VS-HFA08SD60STR-M3

VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES 2, 4 • Ultrafast recovery time • Ultrasoft recovery • Very low IRRM 1 N/C TO-252AA (D-PAK) • Very low Qrr 3 Anode • Guaranteed avalanche • Specified at operating conditions • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS Package TO-252AA (D-PAK) IF(AV) 8A VR 600 V VF at IF 1.4 V trr typ. 18 ns TJ max. 150 °C Diode variation Single die • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VALUES UNITS 600 V VRRM Maximum continuous forward current IF TC = 100 °C 8 Single pulse forward current IFSM 60 Peak repetitive forward current IFRM 24 Maximum power dissipation PD Operating junction and storage temperature range TC = 100 °C TJ, TStg A 14 W -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage,  blocking voltage SYMBOL VBR, VR TEST CONDITIONS IR = 100 μA IF = 8 A Forward voltage VF IF = 16 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 1.7 UNITS V IF = 8 A, TJ = 125 °C - 1.4 VR = VR rated - 0.3 5.0 TJ = 125 °C, VR = 0.8 x VR rated - 100 500 - 10 25 pF - 8.0 - nH Maximum reverse  leakage current IR Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body See fig. 3 μA Revision: 24-Nov-16 Document Number: 93474 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 - TJ = 25 °C - 37 55 UNITS ns TJ = 125 °C - 55 90 TJ = 25 °C - 3.5 5.0 - 4.5 8.0 - 65 138 TJ = 125 °C - 124 360 TJ = 25 °C - 240 - TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 °C Thermal resistance, junction to case RthJC - - 3.5 Thermal resistance, junction to ambient RthJA - - 80 - 2.0 - g - 0.07 - oz. Peak recovery current Reverse recovery charge Rate of fall of recovery current IRRM Qrr dI(rec)M/dt IF = 8 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C TJ = 25 °C A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS °C/W Typical socket mount Weight Marking device Case style TO-252AA (D-PAK) HFA08SD60S Revision: 24-Nov-16 Document Number: 93474 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08SD60S-M3 Vishay Semiconductors 1000 100 TJ = 150 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.4 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0.8 1.6 3.2 2.4 0 4.0 100 300 200 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 24-Nov-16 Document Number: 93474 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors 80 500 IF = 16 A IF = 8 A IF = 4 A 70 400 Qrr (nC) trr (ns) 60 VR = 200 V TJ = 125 °C TJ = 25 °C 50 40 IF = 16 A IF = 8 A IF = 4 A 300 200 30 20 100 VR = 200 V TJ = 125 °C TJ = 25 °C 10 100 0 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 10 000 20 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 15 IRR (A) 1000 10 1000 IF = 16 A IF = 8 A IF = 4 A 5 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 24-Nov-16 Document Number: 93474 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 24-Nov-16 Document Number: 93474 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 08 SD 60 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (08 = 8 A) 5 - D-PAK 6 - Voltage rating (60 = 600 V) 7 - S = D-PAK 8 - TR = tape and reel R = tape and reel (right oriented) L = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA08SD60S-M3 VS-HFA08SD60STR-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube 2000 2000 13" diameter reel VS-HFA08SD60SL-M3 3000 3000 13" diameter reel VS-HFA08SD60SR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 Revision: 24-Nov-16 Document Number: 93474 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000