VS-STPS20L15G-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
2
1
• High frequency operation
3
Anode
1
3
N/C
D2PAK
• Guard ring for enhanced ruggedness and long term
reliability
(TO-263AB)
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
PRIMARY CHARACTERISTICS
IF(AV)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
20 A
VR
15 V
VF at IF
0.33 V
IRM max.
600 mA at 100 °C
TJ max.
125 °C
• Designed and qualified according to JEDEC®-JESD 47
EAS
10 mJ
Package
D2PAK (TO-263AB)
Circuit configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for
ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
19 Apk, TJ = 125 °C (typical)
TJ
Range
VALUES
UNITS
20
A
15
V
700
A
0.25
V
-55 to +125
°C
TEST CONDITIONS
VS-STPS20L15G-M3
UNITS
TJ = 100 °C
15
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 2 A, L = 6 mH
10
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
50 % duty cycle at TC = 85 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
20
700
A
330
Revision: 06-Nov-17
Document Number: 96397
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VS-STPS20L15G-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
19 A
Forward voltage drop
See fig. 1
VFM
(1)
TJ = 25 °C
40 A
19 A
TJ = 125 °C
40 A
Reverse leakage current
See fig. 2
IRM (1)
Threshold voltage
VF (TO)
TJ = 25 °C
VR = Rated VR
TJ = 100 °C
TYP.
MAX.
-
0.41
-
0.52
0.25
0.33
0.37
0.50
-
10
-
600
TJ = TJ maximum
UNITS
V
mA
0.182
V
7.6
mW
Forward slope resistance
rt
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
-
2000
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
8
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum junction temperature range
TJ
-55 to +125
Maximum storage temperature range
TStg
-55 to +150
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
1.5
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased (for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation (for D2PAK)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style D2PAK (TO-263AB)
UNITS
°C
°C/W
40
2
g
0.07
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
STPS20L15G
Revision: 06-Nov-17
Document Number: 96397
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-STPS20L15G-M3
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Vishay Semiconductors
1000
100
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
10
TJ = 100 °C
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
1000
100
TJ = 75 °C
10
TJ = 50 °C
TJ = 25 °C
1
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
3
6
9
12
15
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 06-Nov-17
Document Number: 96397
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VS-STPS20L15G-M3
Vishay Semiconductors
100
14
95
12
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
90
85
Square wave (D = 0.50)
80
75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
8
RMS limit
6
4
DC
2
See note (1)
70
0
0
4
8
12
16
20
0
24
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 06-Nov-17
Document Number: 96397
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-STPS20L15G-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- STPS
1
2
20
L
15
G
L
-M3
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Essential part number
3
-
Current rating (20 = 20 A)
4
-
Low voltage
5
-
Voltage rating (15 = 15 V)
6
-
G = D2PAK package
7
-
None = tube
L = tape and reel (left oriented)
R = tape and reel (right oriented)
8
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-STPS20L15G-M3
50
1000
Antistatic plastic tubes
VS-STPS20L15GL-M3
800
800
13" diameter reel
VS-STPS20L15GR-M3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 06-Nov-17
Document Number: 96397
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 01-Jan-2019
1
Document Number: 91000
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