VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
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Vishay Semiconductors
Power Rectifiers Diodes (T-modules), 40 A to 110 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• Designed and qualified for industrial level
D-55 (T-module)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
40 A to 110 A
Type
Modules - diode, high voltage
VRRM
100 V to 1200 V
Package
D-55 (T-module)
Circuit configuration
Single diode
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
T40HF
T70HF
T85HF
T110HF
40
70
85
110
A
85
85
85
85
°C
63
110
134
173
A
50 Hz
570
1200
1700
2000
60 Hz
600
1250
1800
2100
TC
IF(RMS)
IFSM
I2t
50 Hz
1630
7100
14 500
20 500
60 Hz
1500
6450
13 500
18 600
16 300
70 700
148 700
204 300
I2t
UNITS
A
A2s
A2s
VRRM
100 to 1200
V
TJ
-40 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-T40HF...
VS-T70HF...
VS-T85HF...
VS-T110HF...
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
IRRM MAXIMUM
AT TJ = 25 °C
μA
100
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
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FORWARD CONDUCTION
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
T40HF T70HF
Maximum average forward
current at case temperature
Maximum RMS forward current
IF(AV)
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive surge
current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
T85HF
T110HF
40
70
85
110
A
85
85
85
85
°C
63
110
134
173
A
2000
570
1200
1700
600
1250
1800
2100
480
1000
1450
1700
500
1050
1500
1780
1630
7100
14 500
20 500
1500
6450
13 500
18 600
1150
5000
10 500
14 500
1050
4570
9600
13 200
16 300 70 700 148 700 204 300
Low level value of threshold
voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
0.66
0.76
0.68
0.68
High level value of threshold
voltage
VF(TO)2
(I > x IF(AV)), TJ maximum
0.84
0.95
0.90
0.86
A
A2s
A2s
V
Low level value of forward slope
resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
4.3
2.4
1.76
1.56
High level value of forward slope
resistance
rf2
(I > x IF(AV)), TJ maximum
3.1
1.7
1.08
1.12
Maximum forward voltage drop
VFM
IFM = x IF(AV), TJ = 25 °C,
tp = 400 μs square pulse
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.30
1.35
1.27
1.35
m
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
RMS isolation voltage
VISOL
50 Hz, circuit to base, all terminals shorted
TJ = 25 °C, t = 1 s
T40HF T70HF T85HF T110HF UNITS
15
15
20
20
mA
3500
3500
3500
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface smooth, flat
and greased
Mounting torque,
± 10 %
Approximate weight
Case style
to heatsink
terminals
VALUES
T40HF T70HF T85HF T110HF
-40 to +150
Non-lubricated
threads
1.36
M3.5 mounting screws (1)
M5 screw terminals
See dimensions - link at the end of datasheet
0.69
0.62
UNITS
°C
0.47
K/W
0.2
1.3 ± 10 %
3 ± 10 %
54
Nm
g
D-55 (T-module)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
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R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
T40HF...
0.12
0.14
0.18
0.27
0.46
0.09
0.15
0.20
0.28
0.46
T70HF...
0.09
0.11
0.14
0.20
0.35
0.07
0.11
0.15
0.21
0.35
T85HF...
0.08
0.09
0.12
0.18
0.31
0.06
0.10
0.13
0.19
0.31
T110HF...
0.05
0.07
0.09
0.14
0.23
0.05
0.08
0.10
0.15
0.24
DEVICES
UNITS
K/W
Maximum Allowable Case Temperature (°C)
150
T40HF.. Series
R thJC (DC) = 1.36 K/ W
140
130
120
Conduction Angle
110
100
90
30°
60°
80
90°
120°
180°
70
60
0
10
20
30
40
50
150
T40HF.. Series
R thJC (DC) = 1.36 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
90°
80
120°
70
180°
DC
60
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
45
SA
R th
W
K/
.5
=0
3
W
K/
30
K/
W
W
K/
35
2
1
180°
120°
90°
60°
30°
40
5
1.
K/
W
RMS Limit
25
e lt
-D
5K
/W
R
20
a
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
7K
/W
Conduc tion Angle 10
K/ W
15
10
T40HF.. Series
TJ= 150°C
5
0
0
5
10
15
20
25
30
35
Average Forward Current (A)
40
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
Vishay Semiconductors
70
DC
180°
120°
90°
60°
30°
=
5
0.
K/
W
W
K/
1.
