VS-T..RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Power Modules), 50 A, 70 A, 90 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
D-55 (T-module)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
D-55 (T-module)
Circuit configuration
Single SCR
IT(AV)
50 A, 70 A, 90 A
VDRM/VRRM
100 V, 1200 V
VTM
1.55 V
IGT
120 mA
TJ
-40 °C to +125 °C
Type
Modules - thyristor, standard
DESCRIPTION
These series of T-modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment, regulated power supplies and temperature and
speed control circuits. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
T50RIA
VALUES
T70RIA
VALUES
T90RIA
UNITS
70 °C
50
70
90
A
80
110
141
A
50 Hz
1310
1660
1780
60 Hz
1370
1740
1870
IT(AV)
IT(RMS)
ITSM
I2t
50 Hz
8550
13 860
15 900
60 Hz
7800
12 650
14 500
85 500
138 500
159 100
Range
100 to 1200
100 to 1200
100 to 1200
I2t
VRRM
TJ
-40 to +125
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-T50RIA
VS-T70RIA
VS-T90RIA
VRSM, MAXIMUM
I
/I
MAXIMUM
NON-REPETITIVE PEAK REVERSE RRM DRM
AT TJ = 25 °C
VOLTAGE
μA
V
VOLTAGE
CODE
VRRM/VDRM,
MAXIMUM REPETITIVE PEAK REVERSE
AND PEAK OFF-STATE VOLTAGE
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
100
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VS-T..RIA Series
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Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at
case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
ITSM
t = 8.3 ms
t = 10 ms
Maximum
for fusing
I2t
A
70
70
°C
80
110
141
A
No voltage
reapplied
1310
1660
1780
1370
1740
1870
100 % VRRM
reapplied
1100
1400
1500
Sine half wave,
initial
TJ = TJ maximum
1150
1460
1570
13 860
15 900
7800
12 650
14 500
100 % VRRM
reapplied
6050
9800
11 250
8950
10 270
t = 0.1 to 10 ms, no voltage reapplied
85 500
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
90
8550
t = 10 ms
I2t
70
70
IT(RMS)
t = 8.3 ms
I2t
50
180° conduction, half sine wave
t = 10 ms
Maximum peak, one-cycle on-state,
non-repetitive surge current
VALUES VALUES VALUES
UNITS
T50RIA T70RIA T90RIA
TEST CONDITIONS
No voltage
reapplied
5520
138 500 159 100
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
0.97
0.77
0.78
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ maximum
1.13
0.88
0.88
A
A2s
A2s
V
Low level value of on-state slope
resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
4.1
3.6
2.9
High level value of on-state slope
resistance
rt2
(I > x IT(AV)), TJ maximum
3.3
3.2
2.6
Maximum on-state voltage drop
VTM
ITM = x IT(AV), TJ = 25 °C, tp = 400 μs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.55
1.55
V
Maximum forward voltage drop
VFM
ITM = x IT(AV), TJ = 25 °C, tp = 400 μs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.55
1.55
V
IH
Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C
200
200
200
IL
Anode supply = 6 V, resistive load = 10
Gate pulse: 10 V, 100 μs, TJ = 25 °C
400
400
400
Maximum holding current
Maximum latching current
m
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Typical turn-on time
tgd
TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A
Ig = 500 mA, tr 0.5, tp 6 μs
Typical reverse recovery time
trr
TJ = 125 °C, ITM = 50 A, tp = 300 μs, dI/dt = 10 A/μs
tq
TJ = TJ maximum, ITM = 50 A, tp = 300 μs, dI/dt = 15 A/μs,
VR = 100 V, linear to 80 % VDRM
Typical turn-off time
UNITS
0.9
3
μs
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM
TJ = TJ maximum
RMS isolation voltage
VISOL
50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s
Critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % rated VDRM
(1)
VALUES
UNITS
15
mA
3500
V
500
V/μs
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. T90RIA80S90
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VS-T..RIA Series
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TRIGGERING
PARAMETER
SYMBOL
VALUES VALUES VALUES UNIT
T50RIA T70RIA T90RIA
S
TEST CONDITIONS
PGM
TJ = TJ maximum, tp 5 ms
10
12
12
PG(AV)
TJ = TJ maximum, f = 50 Hz
2.5
3
3
Maximum peak gate current
IGM
3
3
A
-VGT
TJ = TJ maximum, tp 5 ms
2.5
Maximum peak negative gate voltage
10
10
10
V
TJ = -40 °C
4.0
4.0
4.0
2.5
2.5
2.5
1.5
1.5
1.5
