VS-SD1100C..C Series
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Vishay Semiconductors
Standard Recovery Diodes
(Hockey PUK Version), 1400 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-43
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
B-43
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
1400 A
Package
B-43
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
1400
1100
A
55
55
°C
2500
2000
A
25
25
°C
50 Hz
13 000
10 500
60 Hz
13 600
11 000
Ths
IFSM
I2t
VRRM
UNITS
25 to 32
Ths
IF(RMS)
SD1100C..C
04 to 20
A
50 Hz
846
551
60 Hz
772
503
Range
400 to 2000
2500 to 3200
V
-40 to +180
-40 to +150
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD1100C..C
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
25
2500
2600
30
3000
3100
32
3200
3300
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
35
Revision: 11-Jan-18
Document Number: 93535
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VS-SD1100C..C Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
IF(AV)
IF(RMS)
Maximum RMS forward current
IFSM
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
Maximum I2t for fusing
I2t
No voltage
reapplied
55 (85)
55 (85)
No voltage
reapplied
100 % VRRM
reapplied
25 to 32
1400 (795) 1100 (550)
25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
04 to 20
180° conduction, half sine wave
Double side (single side) cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive current
SD1100C..C
TEST CONDITIONS
Sinusoidal half wave,
initial TJ = TJ maximum
2500
2000
13 000
10 500
13 600
11 000
10 930
8830
11 450
9250
846
551
772
503
100 % VRRM
reapplied
598
390
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.78
0.84
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.94
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.26
0.38
VFM
Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
1.31
1.44
UNITS
A
°C
A
kA2s
kA2s
V
m
Maximum forward voltage drop
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
SD1100C..C
TEST CONDITIONS
04 to 20
25 to 32
TJ
-40 to +180 -40 to +150
TStg
-55 to +200
RthJ-hs
DC operation single side cooled
0.076
DC operation double side cooled
0.038
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
UNITS
°C
K/W
9800 (1000)
N (kg)
83
g
B-43
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.007
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93535
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VS-SD1100C..C Series
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Vishay Semiconductors
SD 1100C..C Series (400V to 2000V )
(Single Side Cooled)
R th J- hs (DC) = 0.076 K/W
160
140
120
C o ndu ct io n A ng le
100
30°
60°
80
90°
120°
180°
60
40
0
200
400
600
800
1000
180
M a xim u m A llo w a b le H e a t sin k Te m p e ra t u re (°C )
Maxim um Allowable Heatsink Temperature (°C)
180
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(D o ub le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 3 8 K/ W
160
140
120
Co nd uc tio n Pe rio d
100
30 °
80
60 °
90°
60
1 2 0°
1 8 0°
40
20
DC
0
0
1500
2 0 00
2 5 00
3 0 00
Fig. 4 - Current Ratings Characteristics
180
150
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(S in gle Sid e C o o le d )
R thJ-hs (D C ) = 0 .0 7 6 K /W
160
140
120
Co nd uc tio n Pe rio d
100
80
60
9 0°
40
30 °
6 0°
1 2 0°
1 8 0°
DC
20
0
400
80 0
12 0 0
1 6 00
Maxim um Allowable Heatsin k Tem perature (°C)
M a x im u m A llo w a b le H e a tsin k Te m p e ra t u re (°C )
10 0 0
Fig. 1 - Current Ratings Characteristics
SD 1100C..C Series (2500V to 3200V )
(Single Side Cooled)
R thJ- hs (DC) = 0.076 K/W
140
130
120
110
C o nd uct io n An g le
100
90
80
30°
70
60°
60
90°
120°
180°
50
40
0
200
400
600
Fig. 5 - Current Ratings Characteristics
180
150
140
130
120
110
100
90
80
70
60
50
40
30
20
S D 1 1 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V )
(D o u b le S id e C o o le d )
R th J-hs (D C ) = 0 .0 3 8 K /W
140
120
Co nd uc tio n A ng le
100
30 °
80
60°
90°
60
120 °
180 °
40
20
0
4 00
80 0
12 0 0
1 6 00
2 0 00
A v e ra g e F o rw a rd C u rr e n t (A )
Fig. 3 - Current Ratings Characteristics
Maxim um Allowable Heatsink Tem perature ( °C)
Fig. 2 - Current Ratings Characteristics
160
800
Average Forward Current ( A)
A v e ra g e Fo rw a rd C u rre n t (A )
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
500
A v e ra g e F o rw a r d C u rre n t (A )
Average Forward Curren t (A)
SD1100C..C Series (2500V to 3200V)
(Single Side Cooled)
R th J-hs (DC) = 0.076 K/W
C o ndu ct io n Pe rio d
90°
60°
120°
30°
0
200
400
180°
600
DC
800 1000 1200 1400
Average Forward Curren t (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93535
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VS-SD1100C..C Series
Vishay Semiconductors
4500