5
SA
50
1
th
60
R
K/
W
2K
/W
40
ta
el
-D
R
Maximum Average Forward Pow er Loss (W)
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3K
/W
30 RMSLimit
Conduc tion Period
20
T40HF.. Series
TJ = 150°C
10
5 K/
W
7 K/
W
10 K/ W
0
0
10
20
30
40
50
60
Average Forward Current (A)
0
70
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
550
At Any Ra ted Loa d Cond ition And With
Rated VRRM App lied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
450
400
350
300
250
200
T40HF.. Series
150
1
10
100
Maximum Allowable Case Temp erature (°C)
Peak Ha lf Sine Wave Forw ard Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
T70HF.. Series
R thJC (DC) = 0.69 K/ W
140
130
120
110
Conduction Angle
100
90
30°
90°
120°
70
180°
60
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
500
450
400
350
300
250
200
150
100
0.01
T40HF.. Series
0.1
1
20
30
40
50
60
70
80
Fig. 7 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
550
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J= 150°C
No Voltage Reapplied
Rated V RRM Reapplied
10
Average Forward Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
600
60°
80
150
T70HF.. Series
R thJC (DC) = 0.69 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
80
90°
120°
180°
70
DC
60
0
20
40
60
80
100
120
Pulse Train Duration (s)
Average Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Current Ratings Characteristics
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
Vishay Semiconductors
90
=
A
hS
R t
0.3
W
K/
1.5
ta
el
-D
K/
W
2K
/W
R
RMS Limit
50
W
K/
60
1K
/W
W
K/
70
5
0.
180°
120°
90°
60°
30°
80
7
0.
Maximum Average Forward Power Loss (W)
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3K
/W
40
30
5 K/
Conduc tion Angle
W
20
T70HF.. Series
TJ= 150°C
10
7 K/ W
0
0
10
20
30
40
50
60
70
0
Average Forward Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
120
=
2
0.
W
K/
ta
el
-D
1K
/W
1.5
K/ W
RMS Limit
R
60
SA
80
0.
5K
/W
0. 7
K/
W
W
K/
100
h
Rt
DC
180°
120°
90°
60°
30°
3
0.
Maximum Average Forward Power Loss (W)
Fig. 9 - Forward Power Loss Characteristics
2K/
W
40
Conduc tion Period
20
T70HF.. Series
TJ = 150°C
3K/ W
5K/ W
0
0
20
40
60
80
100
Average Forward Current (A)
120
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1100
At Any Ra ted Loa d Cond ition And With
Rated V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
500
400
T70HF.. Series
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 10 - Forward Power Loss Characteristics
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated V RRM Reapplied
800
700
600
500
400
300
200
0.01
T70HF.. Series
0.1
1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
Revision: 04-May-17
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
Vishay Semiconductors
T85HF.. Series
R thJC (DC) = 0.62 K/ W
140
130
Conduc tion Angle
120
110
30°
60°
90°
100
120°
180°
90
80
0
10
20
30
40
50
60
70
80
150
Maximum Allowable Case Temperature (°C)
150
90
T85HF.. Series
R thJC (DC) = 0.62 K/ W
140
130
120
Conduction Period
110
100
30°
90
60°
80
90°
120°
70
180°
DC
60
0
20
40
60
80
100
120
140
Average Forward Current (A)
Average Forward Current (A)
Fig. 13 - Current Ratings Characteristics
Fig. 14 - Current Ratings Characteristics
100
SA
.2
=0
W
K/
K/
W
h
Rt
3
0.
W
K/
1.5
K/
W
a
RMS Limit
e lt
-D
60
W
K/
70
1
W
K/
80
7
0.
180°
120°
90°
60°
30°
90
5
0.
2K
/W
50
R
Maximum Average Forward Power Loss (W)
Maximum Allowa ble Case Temperature (°C)
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3K
/W
40
30
Conduc tion Angle
20
T85HF.. Series
TJ= 150°C
10
5 K/ W
7 K/ W
0
0
10
20
30
40
50
60
70
0
90
80
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
140
DC
180°
120°
90°
60°
30°
W
K/
-D
ta
el
80
2
0.
0.5
K/
W
0.7
K/
W
=
/W
3K
0.
