VS-VSKS500/08PbF
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Vishay Semiconductors
Single Thyristor
(MAGN-A-PAK Block Power Module), 500 A
FEATURES
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-PAK Block
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
IT(AV)
500 A
Type
Modules - thyristor, standard
Package
MAGN-A-PAK block
• Battery chargers
• Welders
• Power converters
• Alternators
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VDRM/VRRM
IT(AV)
I2t
V
500
50 Hz
14 000
60 Hz
14 658
50 Hz
980
60 Hz
894
785
I2t
TJ
UNITS
800
76 °C
IT(RMS)
ITSM
VALUES
A
kA2s
9800
kA2s
-40 to +130
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
mA
800
900
80
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSKS500/08PbF
Revision: 26-Jul-2018
Document Number: 93160
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VS-VSKS500/08PbF
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Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
VALUES
UNITS
500
A
76
°C
785
No voltage
reapplied
16 646
100 % VRRM
reapplied
14 000
No voltage
reapplied
17 430
Sine half wave, initial
TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
14 658
1385
1265
894
kA2s
894
1385
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
0.6839
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ maximum
0.7598
Low level value on-state
slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
0.393
High level value on-state
slope resistance
rt2
(I > x IT(AV)), TJ maximum
0.389
Maximum on-state voltage drop
A
kA2s
V
m
VTM
TJ = 25 °C, Ipk = 500 A
1.1
V
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs,
Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A
Typical turn-off time
tq
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V,
dV/dt = 20 V/μs, Gate 0 V 100 , tp = 500 μs
200
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1.3
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 67 % rated VDRM
500
V/μs
Maximum peak reverse and off-state
leakage current
IDRM,
IRRM
TJ = TJ maximum, rated VDRM/VRRM applied
80
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminal shorted, t = 1 s
3000
V
Revision: 26-Jul-2018
Document Number: 93160
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum required DC gate voltage to trigger
VGT
Maximum required DC gate current to trigger
IGT
Maximum holding current
IH
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
DC gate voltage not to trigger
VGD
DC gate current not to trigger
IGD
Maximum non-repetitive rate of rise of
turned-on current
dI/dt
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, tp 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
A
3
V
TJ = 25 °C
Anode supply: 12 V resistive load
200
W
mA
600
20
TJ = TJ maximum, tp 5 ms
V
5.0
TJ = TJ maximum
Maximum gate current/voltage not to trigger
is the maximum value which will not trigger
any unit with rated VDRM anode to cathode
applied
0.30
V
10
mA
1000
A/μs
VALUES
UNITS
-40 to +130
°C
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 %
VDRM, It = 400 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.08
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
0.035
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 h to allow for the spread of the
compound. Lubricated threads.
6 to 8
Mounting
torque
± 10 %
K/W
MAGN-A-PAK block to heatsink
busbar to MAGN-A-PAK block
12 to 15
Approximate weight
Case style
Nm
430
g
15.3
oz.
MAGN-A-PAK block
R CONDUCTION PER JUNCTION
VS-VSKS500
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.013
0.0148
0.018
0.026
0.044
0.082
0.0142
0.019
0.027
0.044
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 93160
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Vishay Semiconductors
600
120
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
Ø
Conduction angle
100
80
60°
60
180°
30°
90°
40
120°
20
500
400
300
100
200
300
400
500
100
Per leg, TJ = 125 °C
0
600
Average On-State Current (A)
93160_01
100
200
300
400
500
Average On-State Current (A)
93160_04
Fig. 1 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
15 500
140
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 130 °C
No voltage reapplied
Voltage reapplied
14 500
120
100
80
30°
60
60°
40
180°
90°
Ø
Conduction period
20
Peak Half Sine Wave
On-State Current (A)
Maximum Allowable Case
Temperature (°C)
Ø
Conduction period
0
0
13 500
12 500
11 500
10 500
9500
8500
120°
Per leg,
TJ = 125 °C
7500
6500
0
0
100
200
300
400
1
500
Average On-State Current (A)
93160_02
600
15 500
400
RMS limit
300
200
Ø
100
Peak Half Sine Wave
On-State Current (A)
17 500
180°
120°
90°
60°
30°
13 500
200
300
400
500
5500
0.01
600
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
9500
7500
0
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 130 °C
No voltage reapplied
Voltage reapplied
11 500
Conduction angle
0
100
Fig. 5 - Maximum Non-Repetitive Surge Current
700
500
10
Number of Equal Amplitude Half
Cycle Current Pulses (N)
93160_05
Fig. 2 - Current Rating Characteristics
Maximum Average On-State
Power Loss (W)
RMS limit
200
0
93160_03
180°
120°
90°
60°
30°
93160_06
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 93160
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Instantaneous On-State Current (A)
Vishay Semiconductors
10 000
1000
TJ = 130 °C
100
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On-State Voltage (V)
93160_07
Fig. 7 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (K/W)
0.1
0.01
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
93160_08
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
VSK
S
500
1
2
3
4
/
08
PbF
5
6
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Circuit configuration (S = single SCR)
4
-
Current rating (500 = 500 A)
5
-
Voltage rating (08 = 800 V)
6
-
PbF = lead (Pb)-free
Revision: 26-Jul-2018
Document Number: 93160
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKS500/08PbF
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Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
2 (+)
1
Single SCR
2
3 (-)
7
6
4
5
K1 G1
K1 G1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95379
Revision: 26-Jul-2018
Document Number: 93160
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Outline Dimensions
Vishay Semiconductors
Thyristor MAP Block
DIMENSIONS in millimeters
3.0
Fast-on tab 2.8 x 0.8
20
+ 1.5
52 - 0.0
33 ± 0.5
9.5 ± 0.5
102.8 ± 0.3
Ø
6.
3
36.8 ± 0.15
44.7 ± 0.15
M1
K
A
25
7
6
K
G
4
38 ± 0.3
5
5
51.5 ± 0.3
0
80 ± 0.3
93.5 ± 0.3
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
Document Number: 95379
Revision: 02-Dec-09
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Document Number: 91000