VS-VSKJS203/100
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Vishay Semiconductors
AAP Gen 7 (TO-240AA)
Power Modules Schottky Rectifier, 200 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Designed and qualified for industrial level
AAP Gen 7 (TO-240AA)
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
IF(AV)
200 A
• High surge capability
VR
100 V
• Easy mounting on heatsink
Package
AAP Gen 7 (TO-240AA)
Circuit configuration
Two diodes common anode
MECHANICAL DESCRIPTION
The AAP Gen 7, new generation of ADD-A-PAK module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION / APPLICATIONS
The VS-VSKJS203.. Schottky rectifier common anode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
100 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
200
A
100
V
12 800
A
0.87
V
-55 to +175
°C
VS-VSKJS203/100
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Revision: 03-May-17
Document Number: 93226
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS203/100
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per module
per leg
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 121 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated VRRM applied
VALUES
UNITS
200
100
12 800
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
15
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
A
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10 ms sine or 6 ms rect. pulse
Repetitive avalanche current
1700
ELECTRICAL SPECIFICATIONS
PARAMETER
100 A
Maximum forward voltage drop
VFM
200 A
100 A
200 A
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
Typical series inductance
LS
Maximum voltage rate of change
dV/dt
Maximum RMS insulation voltage
VINS
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
50 Hz
0.99
1.34
0.87
V
1.09
3
65
2750
mA
pF
7.0
nH
10 000
V/μs
3000 (1 min)
3600 (1 s)
V
VALUES
UNITS
-55 to +175
°C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Typical thermal resistance,
case to heatsink per module
RthCS
DC operation
°C/W
0.1
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
0.52
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC®
75
g
2.7
oz.
4
Nm
3
TO-240AA compatible
Revision: 03-May-17
Document Number: 93226
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS203/100
Vishay Semiconductors
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 175 °C
TJ = 25 °C
100
TJ = 125 °C
10
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
VFM - Forward Voltage Drop (V)
93226_01
10
20
40
50
60
70
80
90 100
VR - Reverse Voltage (V)
93226_02
Fig. 1 - Maximum Forward Voltage Drop Characteristics
30
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
10 20 30 40 50 60 70 80 90 100 110
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
93226_03
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.1
0.01
0.00001
93226_04
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 03-May-17
Document Number: 93226
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS203/100
Vishay Semiconductors
120
180
160
140
120
DC
100
80
60
Square wave (D = 0.50)
Rated VR applied
40
20
100
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
80
RMS limit
60
40
DC
20
See note (1)
0
0
0
93226_05
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
50
100
150
200
250
0
300
IF(AV) - Average Forward Current (A)
93226_06
IFSM - Non-Repetitive Surge Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
40
60
80
100
120
140
160
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
100 000
10 000
1000
100
10
93226_07
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 03-May-17
Document Number: 93226
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS203/100
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS KJ
1
2
S
20
3
3
4
5
/
100
6
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
3
-
S = Schottky diode
4
-
Average current rating (20 = 200 A)
5
-
Product silicon identification
6
-
Voltage rating (100 = 100 V)
KJ = ADD-A-PAK - 2 diodes common anode
CIRCUIT CONFIGURATION
(1)
-
(2)
+
(3)
+
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 03-May-17
Document Number: 93226
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
24 ± 0.5
(1 ± 0.020)
6.7 ± 0.3 (0.26 ± 0.012)
Viti M5 x 0.8
Screws M5 x 0.8
Document Number: 95369
Revision: 11-Nov-08
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
15 ± 0.5 (0.59 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 01-Jan-2023
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Document Number: 91000