Maximum peak gate power
Maximum average gate power
Maximum required DC gate voltage to
trigger
VGT
TJ = 25 °C
TJ = TJ maximum
Maximum required DC gate current to
trigger
TJ = -40 °C
IGT
Maximum gate voltage that will not
trigger
VGD
Maximum gate current that will not
trigger
IGD
Maximum rate of rise of turned-on
current
Anode supply = 6 V,
resistive load;
Ra = 1
W
V
250
270
270
TJ = 25 °C
100
120
120
TJ = TJ maximum
50
60
60
0.2
0.2
0.2
V
5.0
6.0
6.0
mA
200
200
200
180
180
180
160
160
160
150
150
150
mA
TJ = TJ maximum, rated VDRM applied
dI/dt
VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt
Ig = 400 mA for T50RIA and Ig = 500 mA for
T70RIA/T90RIA; tr < 0.5 μs, tp 6 μs
For repetitive value use 40 % non-repetitive
per JEDEC® STD. RS397, 5.2.2.6
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
VALUES VALUES VALUES
UNITS
T50RIA T70RIA T90RIA
TEST CONDITIONS
TJ
-40 to +125
Maximum storage
temperature range
TStg
-40 to +150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
°C
0.65
0.50
0.38
K/W
to heatsink
Non-lubricated
threads
terminals
0.2
M3.5 mounting screws (1)
1.3 ± 10 %
M5 screw terminals
Nm
3 ± 10 %
Approximate weight
54
Case style
g
D-55 (T-module)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
T50RIA
0.08
0.10
0.13
0.19
0.31
0.06
0.10
0.14
0.20
0.32
T70RIA
0.07
0.08
0.10
0.14
0.24
0.05
0.08
0.11
0.15
0.24
T90RIA
0.05
0.06
0.08
0.12
0.20
0.04
0.06
0.09
0.12
0.20
DEVICES
UNITS
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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VS-T..RIA Series
130
Vishay Semiconductors
T50RIA.. Series
R thJC (DC) = 0.65 K/W
120
110
100
Conduction Angle
90
80
30°
70
60°
90°
120°
60
180°
50
0
10
20
30
40
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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50
T50RIA.. Series
R thJC (DC) = 0.65 K/W
120
110
100
Conduction Period
90
80
70
60°
60
30°
180°
DC
50
60
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
K/
W
K/W
.1
=0
1
SA
60
0.
7
R th
180°
120°
90°
60°
30°
70
K/W
0.3
K/W
0.5
K/
W
1.5
K/W
50
R
RMS Limit
a
elt
-D
Maximum Average On-state Power Loss (W)
90°
120°
2K
/W
40
3K
/W
30
Conduction Angle
20
T50RIA.. Series
TJ= 125°C
10
5 K/W
10 K/W
0
0
10
20
30
0
50
40
Average On-state Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
110
R
60
ta
el
-D
70
W
K/
.1
=0
80
0.
5
K/
W
0.7
K/
W
1K
/W
SA
90
R th
DC
180°
120°
90°
60°
30°
100
/W
3K
0.
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
1.5
K/W
2K
/W
50 RMS Limit
40
Conduction Period
30
20
T50RIA.. Series
TJ = 125°C
10
3 K/
W
5 K/W
0
0
10
20
30
40
50
60
Average On-state Current (A)
70
80
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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1300
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
1200
Vishay Semiconductors
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1100
1000
900
800
700
600
T50RIA.. Series
500
1
10
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reapplied
Rated V RRMReapplied
1200
1100
1000
900
800
700
600
T50RIA.. Series
500
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
TJ= 25°C
10
TJ = 125°C
T50RIA.. Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
=6µs
(b)
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(a)
Tj=-40 °C
Tj=125 °C
1
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1) (2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
T50RIA.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
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Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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T70RIA.. Series
R thJC (DC) = 0.50 K/W
120
110
100
Conduction Angle
90
80
30°
70
60°
90°
60
120°
180°
50
0
10
20
30
40
50
60
70
130
T70RIA.. Series
RthJC (DC) = 0.50 K/W
120
110
100
Conduction Period
90
80
60°
70
30°
180°
DC
80
100
50
80
0
20
Average On-state Current (A)
40
60
120
Average On-state Current (A)
Fig. 9 - Current Ratings Characteristics
Fig. 10 - Current Ratings Characteristics
100
K/
W
aR
elt
-D
1K
/W
RMS Limit
60
K/
W
K/W
.1
=0
70
0.
5
0.7
A
80
R thS
180°
120°
90°
60°
30°
90
/W
3K
0.
