VS-GT400TH120N

VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V TYPICAL APPLICATIONS IC at TC = 80 °C 400 A • UPS VCE(on) (typical) at IC = 400 A, 25 °C 1.70 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge • Inverter for motor drive • AC and DC servo drive amplifier DESCRIPTION Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 600 TC = 80 °C 400 tp = 1 ms 800 TC = 80 °C 400 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 800 Maximum power dissipation PD TJ = 150 °C 2119 W Short circuit withstand time tSC TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 12-Jun-15 Document Number: 94748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.70 2.15 VGE = 15 V, IC = 400 A, TJ = 125 °C - 2.0 - 5.0 5.8 6.5 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 16 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 250 - tr - 39 - - 500 - td(off) TEST CONDITIONS VCC = 600 V, IC = 400 A, Rg = 1.8 , VGE = ± 15 V, TJ = 25 °C - 100 - Turn-on switching loss Eon - 17.0 - Turn-off switching loss Eoff - 42.0 - Turn-on delay time td(on) - 299 - tr - 46 - - 605 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 400 A, Rg = 1.8 , VGE = ± 15 V, TJ = 125 °C - 155 - Turn-on switching loss Eon - 25.1 - Turn-off switching loss Eoff - 61.9 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc  10 μs, VGE = 15 V, TJ = 125 °C,  VCC = 600 V, VCEM  1200 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 28.8 - - 1.51 - - 1.31 - - 1600 - A - 1.9 -  - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 400 A IF = 400 A, VR = 600 V, dI/dt = -6000 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.65 2.15 TJ = 125 °C - 1.65 - TJ = 25 °C - 44 - TJ = 125 °C - 78 - TJ = 25 °C - 490 - TJ = 125 °C - 555 - TJ = 25 °C - 19.0 - TJ = 125 °C - 35.1 - V μC A mJ Revision: 12-Jun-15 Document Number: 94748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG -40 - 125 - - 0.059 - - 0.106 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight 300 g 150 800 700 VCC = 600 V Rg = 1.8 Ω VGE = ± 15 V TJ = 125 °C 125 600 Eon, Eoff (mJ) 25 °C 500 IC (A) UNITS 125 °C 400 300 100 Eoff 75 50 200 25 100 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 800 200 VCC = 600 V IC = 400 A VGE = ± 15 V TJ = 125 °C VCE = 20 V 700 160 500 Eon, Eoff (mJ) 600 IC (A) Eon VGE = 15 V 25 °C 400 300 125 °C 120 Eon 80 Eoff 200 40 100 0 0 4 5 6 7 8 9 10 11 12 0 3 6 9 12 15 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - Switching Loss vs. Pg 18 Revision: 12-Jun-15 Document Number: 94748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH120N www.vishay.com Vishay Semiconductors 1000 800 IC (A) IC, module 600 400 Rg = 1.8 Ω VGE = ± 15 V TJ = 125 °C 200 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 0.1 ZthJC (K/W) IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 60 800 700 50 600 25 °C 40 E (mJ) IF (A) 500 400 300 Erec 30 20 200 VCC = 600 V Rg = 1.8 Ω VGE = - 15 V TJ = 125 °C 125 °C 10 100 0 0 0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 VF (V) IF (A) Fig. 7 - Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 800 Revision: 12-Jun-15 Document Number: 94748 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT400TH120N www.vishay.com Vishay Semiconductors 40 35 30 Erec E (mJ) 25 20 15 10 VCC = 600 V IF = 400 A VGE = - 15 V TJ = 125 °C 5 0 0 3 6 9 12 15 18 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95538 Revision: 12-Jun-15 Document Number: 94748 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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