BC556

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR (PNP) TO-92 FEATURES High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BC556 BC557 BC558 Value -80 -50 -30 -65 -45 -30 -5 -100 625 150 -55-150 Unit V 1. COLLECTOR 2. BASE 3. EMITTER VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Symbol VCBO Test conditions Min -80 -50 -30 -65 -45 -30 -5 -0.1 Typ Max Unit V IC= -100μA, IE=0 Collector-emitter breakdown voltage VCEO VEBO ICBO IC= -2mA , IB=0 IE= -100μA, IC=0 VCB=- 70 V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0 VEB= -5 V, IC=0 V V μA Emitter-base breakdown voltage Collector cut-off current BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B/BC557B/BC558B BC557C Collector cut-off current ICEO -0.1 μA Emitter cut-off current IEBO -0.1 120 120 120 120 180 420 800 800 800 220 460 800 -0.65 -1 150 μA DC current gain hFE VCE=-5V, IC= -2mA Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) fT IC=-100mA, IB= -5mA IC= -100mA, IB=-5mA VCE= -5V, IC= -10mA V V MHz Transition frequency f = 100MHz A,May,2011