VS-ETU1506-M3

VS-ETU1506-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt® FEATURES Base cathode 2 2 • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 1 3 1 Cathode • True 2 pin package 3 Anode • Designed and qualified according to JEDEC®-JESD 47 TO-220AC 2L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.1 V trr (typ.) 24 ns TJ max. 175 °C Package TO-220AC 2L Circuit configuration Single DESCRIPTION State of the art, ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 151 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 160 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.35 1.9 1.3 IR = 100 μA IF = 15 A, TJ = 150 °C - 1.1 VR = VR rated - 0.01 15 TJ = 150 °C, VR = VR rated - 20 200 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 13-Jan-2022 Document Number: 96635 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 24 28 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 36 47 TJ = 25 °C - 40 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr Reverse recovery time trr Peak recovery current IRRM - 87 - - 5 - - 9 - TJ = 25 °C - 107 - TJ = 125 °C - 430 - TJ = 25 °C TJ = 125 °C IF = 15 A, dIF/dt = 200 A/μs, VR = 390 V UNITS ns A nC - 53 - - 25 - A - 730 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 1.2 1.4 Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge TJ = 125 °C Qrr IF = 15 A, dIF/dt = 800 A/μs, VR = 390 V ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style TO-220AC 2L °C/W ETU1506 Revision: 13-Jan-2022 Document Number: 96635 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3 Vishay Semiconductors 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 175 °C 100 150 °C 125 °C 10 100 °C 1 75 °C 0.1 50 °C 25 °C 0.01 0.001 0.0001 1 0.5 1.0 1.5 2.0 0 2.5 100 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.5 D = 0.2 0.1 0.01 1E-05 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 13-Jan-2022 Document Number: 96635 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3 www.vishay.com Vishay Semiconductors 120 110 100 170 90 IF = 15 A, 125 °C 80 160 DC trr (ns) Allowable Case Temperature (°C) 180 150 70 60 50 IF = 15 A, 25 °C 40 140 30 typical value 20 130 0 2 4 6 8 10 12 14 10 100 16 1000 IF(AV) - Average Forward Current (A) dIFdt (A/µs) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 900 800 RMS Limit 25 700 IF = 15 A, 125 °C 600 20 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 15 10 5 Qrr (nC) Average Power Loss (W) 30 500 400 300 IF = 15 A, 25 °C 200 100 typical value 0 0 0 5 10 15 20 100 25 1000 IF(AV) - Average Forward Current (A) dIFdt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 13-Jan-2022 Document Number: 96635 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 15 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - T = 2L TO-220AC 4 - U = hyperfast recovery time 5 - Current code: 15 = 15 A 6 - Voltage code: 06 = 600 V 7 - Environmental digit: E = single -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-ETU1506-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96130 Revision: 13-Jan-2022 Document Number: 96635 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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