2SD1047

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors 2SD1047 / 2SB817 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 160 140 6.0 12 1.2 100 150 -55~150 Unit V V V A A W o C C Storage Temperature o TO-3PN ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Collector Output Capacitance Symbol Test Conditions VCB=140V, IE=0 VEB=6V, IC=0 IC=30mA, IB=0 VCE=5.0V, IC=1.0A VCE=5.0V, IC=6.0A Min. — — 140 60 20 — — — Typ. — — — — — — — 15 300 Max. 10 10 — 200 — 2.5 1.5 — V V MHz pF Unit uA uA V O ICEO IEBO VCEO hFE1 hFE2 VBE fT COB VCE(sat) IC=5.0A,IB=0.5A VCE=5.0V,IC=1.0A VCE=5.0V,IC=1.0A VCB=-10V, IE=0, f=1MHz Note : hfe1 Classification D: 60~120, E: 100~200