VS-ETU1506S-M3

VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors Ultra Fast Rectifier, 15 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature 2 • Low leakage current 1 • Designed and qualified according to JEDEC®-JESD 47 1 3 D2PAK (TO-263AB) 2 3 TO-262AA • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode 2 DESCRIPTION 3 Anode 1 N/C 3 Anode 1 N/C VS-ETU1506S-M3 State of the art, ultralow VF, soft-switching ultrafast rectifiers optimized for discontinuous (critical) mode (DCM) power factor correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. VS-ETU1506-1-M3 PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.1 V trr (typ.) 24 ns TJ max. Package The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies. 175 °C D2PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 143 °C 15 Non-repetitive peak surge current IFSM TC = 25 °C 160 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 15 A MIN. TYP. MAX. 600 - - - 1.35 1.9 1.3 IF = 15 A, TJ = 150 °C - 1.1 VR = VR rated - 0.01 15 TJ = 150 °C, VR = VR rated - 20 200 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 25-Oct-17 Document Number: 96334 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 24 28 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 36 47 TJ = 25 °C - 40 - TJ = 125 °C UNITS ns - 87 - - 5 - - 9.0 - - 107 - - 430 - - 53 - - 25 - A - 730 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 1.3 1.51 °C/W Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Thermal resistance, case-to-heat sink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 15 A dIF/dt = 200 A/μs VR = 390 V TJ = 125 °C TJ = 125 °C Qrr IF = 15 A dIF/dt = 800 A/μs VR = 390 V A C ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Case style D2PAK (TO-263AB) ETU1506S Case style TO-262 ETU1506-1 100 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 1 0.5 175 °C 100 150 °C 10 125 °C 1 100 °C 75 °C 0.1 50 °C 0.01 25 °C 0.001 0.0001 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96334 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.5 D = 0.2 D = 0.1 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) 180 30 170 25 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 160 150 DC 140 130 RMS Limit 20 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 15 10 5 0 120 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 25-Oct-17 Document Number: 96334 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors 120 900 110 800 100 90 700 IF = 15 A, 125 °C Qrr (nC) trr (ns) 70 60 50 500 400 300 40 30 IF = 15 A, 125 °C 600 80 IF = 15 A, 25 °C 200 IF = 15 A, 25 °C 20 10 typical value 10 100 typical value 0 100 1000 1000 dIFdt (A/μs) dIFdt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 25-Oct-17 Document Number: 96334 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 15 06 S 1 2 3 4 5 6 7 TRL -M3 8 9 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single diode T = TO-220 4 - U = ultrafast recovery time 5 - Current code (15 = 15 A) 6 - Voltage code (06 = 600 V) 7 - • S = D2PAK (TO-263AB) - • -1 = TO-262AA - • None = tube (50 pieces) - • TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) - • TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 8 9 ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY VS-ETU1506S-M3 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-ETU1506-1-M3 50 1000 Antistatic plastic tube VS-ETU1506STRR-M3 800 800 13" diameter reel VS-ETU1506STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 D2PAK (TO-263AB) www.vishay.com/doc?96424 www.vishay.com/doc?96132 Revision: 25-Oct-17 Document Number: 96334 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262AA DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.) Revision: 30-Nov-17 Document Number: 96165 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000