VS-U5FH150FA60
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Vishay Semiconductors
FRED Pt® Gen 5
Ultrafast Rectifier Diode, 600 V, 150 A
FEATURES
• Ultrafast and optimized Qrr
• Best in class forward voltage drop and switching
losses trade off
• Optimized for high speed operation
• 175 °C maximum operating junction temperature
• Electrically isolated base plate
• Large creepage distance between terminal
SOT-227
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
PRIMARY CHARACTERISTICS
VR
600 V
VF (typical) at 75 A, per diode
1.34 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
trr (typical) at 75 A, per diode
70 ns
DESCRIPTION / APPLICATIONS
IF(DC) per module at TC = 117 °C
150 A
Type
Modules - diode, FRED Pt®
Package
SOT-227
Circuit configuration
Two separate diodes,
parallel pin-out
Featuring a unique combination of low conduction and
switching losses, the VS-U5FH150FA60 is the right choice
for high frequency converters, both soft switched / resonant.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are specifically designed to improve
efficiency of PFC and output rectification stages of EV / HEV
battery charging stations, booster stage of solar inverters,
and UPS applications, these devices are perfectly matched
to operate with MOSFETs or high speed IGBTs.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VR
Continuous forward current per diode
IF
Single pulse forward current per diode
IFSM
Maximum power dissipation per module
PD
RMS isolation voltage
VISOL
Operating junction and storage temperature range
MAX.
UNITS
600
V
TC = 117 °C
75
TJ = 25 °C
575
A
TC = 117 °C
215
Any terminal to case, t = 1 min
2500
V
-55 to +175
°C
UNITS
TJ, TStg
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode breakdown voltage
VBR
Forward voltage
VFM
Reverse leakage current
IRM
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 75 A
-
1.34
1.7
IF = 75 A, TJ = 150 °C
-
1.12
50
IR = 100 μA
VR = 600 V
-
0.2
TJ = 125 °C, VR = 600 V
-
31
-
TJ = 150 °C, VR = 600 V
-
139
-
V
μA
Revision: 19-May-2022
Document Number: 96941
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-U5FH150FA60
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
Junction capacitance
CT
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
70
-
TJ = 125 °C
-
99
-
-
19
-
-
40
-
TJ = 25 °C
-
0.6
-
TJ = 125 °C
-
2.5
-
VR = 600 V, f = 1 MHz
-
64.4
-
pF
MIN.
TYP.
MAX.
UNITS
-
-
0.54
-
-
0.27
-
0.05
-
TJ = 25 °C
TJ = 125 °C
IF = 75 A,
diF/dt = 1000 A/μs,
VR = 400 V
UNITS
ns
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance junction to case,
per diode
Thermal resistance junction to case,
per module
Thermal resistance case to heatsink,
per module
TEST CONDITIONS
RthJC
RthCS
Flat, greased surface
Weight
Mounting torque
-
30
-
g
Torque per diode
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
Case style
SOT-227
300
1
175 °C
275
250
200
175
TJ = 175 °C
TJ = 150 °C
0.1
TJ = 125 °C
TJ = 25 °C
0.01
150 °C
125 °C
IRM (mA)
225
IF (A)
°C/W
150
125
0.001
100
25 °C
75
0.0001
50
25
0
0.00001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100
200
300
400
500
600
VFM (V)
VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current
Revision: 19-May-2022
Document Number: 96941
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-U5FH150FA60
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Vishay Semiconductors
180
IF = 75 A, VR = 400 V
160
160
140
120
140
100
trr (ns)
Allowable Case Temperature (°C)
180
80
125 °C
120
100
60
40
80
25 °C
20
60
0
0
20
40
60
80
100
120
140
160
0
200
400
600
800 1000 1200 1400 1600
dIF/dt (A/µs)
IF - Continuous Forward Current (A)
Fig. 6 - Diode Reverse Recovery Time vs. dIFdt
Fig. 3 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Diode)
200
50
RMS limit
160
120
100
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
60
40
20
30
20
25 °C
10
IF = 75 A, VR = 400 V
0
0
0
20
40
60
80
100
0
120
200
400
600
800 1000 1200 1400 1600
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Average Power Loss vs. Average Forward Current
Fig. 7 - Diode Reverse Recovery Current vs. dIFdt
1000
3
IF = 75 A, VR = 400 V
2.5
125 °C
2
Qrr (µC)
CT - Junction Capacitance (pF)
125 °C
40
140
Irr (A)
Average Power Loss (W)
180
100
1.5
1
0.5
25 °C
0
10
1
10
100
1000
0
200
400
600
800 1000 1200 1400 1600
VR - Reverse Voltage (V)
dIF/dt (A/µs)
Fig. 5 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 8 - Diode Reverse Recovery Charge vs. dIFdt
Revision: 19-May-2022
Document Number: 96941
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-U5FH150FA60
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Junction to Case
ORDERING INFORMATION TABLE
Device code
VS-
U5F
H
150
F
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
U5F = Gen 5 FRED Pt® family
3
-
H = Ultrafast FRED Pt® diode
4
-
Current rating per module (150 = 150 A)
5
-
F = circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 19-May-2022
Document Number: 96941
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
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