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
C
20
E
T
07
T
-M3
1
2
3
4
5
6
7
8
1
-
2
-
C = SiC diode
3
-
Current rating (20 = 20 A)
4
-
E = single diode
5
-
Package TO-220
6
-
Voltage rating: (07 = 650 V)
7
-
T = true 2 pin
8
-
Environmental digit:
Vishay Semiconductors product
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-C20ET07T-M3
50/tube
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96069
Part marking information
www.vishay.com/doc?95391
SPICE model
www.vishay.com/doc?96834
Revision: 16-Apr-2021
Document Number: 96726
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 09-Jul-2021
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Document Number: 91000