VS-SD1100C..L Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 1170 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-PUK (DO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
B-PUK (DO-200AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
1170 A
Package
B-PUK (DO-200AB)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
VS-SD1100C..L
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
UNITS
04 to 20
25 to 32
1170
910
A
55
55
°C
2080
1660
A
25
25
°C
50 Hz
13 000
10 500
60 Hz
13 600
11 000
A
50 Hz
846
551
60 Hz
772
503
Range
400 to 2000
2500 to 3200
V
-40 to +180
-40 to +150
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD1100C..L
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
30
3000
3100
32
3200
3300
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 11-Jan-18
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VS-SD1100C..L Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VS-SD1100C..L
TEST CONDITIONS
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
25 to 32
1170 (600)
910 (420)
A
55 (85)
55 (85)
°C
2080
1660
13 000
10 500
13 600
11 000
10 930
8830
11 450
9250
846
551
772
503
598
390
100 % VRRM
reapplied
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
t = 10 ms
t = 8.3 ms
UNITS
04 to 20
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.78
0.84
High level value of threshold
voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.94
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.26
0.38
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.31
1.44
A
kA2s
kA2s
V
mW
Maximum forward voltage drop
VFM
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
SD1100C..L
TEST CONDITIONS
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
25 to 32
-40 to +180
-40 to +150
UNITS
°C
-55 to +200
TStg
RthJ-hs
DC operation single side cooled
0.11
DC operation double side cooled
0.05
Mounting force, ± 10 %
Approximate weight
Case style
04 to 20
See dimensions - link at the end of datasheet
K/W
9800
(1000)
N
(kg)
250
g
B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.011
0.011
0.008
0.008
120°
0.014
0.015
0.014
0.014
90°
0.018
0.018
0.019
0.019
60°
0.026
0.026
0.027
0.028
30°
0.045
0.046
0.046
0.046
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
180
Vishay Semiconductors
SD1100C..L Series (400V to 2000V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
160
140
120
Conduction Angle
100
30°
80
60°
90°
60
120°
180°
40
0
200
400
600
800
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heat sink Temperature (°C)
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180
SD1100C..L Series (400V to 2000V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
160
140
120
100
Conduction Period
30°
80
60°
90°
60
120°
40
180°
DC
20
0
Average Forward Current (A)
SD1100C..L Series (400V to 2000V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
160
140
120
Conduc tion Period
100
80
60
90°
60° 120°
40
30°
180°
DC
20
0
200
400
600
800
1000 1200
150
140
120
Conduction Angle
100
80
30°
60
60°
90°
120°
180°
40
20
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
2500
130
120
110
100
Conduction Angle
90
80
30°
60°
70
90°
60
120°
180°
50
40
0
100
200
300 400
500
600
700
Fig. 5 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
160
2000
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
SD1100C..L Series (400V to 2000V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
1500
SD1100C..L Series (2500V to 3200V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
140
Average Forward Current (A)
180
1000
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Fig. 1 - Current Ratings Characteristics
180
500
Average Forward Current (A)
150
SD1100C..L Series (2500V to 3200V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
140
130
120
110
100
90
80
Conduction Period
70
60
50
90°
40
30
30°
60°
180° DC
20
0
200
120°
400
600
800
1000
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD1100C..L Series
150
Vishay Semiconductors
SD1100C..L Series (2500V to 3200V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
140
130
120
110
100
90
Conduction Angle
80
70
60
50
30°
60°
90°
40
120°
180°
30
20
0
200
400
600
800
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
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3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
1500
Conduc tion Period
1000
SD1100C..L Series
(400V to 2000V)
TJ = 180°C
500
0
1000 1200
0
Average Forward Current (A)
100
90
Conduction Period
80
70
60
30°
60°
90°
50
120°
40
30
20
180°
DC
0
400
800
1200
1600
2000
2500
RMS Limit
1500
1000
Conduction Angle
SD1100C..L Series
(400V to 2000V)
TJ = 180°C
500
0
0
200
400
600
2000
2500
1800
180°
120°
90°
60°
30°
1600
1400
1200
800 1000 1200 1400
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
RMS Limit
1000
800
Conduction Angle
600
SD1100C..L Series
(2500V to 3200V)
TJ = 150°C
400
200
0
0
200
400
600
800
1000 1200
Average Forward Current (A)
Fig. 11 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
Fig. 8 - Current Ratings Characteristics
2000
1500
2000
Average Forward Current (A)
180°
120°
90°
60°
30°
1000
Fig. 10 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
SD1100C..L Series (2500V to 3200V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
140
130
120
110
500
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
150
RMS Limit
2500
DC
180°
120°
90°
60°
30°
2000
1500
RMSLimit
1000
Conduction Period
SD1100C..L Series
(2500V to 3200V)
TJ = 150°C
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
12000
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
11000
10000
9000
8000
7000
6000
5000
SD1100C..L Series
(400V to 2000V)
4000
3000
1
10
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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100
11000
10000
9000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No Voltage Reapplied
Rated VRRMReapplied
8000
7000
6000
5000
SD1100C..L Series
(2500V to 3200V)
4000
3000
0.01
0.1
14000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
No Voltage Reapplied
Rated VRRM Reapplied
13000
12000
11000
10000
9000
8000
7000
6000
5000
SD1100C..L Series
(400V to 2000V)
4000
3000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
TJ= 25°C
TJ= 180°C
1000
SD1100C..L Series
(400V to 2000V)
100
0.5
1
Pulse Train Duration (s)
8000
7000
6000
5000
SD1100C..L Series
(2500V to 3200V)
4000
3000
1
10
1.5
2
2.5
3
3.5
4
100
Number Of Eq ual Amp litude Half Cycle Current Pulses (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
1
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
TJ = 25°C
TJ = 150°C
1000
SD1100C..L Series
(2500V to 3200V)
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
Transient Thermal Impedanc e Z thJ-hs (K/ W)
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Vishay Semiconductors
1
Steady State Value
RthJ-hs = 0.11 K/ W
(Single Side Cooled)
0.1
RthJ-hs = 0.05 K/ W
(Double Side Cooled)
(DC Operation)
0.01
SD1100C..L Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
110
0
C
32
L
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
Document Number: 93536
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Outline Dimensions
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Vishay Semiconductors
B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
25.4 (1)
26.9 (1.06)
C
A
53 (2.09) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95246
1
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
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