VSSAF56HM3_A/H

VSSAF56 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS® eSMP® Series • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop Top View Bottom View SlimSMA (DO-221AC) Cathode Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 60 V IFSM 100 A VF at IF = 5.0 A 0.48 V TJ max. 150 °C Package SlimSMA (DO-221AC) Circuit configuration Single Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VSSAF56 UNIT V56 VRRM 60 V IF (1) 5.0 IF (2) 2.6 IFSM 100 A TJ, TSTG -40 to +150 °C A Notes (1) Mounted on 30 mm x 30 mm pad areas, 2 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 04-May-2018 Document Number: 87733 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF56 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A IF = 5.0 A Instantaneous forward voltage IF = 2.5 A IF = 5.0 A Reverse current VR = 60 V Typical junction capacitance 4.0 V, 1 MHz SYMBOL TYP. MAX. 0.47 - 0.54 0.62 0.38 - 0.48 0.56 - 0.4 4.5 15 540 - TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL VSSAF56 RJA (1) 115 RJM (2) 12 UNIT °C/W Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R JA - junction to ambient (2) Mounted on 30 mm x 30 mm pad areas, 2 oz. FR4 PCB; R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF56-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel VSSAF56-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel VSSAF56HM3_A/H (1) 0.032 H 3500 7" diameter plastic tape and reel VSSAF56HM3_A/I (1) 0.032 I 14 000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) 6 4.0 RthJM = 12 °C/W 5 4 3 D = 0.8 3.5 Average Power Loss (W) Average Forward Rectified Current (A)  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) RthJA = 115 °C/W 2 1 D = 0.5 3.0 D = 0.2 2.5 D = 0.3 D = 0.1 2.0 D = 1.0 1.5 T 1.0 0.5 D = tp/T tp 0.0 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Currernt Derating Curve 0 1 2 3 4 5 6 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 04-May-2018 Document Number: 87733 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF56 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance 100 140 TA = 150 °C 10 Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 1000 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 120 100 80 60 40 20 S (cm2) 0 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 0 1 2 3 4 5 6 7 8 9 10 Copper Pad Areas (cm2) Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 04-May-2018 Document Number: 87733 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSAF56 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimSMA (DO-221AC) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 04-May-2018 Document Number: 87733 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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