VS-MBRB1035TRL-M3

VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode 2 • 150 °C TJ operation • TO-220 and D2PAK packages • Low forward voltage drop • High frequency operation 2 1 3 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode 1 N/C • Guard ring for enhanced ruggedness and long term reliability D2PAK (TO-263AB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C PRIMARY CHARACTERISTICS • Designed and qualified according to JEDEC®-JESD 47 IF(AV) 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C TJ max. 150 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 EAS 8 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IF(AV) Rectangular waveform 10 IFRM TC = 135 °C 20 VRRM UNITS A 35/45 V A IFSM tp = 5 μs sine 1060 VF 10 Apk, TJ = 125 °C 0.57 V TJ Range -65 to +150 C° VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-MBRB1035-M3 VS-MBRB1045-M3 UNITS 35 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 135 °C, rated VR 10 Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20 5 μs sine or 3 μs rect. pulse Non-repetitive surge current IFSM Following any rated load condition and with rated VRRM applied Surge applied at rated load conditions halfwave, single phase, 60 Hz Non-repetitive avalanche energy Repetitive avalanche current 1060 UNITS A 150 EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Revision: 21-Dec-2021 Document Number: 96393 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop VFM (1) TJ = 25 °C 10 A TJ = 125 °C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured from top of terminal to mounting plane Rated VR VALUES UNITS 0.84 0.57 V 0.72 0.1 mA 15 0.354 V 17.6 mΩ 600 pF 8.0 nH 10 000 V/μs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range TStg -65 to 175 Maximum thermal resistance, junction to case RthJC DC operation 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased (Only for TO-220) 0.50 Marking device °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque °C Case style D2PAK (TO-263AB) MBRB1035 MBRB1045 Revision: 21-Dec-2021 Document Number: 96393 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.4 1.2 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 21-Dec-2021 Document Number: 96393 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors 10 150 145 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 140 135 Square wave (D = 0.50) Rated VR applied 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 RMS limit 6 4 DC 2 See note (1) 0 120 0 3 6 9 12 0 15 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 21-Dec-2021 Document Number: 96393 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 2 1 B 10 45 3 4 5 TRL -M3 6 1 - Vishay Semiconductors product 2 - Essential part number 3 - B = surface mount 4 - Current rating (10 = 10 A) 5 - Voltage ratings 6 - 7 35 = 35 V 45 = 45 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 7 - -M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY VS-MBRB1035-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-MBRB1035TRL-M3 800 13" diameter plastic tape and reel VS-MBRB1035TRR-M3 800 13" diameter plastic tape and reel VS-MBRB1045-M3 50 Antistatic plastic tubes VS-MBRB1045TRL-M3 800 13" diameter plastic tape and reel VS-MBRB1045TRR-M3 800 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?95293 Revision: 21-Dec-2021 Document Number: 96393 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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