Maximum Average On-state Power Loss (W)
90°
120°
60
1.5
K/W
2K
/W
50
40
30
3K
/W
Conduction Angle
5 K/W
20
T70RIA.. Series
TJ = 125°C
10
7 K/W
0
0
10
20
30
40
50
60
70
0
Average On-state Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
140
DC
180°
120°
90°
60°
30°
ta
el
-D
R
RMS Limit
60
W
K/
80
1
0.
K/
W
0.5
K/
W
0.7
K/W
1K
/W
=
100
0.
3
A
thS
120
R
Maximum Average On-state Power Loss (W)
Fig. 11 - On-State Power Loss Characteristics
1.5
K/W
Conduction Period
40
T70RIA.. Series
TJ = 125°C
20
2K
/W
3 K/W
5 K/W
0
0
20
40
60
80
100
Average On-state Current (A)
0
120
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 12 - On-State Power Loss Characteristics
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1700
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1300
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
1500
Vishay Semiconductors
1200
1100
1000
900
T70RIA.. Series
800
700
1
10
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
1600
1500
1400
1300
1200
1100
1000
900
800
T70RIA.. Series
700
600
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
TJ= 25°C
10
TJ= 125°C
T70RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 15 - On-State Voltage Drop Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
=6µs
(b)
1
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
(a)
Tj=-40 °C
Tj=125 °C
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1)
(2) (3)
(4)
VGD
0.1
0.001
IGD
0.01
T70RIA.., T90RIA.. Series Frequency Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
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T90RIA.. Series
R thJC (DC) = 0.38 K/W
120
110
100
Conduction Angle
90
80
30°
70
60°
90°
60
120°
180°
50
0
20
40
60
80
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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T90RIA.. Series
R thJC (DC) = 0.38 K/W
120
110
100
Conduction Period
90
80
70
90°
60°
60
180°
DC
50
0
100
20
40
60
80 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 17 - Current Ratings Characteristics
Fig. 18 - Current Ratings Characteristics
140
a
elt
-D
RMS Limit
1K
/W
R
80
K/
W
/W
1K
0.
0.
5K
/W
0.7
K/W
=
100
0.
3
SA
180°
120°
90°
60°
30°
120
R th
Maximum Average On-state Power Loss (W)
120°
30°
1.5
K/W
60
40
Conduction Angle
20
T90RIA Series
TJ = 125°C
2 K/W
3 K/W
0
0
10 20
30 40 50 60 70 80
Average On-state Current (A)
0
90
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
180
DC
180°
120°
90°
60°
30°
W
K/
ta
el
-D
R
0.
5K
/W
100
1
0.
120
0.
3K
/W
=
140
A
thS
160
R
Maximum Average On-state Power Loss (W)
Fig. 19 - On-State Power Loss Characteristics
0.7
K/W
1K
/W
80 RMS Limit
60
Conduction Period
40
T90RIA.. Series
TJ = 125°C
20
1.5
K/W
2 K/
W
0
0
20
40
60
0
80 100 120 140 160
Average On-state Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 20 - On-State Power Loss Characteristics
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VS-T..RIA Series
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1800
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1500
1400
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
1600
Vishay Semiconductors
1300
1200
1100
1000
900
T90RIA.. Series
800
700
1
10
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
1700
1600
1500
1400
1300
1200
1100
1000
900
800
T90RIA.. Series
700
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 21 - Maximum Non-Repetitive Surge Current
Fig. 22 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
TJ = 25°C
TJ = 125°C
10
T90RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 23 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.65 K/W
R thJC = 0.50 K/W
T50RIA.. Series
R thJC = 0.38 K/W
(DC Operation)
T70RIA.. Series
0.1
0.01
0.001
T90RIA.. Series
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
Revision: 27-Jul-2018
Document Number: 93756
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-T..RIA Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
T
50
RIA
120
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Current rating
4
-
Circuit configuration
5
-
Voltage code x 10 = VRRM
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
2
G
Single SCR
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95336
Revision: 27-Jul-2018
Document Number: 93756
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-55 (T-Module) Thyristor Standard
DIMENSIONS in millimeters (inches)
0.50 ± 0.03
(0.02 ± 0.001)
4.75 ± 0.1
(0.19 ± 0.004)
1.3 (0.05)
32 (1.26) max.
26 ± 1
(1.02 ± 0.04)
3 ± 0.5
(0.12 ± 0.02)
23.5 ± 0.5
(0.93 ± 0.02)
41 (1.61) max.
18
(0.71)
11
(0.43)
3 (0.12)
G
27 ± 0.3
(1.06 ± 0.01)
2
3.9 ± 0.05
(0.15 ± 0.002)
8 ± 0.3
(0.31 ± 0.01)
15 (0.59)
1
M5
30 (1.18)
Note
• 1 = anode
2 = cathode
Revision: 24-Apr-17
Document Number: 95336
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
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