VSSAF3L45HM3_A/I

VSSAF3L45 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series • Very low profile - typical height of 0.95 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop Top View Bottom View SlimSMA (DO-221AC) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. 3D Models PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 45 V IFSM 80 A IR at VR = 45 V (125 °C) 5 mA VF at IF = 3.0 A (125 °C) 0.37 V TJ max. 150 °C Package SlimSMA (DO-221AC) Circuit configuration Single MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward rectified current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VSSAF3L45 UNIT 3L45 VRRM 45 V IF(AV) (1) 3.0 A IFSM 80 A TJ (2), TSTG -40 to +150 °C Note (1) Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB (2) The heat generated must be less than thermal conductivity from junction to ambient: dP /DT < 1/R D J θJA Revision: 17-Dec-2021 Document Number: 89935 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF3L45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A TA = 25 °C IF = 3.0 A Instantaneous forward voltage SYMBOL VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A TA = 25 °C Reverse current VR = 45 V Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C TYP. MAX. 0.41 - 0.46 0.54 0.31 - 0.37 0.46 - 450 μA 5 25 mA 425 - pF IR (2) CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL VSSAF3L45 RθJA (1)(2) 115 RθJM (2)(3) 12 UNIT °C/W Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R θJA - junction to ambient (2) The heat generated must be less than thermal conductivity from junction to ambient: dP /DT < 1/R D J θJA (3) Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB, R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF3L45-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel VSSAF3L45-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel VSSAF3L45HM3_A/H (1) 0.032 H 3500 7" diameter plastic tape and reel VSSAF3L45HM3_A/I (1) 0.032 I 14 000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) 3.6 1.6 RthJM = 12 °C/W 3.2 2.8 RthJA = 115 °C/W 2.4 2.0 1.6 1.2 0.8 0.6 T 0.4 0.0 75 100 125 150 Mount Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve D = 1.0 0.8 0 50 D = 0.1 1.0 0.2 25 D = 0.8 D = 0.3 D = 0.2 1.2 0.4 0 D = 0.5 1.4 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) D = tp/T 0 0.4 0.8 1.2 1.6 2 2.4 2.8 tp 3.2 3.6 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 17-Dec-2021 Document Number: 89935 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF3L45 www.vishay.com Vishay General Semiconductor TJ = 150 °C 10 1000 1st line 2nd line 2nd line Instantaneous Forward Current (A) 10000 TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 0.1 10 0 Transient Thermal Impedance (°C/W) Axis Title 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1000 Junction to Ambient 100 10 1 0.01 0.1 10 100 t - Pulse Duration (s) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance 100 120 TA = 150 °C Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) 1 10 TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 Epoxy printed circuit board FR4 copper thickness = 70 µm 100 80 60 40 20 S (cm2) 0 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) 0 2 4 6 8 10 Copper Pad Areas (cm2) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 17-Dec-2021 Document Number: 89935 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF3L45 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimSMA (DO-221AC) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 17-Dec-2021 Document Number: 89935 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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