VSKY20401608
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Vishay Semiconductors
Schottky Rectifier Surface-Mount FlipKY® Gen 2
FEATURES
• Schottky diode for high-speed switching
• Very low dimensions - 1.6 mm x 0.8 mm x 0.31 mm
• 2.0 A forward current
XX
X
• Low forward voltage drop (typ. 510 mV at 2.0 A)
M
M
Y
Y
• Low reverse current (< 18 μA at 10 V)
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
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please
Footprints
PARTS TABLE
PART
ORDERING CODE
CIRCUIT
CONFIGURATION
PACKAGE
NAME
Single
CLP1608-2L
VSKY20401608 VSKY20401608-G4-08
TYPE
TAPED UNITS PER REEL
WEIGHT
(8 mm TAPE ON 7" REEL)
CODE
104
0.840 mg
5000
MINIMUM
ORDER
QUANTITY
5000
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Peak forward surge current
Power dissipation
VALUE
UNIT
VRRM
40
V
VF = 0.5 V, Rth = 100 K/W
IF(AV)
2
A
8.3 ms single half sine-wave
IFSM
28
A
On FR-4 board 50 mm x 50 mm
35 μm Cu single sided
Ptot
1000
mW
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
SYMBOL
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
On FR-4 board 50 mm x 50 mm
35 μm Cu single sided
RthJA
100
K/W
Tj
125
°C
Tstg
-65 to +150
°C
Maximum operating junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Leakage current
Forward voltage
Diode capacitance
TEST CONDITION
SYMBOL
MAX.
UNIT
VR = 10 V
IR
TYP.
18
μA
VR = 40 V
IR
150
μA
IF = 100 mA
VF
0.300
0.350
V
IF = 1 A
VF
0.425
0.470
V
IF = 2 A
VF
0.510
0.580
VR = 0 V, f = 1 MHz
CD
340
V
pF
Rev. 1.4, 27-Feb-2019
Document Number: 85892
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKY20401608
www.vishay.com
Vishay Semiconductors
RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted)
IF - Forward Current (mA)
1000
TJ = 125 °C
100
100 °C
25 °C
10
50 °C
1
75 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
VF - Forward Voltage (V)
22792
Fig. 1 - Typical Forward Current vs.
Forward Voltage at Various Temperatures
IR - Reverse Current (μA)
100 000
TJ = 125 °C
10 000
100 °C
1000
75 °C
100
50 °C
25 °C
10
1
0
5
10
15
20
25
30
35
40
VR - Reverse Voltage (V)
22793
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage at Various Temperatures
CD - Typical Capacitance (pF)
400
350
300
250
200
150
100
50
0
0
22794
5
10
15
20
25
30
35
40
VR - Reverse Voltage (V)
Fig. 3 - Typical Capacitance vs. Reverse Voltage
Rev. 1.4, 27-Feb-2019
Document Number: 85892
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKY20401608
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: CLP1608-2L
L/2
b
L3
A
L2
mm
min.
A1
0.25
max. 0.31
b
0.58
0.02
D
E
1.6 nom. 0.8 nom.
0.65
L
L2
L3
1.42
0.85
0.25
1.52
0.93
0.33
E
A1
A
L
Document no.:S8-V-3906.04-033 (4)
K
Created - Date: 10. Feb. 2014
Rev. 1 : Date: 27. March 2015
D
22739
Footprint and soldering recommendation:
please see Application Note: www.vishay.com/doc?85917
Rev. 1.4, 27-Feb-2019
Document Number: 85892
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000