VS-SD300R25PC

VS-SD300N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 380 A FEATURES • Wide current range • High voltage ratings up to 3200 V • High surge current capabilities • Stud cathode and stud anode version • Standard JEDEC® types • Compression bonded encapsulations DO-9 (DO-205AB) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IF(AV) 380 A Package DO-9 (DO-205AB) Circuit configuration Single • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) VS-SD300N/R TEST CONDITIONS I2t VRRM 25 to 32 UNITS 380 380 A TC 100 70 °C 595 425 50 Hz 6050 6050 60 Hz 6335 6335 50 Hz 183 183 60 Hz 167 167 Range 1600 to 2000 2500 to 3200 V -40 to +180 -40 to +150 °C IF(RMS) IFSM 16 to 20 TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD300N/R VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 20 2000 2100 25 2500 2600 28 2800 2900 32 3200 3300 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 Revision: 28-Apr-2020 Document Number: 93545 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300N/R Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current IF(RMS) 180° conduction, half sine wave DC at TC = 88 °C (02 to 24), TC = 91 °C (25 to 32) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms I2√t 25 to 32 380 270 A 100 100 °C 300 380 A 125 70 °C 595 No voltage reapplied 425 6050 No voltage reapplied 100 % VRRM reapplied A 6335 5090 Sinusoidal half wave, initial TJ = TJ maximum 5330 183 167 129 t = 0.1 to 10 ms, no voltage reapplied 1830 0.95 kA2s 118 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.05 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.75 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.66 VFM Ipk = 1180 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave Maximum forward voltage drop UNITS 16 to 20 100 % VRRM reapplied t = 8.3 ms Maximum I2√t for fusing SD300N/R TEST CONDITIONS 1.83 kA2√s V mΩ 1.83 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range SD300N/R TEST CONDITIONS 16 to 20 UNITS 25 to 32 TJ -40 to 180 -40 to 150 Maximum storage temperature range TStg -55 to 200 Maximum thermal resistance, junction to case RthJC DC operation 0.11 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat, and greased 0.04 °C K/W Maximum allowed mounting torque ± 10 % Not-lubricated threads Approximate weight Case style See dimensions (link at the end of datasheet) 27 Nm 250 g DO-9 (DO-205AB) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.019 0.013 120° 0.023 0.023 90° 0.028 0.030 60° 0.042 0.044 30° 0.073 0.074 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 28-Apr-2020 Document Number: 93545 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300N/R Series 180 Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com SD300N/ RSeries(1600V to 2000V) RthJC (DC) = 0.11 K/ W 170 160 150 Conduction Angle 140 130 30° 60° 120 90° 120° 110 180° 100 90 80 0 50 100 150 200 250 300 350 400 150 SD300N/ R Series (2500V to 3200V) RthJC (DC) = 0.11 K/ W 140 130 Conduction Angle 120 110 100 120° 180° 90 0 Average Forward Current (A) 50 100 150 200 250 Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 180 150 SD300N/ RSeries(1600V to 2000V) RthJC (DC) = 0.11 K/ W 170 160 150 140 Conduction Period 130 120 110 100 90 30° 90° 60° 120° 180° DC 80 0 100 200 300 400 500 600 700 SD300N/ R Series (2500V to 3200V) RthJC (DC) = 0.11 K/ W 140 130 Conduction Period 120 110 30° 100 60° 90° 120° 90 180° DC 300 400 80 0 100 200 500 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 700 = 3 0.0 W K/ K/ W SA W K/ 0.2 K/ W a R RMSLimit 400 elt -D 500 0. 1 R th 180° 120° 90° 60° 30° 600 06 0. Maximum Average Forward Power Loss(W) 300 Average Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 90° 60° 30° 0.4 K/ W 300 Conduc tion Angle 0.6 K / SD300N/ R Series (1600V to 2000V) TJ = 180°C 0.8 K/ W 200 100 W 2 K/ W 0 0 50 100 150 200 250 300 350 400 20 40 Average Forward Current (A) 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Forward Power Loss Characteristics Revision: 28-Apr-2020 Document Number: 93545 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300N/R Series Vishay Semiconductors 900 R DC 180° 120° 90° 60° 30° 700 600 SA 800 th Maximum Average Forward Power Loss (W) www.vishay.com 0. 06 0.1 500 0.2 RMSLimit 400 Conduction Period 300 200 100 0. 03 K/ W K/ W -D el ta R K/ W 0.4 K/ 0.6 K / SD300N/ R Series (1600V to 2000V) TJ = 180°C = K/ W W W 0.8 K/ W 2 K/ W 0 0 100 200 300 400 500 600 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) 700 Rt 180° 120° 90° 60° 30° 0. 06 02 0. K/ W 0.1 K/ W -D ta el R RMSLimit W K/ 500 = 600 A hS Maximum Average Forward Pow er Loss (W) Fig. 6 - Forward Power Loss Characteristics 400 0.2 K/ W 300 0.4 K/ W Conduction Angle 200 SD300N/ R Series (2500V to 3200V) TJ = 150°C 100 0.8 K / W 1.8 K/ W 0 0 25 50 100 150 200 250 300 350 400 Average Forward Current (A) 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 900 DC 180° 120° 90° 60° 30° 800 700 600 R SA th Maximum Average Forward Pow er Loss (W) Fig. 7 - Forward Power Loss Characteristics 500 RMS Limit 400 = 0.0 6K /W 0.1 K/ W SD300N/ R Series (2500V to 3200V) TJ = 150°C 200 100 K/ W -D el ta R 0.2 K/ W Conduction Period 300 0. 02 0.4 K /W 0.8 K / W 1.8 K/ W 0 0 100 200 300 400 500 Average Forward Current (A) 25 600 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 8 - Forward Power Loss Characteristics Revision: 28-Apr-2020 Document Number: 93545 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300N/R Series 5500 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRMApplied Following Surge. Initial TJ = TJ max. @60 Hz 0.0083 s @50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 2000 SD300N/ R Series 1500 1 10 100 6500 6000 5500 5000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = TJ max. No Voltage Reapplied Rated VRRM Reapplied 4500 4000 3500 3000 2500 2000 1500 SD300N/ R Series 1000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 TJ = 25°C 1000 TJ = TJ max. SD300N/ R Series 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 11 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: RthJC = 0.11 K/ W (DC Operation) 0.01 SD300N/ R Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristics Revision: 28-Apr-2020 Document Number: 93545 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300N/R Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- SD 30 0 N 32 P C 1 2 3 4 5 6 7 8 1 - Vishay semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - N = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A 8 - C = ceramic housing LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95301 Revision: 28-Apr-2020 Document Number: 93545 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing 19 (0.75) MAX. 4 (0.16) MAX. 39 (1.53) MAX. 9.5 (0.37) MIN. DIA. 8.5 (0.33) NOM. C.S. 35 mm2 (0.054 s.i.) 210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX. 82 (3.23) MIN. SW 32 16 (0.63) MAX. 21 (0.82) MAX. 3/4"-16UNF-2A* Document Number: 95301 Revision: 09-Apr-08 *For metric device: M16 x 1.5 contact factory For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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