VS-SD603C10S10C

VS-SD603C..C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 600 A FEATURES • • • • • • • • • • • • B-43 PRIMARY CHARACTERISTICS High power fast recovery diode series 1.0 μs to 2.0 μs recovery time High voltage ratings up to 2200 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC® B-43 Maximum junction temperature 125 °C Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 600 A TYPICAL APPLICATIONS Package B-43 Circuit configuration Single • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) S20 600 600 600 A 55 55 55 °C 942 942 942 A 25 25 25 °C 50 Hz 8320 8320 8320 60 Hz 8715 8715 8715 Ths IFSM I2t VRRM trr UNITS S15 Ths IF(RMS) VS-SD603C..C S10 A 50 Hz 346 346 346 60 Hz 316 316 316 Range 400 to 1000 1200 to 1600 2000 to 2200 V 1.0 1.5 2.0 μs TJ TJ kA2s 25 25 25 -40 to +125 -40 to +125 -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD603C..S10C VS-SD603C..S15C VS-SD603C..S20C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 22 2200 2300 IRRM MAXIMUM AT TJ = 125 °C mA 45 Revision: 11-Jan-18 Document Number: 93178 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t UNITS A 55 (75) °C 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle  non-repetitive forward current VALUES 600 (300) t = 8.3 ms 942 8320 No voltage reapplied 100 % VRRM reapplied 7000 Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied 7330 346 316 kA2s 100 % VRRM reapplied 224 t = 0.1 to 10 ms, no voltage reapplied 3460 t = 10 ms t = 8.3 ms 245 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 1.36 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 1.81 Low level of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.87 High level of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.67 Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.97 Maximum forward voltage drop VFM A 8715 kA2s V mW V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE Ipk SQUARE PULSE (A) trr AT 25 % IRRM (μs) S10 1.0 S15 1.5 S20 2.0 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS dI/dt (A/μs) 1000 Vr (V) 25 -30 trr AT 25 % IRRM (μs) Qrr (μC) Irr (A) 2.0 45 34 3.2 87 51 3.5 97 55 IFM trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 150 RthJ-hs DC operation single side cooled 0.076 DC operation double side cooled 0.038 Mounting force, ± 10 % Approximate weight Case style UNITS °C K/W 9800 (1000) N (kg) 83 g See dimensions - link at the end of datasheet B-43 RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180° 0.006 0.007 0.005 0.005 120° 0.008 0.008 0.008 0.008 90° 0.010 0.010 0.011 0.011 60° 0.015 0.015 0.016 0.015 30° 0.026 0.025 0.026 0.025 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93178 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series 130 Vishay Semiconductors SD603C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 120 110 Conduction Angle 100 90 80 60° 30° 180° 90° 120° 70 0 50 100 150 200 250 300 350 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperat ure (°C) www.vishay.com 130 SD603C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.038 K/ W 120 110 100 Conduction Period 90 80 30° 70 180° 50 DC 40 0 200 110 Conduction Period 90 30° 60° 90° 120° 180° DC 60 0 100 200 300 400 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (°C) SD603C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 70 1400 1200 RMS Limit 1000 800 600 Conduction Angle 400 SD603C..C Series TJ = 125°C 200 0 0 Conduction Angle 90 80 60° 90° 120° 180° 50 0 100 200 300 400 500 600 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics 700 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 100 30° 200 300 400 500 600 Fig. 5 - Forward Power Loss Characteristics 110 60 100 Average Forward Current (A) SD603C..C Series (Double Side Cooled) R thJ-hs(DC) = 0.038 K/ W 70 1000 180° 120° 90° 60° 30° 1600 500 Fig. 2 - Current Ratings Characteristics 120 800 1800 Average Forward Current (A) 130 600 Fig. 4 - Current Ratings Characteristics 130 80 400 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 100 90° 120° Average Forward Current (A) 120 60° 60 2500 DC 180° 120° 90° 60° 30° 2000 1500 1000 RMS Limit Conduc tion Period SD603C..C Series TJ = 125°C 500 0 0 200 400 600 800 1000 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93178 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series www.vishay.com Vishay Semiconductors Peak Half Sine Wave Forward Current (A) 8000 10000 At Any Rated Load Condition and With Rated VRRM Applied Following Surge. Initial TJ = 125°C 7000 @60 Hz 0.0083 s 6500 @50 Hz 0.0100 s 6000 Instantaneous Forward Current (A) 7500 5500 5000 4500 4000 3500 SD603C..C Series 3000 1000 TJ = 25 °C TJ = 125 °C 100 SD603C..C Series 2500 10 1 10 .5 100 1.5 7000 Transient Thermal Impedance Z thJ-hs (K/ W) Peak Half Sine Wave Forward Current (A) 8000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125 °C No Voltage Reapplied Rated VRRMReapplied 6000 5000 4000 3000 SD603C..C Series 2000 0.01 0.1 3.5 4.5 5.5 6.5 7.5 8.5 Fig. 9 - Forward Voltage Drop Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 