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD 1100C..C Series (2500V to 3200V)
(Double Side Cooled )
R thJ-h s (D C) = 0.038 K/W
C o nd uct io n A ng le
30°
0
200
400
60°
600
90°
120°
180°
Maxim um Average Forward Power Loss (W )
Maximum Allowable Heatsink Tem perature (°C)
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4000
DC
180°
120°
90°
60°
30°
3500
3000
2500
2000
C o ndu c tio n Pe rio d
1500
SD1100C..C Series
(400V to 2000V )
TJ = 180°C
1000
500
0
0
800 1000 1200 1400
500
Average Forw ard Curren t (A)
1500
2000
2500
3000
Fig. 10 - Forward Power Loss Characteristics
3000
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled)
R thJ-h s (D C) = 0.038 K/W
C o nduc tion Pe rio d
30°
60°
90°
120°
180°
DC
0
400
800
1200 1600
2000 2400
Maximum A verage Forward Power Loss (W )
Maxim um Allowable Heatsink Temperature (°C)
1000
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
180°
120°
90°
60°
30°
2500
2000
RM S Limit
1500
C o nd uc tio n Ang le
1000
SD1100C..C Series
(2500V to 3200V)
TJ = 150°C
500
0
0
200
Avera ge Forward Curren t (A)
400
600
800 1000 1200 1400
Average Forw ard Current (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
3500
180°
120°
90°
60°
30°
3000
2500
RMS Limit
2000
1500
1000
C o nd uct io n A ng le
500
SD 1100C..C Series
(400V to 2000V)
TJ = 180°C
0
0
400
800
1200
1600
Average Forward Curren t (A)
Fig. 9 - Forward Power Loss Characteristics
Maxim um Average Forw ard Power Loss (W )
3500
Maxim um Average Forward Power Loss (W )
RM S Lim it
DC
180°
120°
90°
60°
30°
3000
2500
RMS Lim it
2000
1500
C o ndu ctio n Pe rio d
1000
SD1100C..C Series
(2500V to 3200V )
TJ = 150°C
500
0
0
400
800
1200
1600
2000
2400
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93535
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VS-SD1100C..C Series
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A t A n y R a t e d Lo a d C o n d it io n A n d W it h
R a t e d V RRM A p p lie d Fo llo w in g S urg e .
In it ia l TJ = 1 8 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
1 1 00 0
1 0 00 0
9 0 00
8 0 00
7 0 00
6 0 00
5 0 00
SD 1 1 0 0 C ..C S e rie s
(4 0 0 V t o 2 0 0 0 V )
4 0 00
3 0 00
1
10
11000
Peak Half Sine W ave Forward Curren t (A)
P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
1 2 00 0
Vishay Semiconductors
10 0
10000
9000
M aximum Non Repet itive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No V oltage Reapplied
Rated V R RMReapplied
8000
7000
6000
5000
4000
SD 1100C..C Series
(2500V to 3200V)
3000
0.01
0.1
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration .
In itial TJ = 180 °C
No Voltage Reapplied
Rated V RRMReapplied
13000
12000
11000
10000
TJ = 25°C
9000
8000
7000
6000
5000
SD1100C..C Series
(400V to 2000V )
4000
3000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instan tan eous Forw ard Curren t (A)
Pea k Half Sine Wave Forward Current (A)
14000
TJ = 180°C
1000
SD1100C..C Series
(400V to 2000V )
100
0.5
1
Pulse Train Dura tion (s)
8000
7000
6000
5000
SD 1100C..C Series
(2500V to 3200V)
4000
3000
1
10
1.5
2
2.5
3
3.5
4
10 0
N um b e r O f Equ al A m plitud e Half Cy c le C urre nt P ulse s (N )
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000
TJ = 25°C
In stantaneous Forw ard Current (A)
Peak Half Sine W ave Forward Curren t (A)
At An y Rated Load Con dition And W ith
Rated V R RM Applied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
9000
1
Instan ta neous Forward V oltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1
Pulse Train Duration (s)
N um b er O f E qua l A m plitud e H alf C y cle Cu rre nt Pulse s (N )
TJ = 150°C
1000
SD 1100C..C Series
(2500V to 3200V )
100
0.5
1
1.5
2
2. 5
3
3.5
4
4.5
5
In stantan eous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
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VS-SD1100C..C Series
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T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs ( K /W )
0 .1
St e a d y St at e V a lue
R thJ-hs = 0 .0 7 6 K /W
( Sing le Sid e C o o le d )
R thJ-hs = 0 .0 3 8 K /W
( D o u ble Sid e C o o le d )
0 .0 1
( D C O p e ra t io n )
SD 1 1 0 0 C ..C Se rie s
0 .0 0 1
0.0 01
0 .01
0. 1
1
10
Sq u a re W a v e Pu lse D u rat io n ( s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
110
0
C
32
C
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95249
Revision: 11-Jan-18
Document Number: 93535
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Outline Dimensions
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B-43
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
15.4 (0.61)
14.4 (0.57)
C
A
40.5 (1.59) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95249
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 01-Jan-2019
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