100
SA
th
120
R
1K
/W
60
R
Maximum Average Forward Power Loss (W)
Fig. 15 - Forward Power Loss Characteristics
1.5K
/W
RMSLimit
2K/ W
Conduc tion Period
40
3K/ W
T85HF.. Series
TJ = 150°C
20
5K/ W
0
0
20
40
60
80
100
120
Average Forward Current (A)
0
140
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - Forward Power Loss Characteristics
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Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
1600
Vishay Semiconductors
At Any Ra ted Loa d Cond ition And With
Ra ted V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
800
600
T85HF.. Series
400
1
10
150
Maximum Allowa ble Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
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100
T110HF.. Series
R thJC (DC) = 0.47 K/ W
140
130
120
Conduc tion Angle
110
100
90
30°
120°
180°
60
0
20
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1200
1000
800
600
T85HF.. Series
400
0.01
0.1
150
80
100
120
1
T110HF.. Series
R thJC (DC) = 0.47 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
90°
120°
80
70
180°
DC
60
0
20
Pulse Train Duration (s)
40
60
80 100 120 140 160 180
Average Forward Current (A)
Fig. 18 - Maximum Non-Repetitive Surge Current
Fig. 20 - Current Ratings Characteristics
130
W
K/
ta
el
-D
1K
/W
RMS Limit
2
0.
1. 5
R
80
70
K/
W
=
90
0.
5K
/W
W
K/
100
0.
7
SA
110
R th
180°
120°
90°
60°
30°
120
3
0.
Maximum Average Forward Power Loss (W)
60
Fig. 19 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
1400
40
Average Forward Current (A)
Fig. 17 - Maximum Non-Repetitive Surge Current
1600
90°
70
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1800
60°
80
K/ W
2K
/W
60
50
Conduc tion Angle
40
30
T110HF.. Series
TJ= 150°C
20
10
0
0
20
40
60
80
100
Average Forward Current (A)
3 K/
W
5 K/ W
120
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 21 - Forward Power Loss Characteristics
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
Vishay Semiconductors
180
DC
180°
120°
90°
60°
30°
160
140
120
R
SA
th
Maximum Average Forward Pow er Loss (W)
www.vishay.com
=
0.
3K
/W
0.
5K
/W
0.7
K/
W
100
0.
2
K/
W
-D
el
ta
R
1K
/W
80 RMSLimit
1.5
60
Conduc tion Period
K/ W
2 K/ W
40
3 K/ W
T110HF.. Series
TJ = 150°C
20
5 K/ W
0
0
20
40
60
80 100 120 140 160 180
0
Average Forward Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1800
1000
At Any Ra ted Loa d Cond ition And With
Rated V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1600
1400
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 22 - Forward Power Loss Characteristics
1200
1000
800
600
T110HF.. Series
100
TJ= 25°C
TJ= 150°C
10
T40HF.. Series
1
400
1
10
0
100
1800
1600
1200
1000
800
400
0.01
1.5
2
2.5
3
3.5
4
1000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1400
600
1
Fig. 25 - Forward Voltage Drop Characteristics
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 23 - Maximum Non-Repetitive Surge Current
2000
0.5
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
T110HF.. Series
100
TJ= 25°C
10
TJ= 150°C
T70HF.. Series
1
0.1
1
Pulse Train Duration (s)
Fig. 24 - Maximum Non-Repetitive Surge Current
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 26 - Forward Voltage Drop Characteristics
Revision: 04-May-17
Document Number: 93587
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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
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10000
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
10000
1000
TJ= 25°C
100
TJ= 150°C
T85HF.. Series
1000
TJ= 25°C
100
TJ= 150°C
T110HF.. Series
10
10
0
1
2
3
4
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
5
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
Transient Thermal Impedanc e ZthJC (K/ W)
Fig. 27 - Forward Voltage Drop Characteristics
Fig. 28 - Forward Voltage Drop Characteristics
10
1
Steady State Value:
RthJC = 1.36 K/ W
RthJC = 0.69 K/ W
RthJC = 0.62 K/ W
RthJC = 0.47 K/ W
(DC Operation)
T40HF.. Series
T70HF.. Series
T85HF.. Series
T110HF.. Series
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 29 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
T
110
HF
120
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Current rating
4
-
Circuit configuration (see Circuit Configuration table)
5
-
Voltage code x 10 = VRRM
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
Single diode
CIRCUIT CONFIGURATION CODE
HF
CIRCUIT DRAWING
2
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95313
Revision: 04-May-17
Document Number: 93587
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D-55 T-Module Diode Standard and Fast Recovery
DIMENSIONS in millimeters (inches)
26 ± 1
(1.02 ± 0.04)
3 ± 0.5
(0.12 ± 0.02)
23.5 ± 0.5
(0.93 ± 0.02)
41 (1.61) max.
11
(0.43)
18
(0.71)
2
27 ± 0.3
(1.06 ± 0.01)
3.9 ± 0.05
(0.15 ± 0.002)
8 ± 0.3
(0.31 ± 0.01)
15 (0.59)
1
M5
30 (1.18)
Note
• 1 = Anode
2 = Cathode
Revision: 21-Apr-17
Document Number: 95313
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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