9000 2.5 Instantaneous Forward Voltage (V) Number of Equa l Amplitude Ha lf Cyc le Current Pulses (N) 1 0.1 SD603C..C Series 0.01 Stead y State Va lue : RthJ-hs= 0.076 K/ W (Single Side Cooled) RthJ-hs= 0.038 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 Pulse Train Duration (s) 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 V FP I Forward Rec overy (V) 80 TJ = 125°C 60 TJ = 25°C 40 20 SD603C..S20C Series 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Rate Off Rise Of Forward Current di/ d t (A/ usec) Fig. 11 - Typical Forward Recovery Characteristics Revision: 11-Jan-18 Document Number: 93178 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series 2.2 2.1 Vishay Semiconductors Maximum Reverse Recovery Time - Trr (µs) Maximum Reverse Recovery Time - Trr (µs) www.vishay.com SD603C..S10C Series TJ = 125 °C; V r = 30V I FM = 1000 A Square Pulse 2 1.9 500 A 1.8 250 A 1.7 1.6 10 100 4 SD603C..S15C Series TJ= 125 °C; V r = 30V 3.5 I FM = 1000 A Square Pulse 3 500 A 2.5 250 A 2 10 100 Fig. 12 - Recovery Time Characteristics Fig. 15 - Recovery Time Characteristics 130 I FM = 1000 A 120 Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD603C..S10C Series TJ = 125 °C; V r = 30V 20 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Recovery Charge - Qrr (µC) Rate Of Fall Of Forward Current - di/d t (A/ µs) Maximum Reverse Rec overy Charge - Qrr (µC) Rate Of Fall Of Forward Current - di/ dt (A/ µs) 200 180 I FM = 1000 A Square Pulse 160 140 500 A 120 100 250 A 80 60 SD603C..S15C Series TJ= 125 °C; V r = 30V 40 10 20 30 40 50 60 70 80 90 100 Fig. 13 - Recovery Charge Characteristics Fig. 16 - Recovery Charge Characteristics 120 110 100 90 80 I FM = 1000 A Square Pulse 500 A 250 A 70 60 50 40 30 20 SD603C..S10C Series TJ = 125 °C; V r = 30V 10 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Recovery Current - Irr (A) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Rate Of Fall Of Forward Current - di/ dt (A/ µs) 140 130 120 I FM = 1000 A Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD603C..S15C Series TJ= 125 °C; V r = 30V 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/µs) Fig. 14 - Recovery Current Characteristics Fig. 17 - Recovery Current Characteristics Revision: 11-Jan-18 Document Number: 93178 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series Vishay Semiconductors Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Rec overy Time - Trr (µs) www.vishay.com 4.5 SD603C..S20C Series TJ= 125 °C; V r = 30V 4 I FM = 1000 A 3.5 Sq uare Pulse 3 500 A 2.5 250 A 2 10 100 200 I FM = 1000 A 180 Sq uare Pulse 160 140 500 A 120 100 250 A 80 SD603C..S20C Series TJ = 125 °C; V r = 30V 60 40 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/ µs) Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) 150 140 IFM = 1000 A 130 Square Pulse 120 110 100 500 A 90 80 250 A 70 60 50 SD603C..S20C Series TJ= 125 °C; V r = 30V 40 30 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 20 - Recovery Current Characteristics 1E4 10 20 joules per pulse 20 joules per pulse 10 Peak Forward Current (A) 4 1 4 2 2 1 0.4 1E3 0.4 0.2 0.1 0.2 0.04 0.1 0.02 1E2 0.01 tp 1E1 1E1 SD603C..S10C Series Sinusoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt = 1000V/ µs 1E2 tp 1E3 Pulse Basewidth (µs) 1E4 1E1 SD603C..S10C Series Trapezoidal Pulse TJ = 125°C, VRRM = 1120V d v/ dt = 1000V/ µs; di/ dt=50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 11-Jan-18 Document Number: 93178 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD603C..C Series www.vishay.com Vishay Semiconductors 1E4 20 joules per pulse 20 joules p er p ulse Peak Forward Current (A) 10 10 4 2 4 1 1E3 2 0.4 1 0.2 0.4 0.1 0.04 0.2 0.02 1E2 tp 1E1 1E1 SD603C..S15C Series Sinusoid al Pulse TJ= 125°C, VRRM = 1760V d v/ dt = 1000V/ µs 1E2 SD603C..S15C Series Trapezoidal Pulse TJ = 125°C, VRRM = 1760V d v/ dt = 1000V/ µs; di/ dt=50A/ µs tp 1E3 1E1 1E4 1E2 1E3 1E4 Pulse Basewid th (µs) Pulse Basewidth (µs) Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 20 joules per pulse 20 joules per pulse Peak Forward Current (A) 10 10 4 4 2 2 1E3 1 1 0.4 0.4 0.2 0.1 1E2 0.04 tp 1E1 1E1 SD603C..S20C Series Sinusoidal Pulse TJ = 125°C, VRRM = 1760V dv/ dt = 1000V/ µs 1E2 tp 1E3 SD603C..S20C Series Trapezoidal Pulse TJ = 125°C, VRRM = 1760V dv/ dt = 1000V/ µs; di/ d t=50A/ µs 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code VS- SD 60 3 C 22 S20 C 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code (see Recovery Characteristics table) 8 - C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95249 Revision: 11-Jan-18 Document Number: 93178 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-43 DIMENSIONS in millimeters (inches) 42 (1.65) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) MIN. both ends 25.3 (1) DIA. MAX. 2 places 15.4 (0.61) 14.4 (0.57) C A 40.5 (1.59) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95249 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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