VS-SD2000C10L

VS-SD2000C..L Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 2100 A FEATURES • Wide current range • High voltage ratings up to 1000 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style B-PUK (DO-200AB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 B-PUK (DO-200AB) TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IF(AV) 2100 A Package B-PUK (DO-200AB) Circuit configuration Single • High power drives • Auxiliary system supplies for traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) Ths IFSM I2t VRRM VALUES UNITS 2100 A 55 °C 3900 A 25 °C 50 Hz 23 900 60 Hz 25 000 50 Hz 2857 60 Hz 2608 Range 400 to 1000 V -40 to +180 °C IRRM MAXIMUM AT TJ = 180 °C mA TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD2000C..L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 60 Revision: 11-Jan-18 Document Number: 93540 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD2000C..L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature IF(AV) Maximum RMS forward current TEST CONDITIONS IF(RMS) 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM t = 8.3 ms Maximum I2t for fusing I 2t Maximum I2t for fusing I2t t = 8.3 ms t = 8.3 ms A 20 100 Sinusoidal half wave, initial TJ = TJ maximum 21 000 2857 2608 100 % VRRM reapplied t = 10 ms °C 25 000 No voltage  reapplied t = 10 ms A 55 (85) 23 900 100 % VRRM reapplied t = 10 ms UNITS 2100 (1040) 3900 No voltage  reapplied t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current VALUES 180° conduction, half sine wave Double side (single side) cooled 2020 kA2s 1844 t = 0.1 to 10 ms, no voltage reapplied 28 570 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.74 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.86 kA2s V Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.13 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.12 Ipk = 6000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.55 V VALUES UNITS mW Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS TJ -40 to +180 TStg -55 to +200 RthJ-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 14 700 (1500) N (kg) 255 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE SINGLE SIDE DOUBLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93540 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD2000C..L Series www.vishay.com SD 2 0 0 0 C ..L Se rie s (Sin g le S id e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W 160 140 120 C o nduc tio n An gle 100 80 60 18 0° 60 ° 30° 90 ° 120° 40 0 2 00 40 0 6 00 8 0 0 10 0 0 1 2 00 1 4 00 180 Maxim um Allowab le Heatsink Tem perature ( °C) M a xim u m A llo w a b le H e a ts in k Te m p e ra t u re (°C ) 180 Vishay Semiconductors SD2000C..L Series (Double Side Cooled) R thJ-h s (DC) = 0.031 K/W 160 140 120 100 C o ndu ctio n Pe rio d 80 30° 60 90° 40 180° DC 0 0 1000 2000 3000 4000 Average Forward Curren t (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 4000 SD 2000C..L Series (Single Sid e Cooled) R thJ-h s (DC) = 0.073 K/W 1 60 1 40 1 20 1 00 C o nduc tion Pe riod 80 60 30° 60 ° 40 90 ° 120° 20 180° DC 0 0 5 00 1000 1 500 200 0 2 500 M aximum Average Forward Power L oss (W) 1 80 Maxim um Allowable Heatsink Temperatur e (°C) 120° 20 A v e ra g e F o rw a rd C u rre n t (A ) 3500 180° 120° 90° 60° 30° 3000 2500 2000 C on duc tio n A ngle 1000 SD2000C..L Series TJ = 180°C 500 0 0 120 C o nd uctio n A ng le 80 30° 60 60° 90° 40 120° 180° 20 0 0 500 1000 1500 2000 1500 2000 2500 Fig. 5 - Forward Power Loss Characteristics 2500 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Maxim um Average Forward Pow er Loss (W ) 140 100 1000 5000 SD2000C..L Series (Double Side Cooled) R th J- hs (DC) = 0.031 K/W 160 500 Average Forward Curren t (A) Fig. 2 - Current Ratings Characteristics 180 RM S Limit 1500 Average Forward Current (A) Maxim um Allowable Heatsin k Tem perature ( °C) 60° 4500 DC 180° 120° 90° 60° 30° 4000 3500 3000 RMS Limit 2500 2000 C o ndu ctio n Pe rio d 1500 1000 SD 2000C..L Series TJ = 180°C 500 0 0 1000 2000 3000 4000 Average Forwa rd Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93540 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD2000C..L Series www.vishay.com 30000 At Any Rated Load Cond ition An d W ith Rated V RRM Applied Following Surge. Initial TJ = 180 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 20000 Peak Half Sine W ave Forward Curren t (A) Peak Half Sine W ave Forward Current (A) 25000 Vishay Semiconductors 15000 10000 SD2000C..L Series 5000 1 10 25000 M aximum Non Repet itive Surge Current Versus Pulse Train Duration. In itial TJ = 180 °C No V oltage Reapplied Rated V R RM Reapplied 20000 15000 10000 SD 2000C..L Series 5000 0.01 10 0 0.1 1 Pulse Train Duration (s) Nu m be r O f E qua l A m p litude H alf C y cle C urre nt P ulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled In stantaneous F orward Current (A) 100000 TJ = 25°C 10000 TJ = 180°C 1000 SD2000C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 In stantaneous Forward V oltage (V ) Fig. 9 - Forward Voltage Drop Characteristics T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs ( K / W ) 0 .1 SD 2 0 0 0 C ..L Se rie s 0 .0 1 S te ad y St a te V alu e R th J-h s = 0 .0 7 3 K /W ( S in g le Side C o o le d) R th J-h s = 0 .0 3 1 K /W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 Sq u are W a v e Pu lse D u ra tio n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 11-Jan-18 Document Number: 93540 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD2000C..L Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- SD 200 0 C 10 L 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93540 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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